On the Structure of the Helmholtz Layer and its Implications on Electrode Kinetics

Concepts and selected experiments on the structure of the Helmholtz double layer at the metal- and semiconductor - electrolyte phase boundary are reviewed. The widely used microcapacitor approach of the double layer and its limitations are assessed. Observations on the influence of the electrode potential on the energetic position of surface states at the Ag-electrolyte contact are compared to the predictions of classical charge transfer models that are based on transition state theory where adiabatic tunneling is assumed. Distance tunneling spectroscopy on Au(111) surfaces shows pronounced variations in tunneling barrier heights that are connected to the inner structure of the Helmholtz layer and implications on electrode kinetics are presented. At the semiconductor-electrolyte contact, the influence of the electrode potential on a charge injecting species that results in photocurrent doubling is reviewed for low- and higher doped Si(111) electrodes, showing that the complex that injects electrons into the conduction band is located outside the semiconductor surface. The observations are correlated with the search for low overpotential earth abundant electrocatalysts for solar fuel generation of solar fuels

Oscillations at the Si/electrolyte contact: Relation to Quantum Mechanics

The basic process at the surface of the Si electrode is characterized by a cyclic oxidation of a thin silicon layer and the subsequent removal of the oxide by etching. Here, the oxide thickness evolves not uniformly due to cracks and nanopores. The mathematical model used to describe the phenomenon is based on a sequence of time dependent (oxide thickness) oscillator density functions that describes the passing of the (infinitesimal) oscillators through their minimum at each cycle. Two consecutive oscillator density functions are connected by a second order linear integral equation representing a Markov process. The kernel of the integral equation is a normalized Greens Function and represents the probability distribution for the periods of the oscillators during a cycle. Both, the oscillator density function and the two-dimensional probability density for the periods of the oscillators, define a random walk. A relation between the oscillator density functions and solutions of the Fokker-Planck equation can be constructed. This allows a connection of the oscillations, originally considered only for the description of a photo-electrochemical observation, to the Schrodinger equation. In addition, if the trajectory of a virtual particle, located at the silicon oxide electrode surface, is considered during one oscillatory cycle, then it can be shown that the displacement of the particle measured at the electrode surface performs a Brownian motion

Photoelectrochemical Conditioning of MOVPE p-InP Films for Light-Induced Hydrogen Evolution: Chemical, Electronic and Optical Properties

Homoepitaxial p-InP(100) thin films prepared by MOVPE (metallorganic vapor phase epitaxy) were transformed into an InP/oxide-phosphate/Rh heterostructure by photoelectrochemical conditioning. Surface sensitive synchrotron radiation photoelectron spectroscopy indicates the formation of a mixed oxide constituted by In(PO_3)_3, InPO_4 and In_(2)O_3 as nominal components during photo-electrochemical activation. The operation of these films as hydrogen evolving photocathode proved a light-to-chemical energy conversion efficiency of 14.5%. Surface activation arises from a shift of the semiconductor electron affinity by 0.44 eV by formation of In-Cl interfacial dipoles with a density of about 10^(12) cm^(−2). Predominant local In2O3-like structures in the oxide introduce resonance states near the semiconductor conduction band edge imparting electron conductivity to the phosphate matrix. Surface reflectance investigations indicate an enhanced light-coupling in the layered architecture

Core-Level X-Ray Photoemission Satellites in Ruthenates: A New Mechanism Revealing the Mott Transition

Ru 3d core-level x-ray photoemission spectra of various ruthenates are examined. They show in general two-peak structures, which can be assigned as the screened and unscreened peaks. The screened peak is absent in a Mott insulator, but develops into a main peak in the metallic regime. This spectral behavior is well explained by the dynamical mean-field theory calculation for the single-band Hubbard model with on-site core-hole potential using the exact diagonalization method. The new mechanism of the core-level photoemission satellite can be utilized to reveal the Mott transition phenomenon in various strongly correlated electron systems, especially in nano-scale devices and phase-separated materials.Comment: 4 pages, 5 figures, submitted to PR

Sustained Water Oxidation by Direct Electrosynthesis of Ultrathin Organic Protection Films on Silicon

Artificial photosynthesis allows exceeding the efficiency and stability limits of natural photosynthesis. Based on the use of semiconducting absorbers, high efficiency in water photolysis has been achieved in various photoelectrode configurations. However, integrated systems are limited in their stability, and more stable half-cell electrodes use protection films prepared by laborious methods. Herein, the facile low-temperature preparation of ultrathin organic protection coatings is demonstrated. The formation is based on the catalytic properties of water oxidation catalysts toward alcohol-polymerization reactions, which results in the formation of hitherto unknown protection layers on silicon. The interfacial layers are generated via iodine-mediated electro-reductive polymerization of ethanol, concomitantly forming during electrophoretic transport of RuO_2 onto silicon supports. Reaction chemistry analyses show that the RuO_2-induced catalysis introduces E2-elimination reactions which result in a carbon sp^3 –sp^2 transformation of the film. For the two modes of photoelectrochemical operation, the photovoltaic and the photoelectrocatalytic mode, 20 and 15 mA cm^(−2) photocurrent densities, respectively, are obtained with unaltered output for 8 and 24 h. The interfacial layer enables Si photovoltages of 500 mV, demonstrating extraordinary electronic interface quality. Since only hydrogen termination of the surface is a prerequisite for growth of the organic protection layer, the method is applicable to a wide range of semiconductors

Density of Superfluid Helium Droplets

The classical integral cross sections of large superfluid 4He_N droplets and the number of atoms in the droplets (N=10^3-10^4) have been measured in molecular beam scattering experiments. These measurements are found to be in good agreement with the cross sections predicted from density functional calculations of the radial density distributions with a 10-90 % surface thickness of 5.7\AA. By using a simple model for the density profile of the droplets a thickness of about 6-8\AA is extracted directly from the data.Comment: 27 pages, REVTeX, 5 postscript figure

Absence of system xc⁻ on immune cells invading the central nervous system alleviates experimental autoimmune encephalitis

Background: Multiple sclerosis (MS) is an autoimmune demyelinating disease that affects the central nervous system (CNS), leading to neurodegeneration and chronic disability. Accumulating evidence points to a key role for neuroinflammation, oxidative stress, and excitotoxicity in this degenerative process. System x(c)- or the cystine/glutamate antiporter could tie these pathological mechanisms together: its activity is enhanced by reactive oxygen species and inflammatory stimuli, and its enhancement might lead to the release of toxic amounts of glutamate, thereby triggering excitotoxicity and neurodegeneration. Methods: Semi-quantitative Western blotting served to study protein expression of xCT, the specific subunit of system x(c)-, as well as of regulators of xCT transcription, in the normal appearing white matter (NAWM) of MS patients and in the CNS and spleen of mice exposed to experimental autoimmune encephalomyelitis (EAE), an accepted mouse model of MS. We next compared the clinical course of the EAE disease, the extent of demyelination, the infiltration of immune cells and microglial activation in xCT-knockout (xCT(-/-)) mice and irradiated mice reconstituted in xCT(-/-) bone marrow (BM), to their proper wild type (xCT(+/+)) controls. Results: xCT protein expression levels were upregulated in the NAWM of MS patients and in the brain, spinal cord, and spleen of EAE mice. The pathways involved in this upregulation in NAWM of MS patients remain unresolved. Compared to xCT(+/+) mice, xCT(-/-) mice were equally susceptible to EAE, whereas mice transplanted with xCT(-/-) BM, and as such only exhibiting loss of xCT in their immune cells, were less susceptible to EAE. In none of the above-described conditions, demyelination, microglial activation, or infiltration of immune cells were affected. Conclusions: Our findings demonstrate enhancement of xCT protein expression in MS pathology and suggest that system x(c)- on immune cells invading the CNS participates to EAE. Since a total loss of system x(c)- had no net beneficial effects, these results have important implications for targeting system x(c)- for treatment of MS

An Electrochemical, Microtopographical and Ambient Pressure X-Ray Photoelectron Spectroscopic Investigation of Si/TiO_2/Ni/Electrolyte Interfaces

The electrical and spectroscopic properties of the TiO_2/Ni protection layer system, which enables stabilization of otherwise corroding photoanodes, have been investigated in contact with electrolyte solutions by scanning-probe microscopy, electrochemistry and in-situ ambient pressure X-ray photoelectron spectroscopy (AP-XPS). Specifically, the energy-band relations of the p+-Si/ALD-TiO_2/Ni interface have been determined for a selected range of Ni thicknesses. AP-XPS measurements using tender X-rays were performed in a three-electrode electrochemical arrangement under potentiostatic control to obtain information from the semiconductor near-surface region, the electrochemical double layer (ECDL) and the electrolyte beyond the ECDL. The degree of conductivity depended on the chemical state of the Ni on the TiO2surface. At low loadings of Ni, the Ni was present primarily as an oxide layer and the samples were not conductive, although the TiO_2 XPS core levels nonetheless displayed behavior indicative of a metal-electrolyte junction. In contrast, as the Ni thickness increased, the Ni phase was primarily metallic and the electrochemical behavior became highly conductive, with the AP-XPS data indicative of a metal-electrolyte junction. Electrochemical and microtopographical methods have been employed to better define the nature of the TiO_2/Ni electrodes and to contextualize the AP-XPS results

Direct observation of the energetics at a semiconductor/liquid junction by operando X-ray photoelectron spectroscopy

Photoelectrochemical (PEC) cells based on semiconductor/liquid interfaces provide a method of converting solar energy to electricity or fuels. Currently, the understanding of semiconductor/liquid interfaces is inferred from experiments and models. Operando ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) has been used herein to directly characterize the semiconductor/liquid junction at room temperature under real-time electrochemical control. X-ray synchrotron radiation in conjunction with AP-XPS has enabled simultaneous monitoring of the solid surface, the solid/electrolyte interface, and the bulk electrolyte of a PEC cell as a function of the applied potential, U. The observed shifts in binding energy with respect to the applied potential have directly revealed ohmic and rectifying junction behavior on metallized and semiconducting samples, respectively. Additionally, the non-linear response of the core level binding energies to changes in the applied electrode potential has revealed the influence of defect-derived electronic states on the Galvani potential across the complete cell

Low-Energy Universality in Atomic and Nuclear Physics

An effective field theory developed for systems interacting through short-range interactions can be applied to systems of cold atoms with a large scattering length and to nucleons at low energies. It is therefore the ideal tool to analyze the universal properties associated with the Efimov effect in three- and four-body systems. In this "progress report", we will discuss recent results obtained within this framework and report on progress regarding the inclusion of higher order corrections associated with the finite range of the underlying interaction.Comment: Commissioned article for Few-Body Systems, 47 pp, 16 fig