217 research outputs found

    Strain-induced energy band gap opening in two-dimensional bilayered silicon film

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    This work presents a theoretical study of the structural and electronic properties of bilayered silicon films under in-plane biaxial strain/stress using density functional theory. Atomic structures of the two-dimensional silicon films are optimized by using both the local-density approximation and generalized gradient approximation. In the absence of strain/stress, five buckled hexagonal honeycomb structures of the bilayered silicon film have been obtained as local energy minima and their structural stability has been verified. These structures present a Dirac-cone shaped energy band diagram with zero energy band gaps. Applying tensile biaxial strain leads to a reduction of the buckling height. Atomically flat structures with zero bucking height have been observed when the AA-stacking structures are under a critical biaxial strain. Increase of the strain between 10.7% ~ 15.4% results in a band-gap opening with a maximum energy band gap opening of ~168.0 meV obtained when 14.3% strain is applied. Energy band diagram, electron transmission efficiency, and the charge transport property are calculated.Comment: 18 pages, 5 figures, 1 tabl

    Dynamic Coupling of Piezoelectric Effects, Spontaneous Polarization, and Strain in Lattice-Mismatched Semiconductor Quantum-Well Heterostructures

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    A static and dynamic analysis of the combined and self-consistent influence of spontaneous polarization, piezoelectric effects, lattice mismatch, and strain effects is presented for a three-layer one-dimensional AlN/GaN wurtzite quantum-well structure with GaN as the central quantum-well layer . It is shown that, contrary to the assumption of Fonoberov and Balandin [J. Appl. Phys. 94, 7178 (2003); J. Vac. Sci. Technol. B 22, 2190 (2004)], even in cases with no current transport through the structure, the strain distributions are not well captured by minimization of the strain energy only and not, as is in principle required, the total free energy including electric and piezoelectric coupling and spontaneous polarization contributions. Furthermore, we have found that, when an ac signal is imposed through the structure, resonance frequencies exist where strain distributions are even more strongly affected by piezoelectric-coupling contributions depending on the amount of mechanical and electrical losses in the full material system

    Properties of Two-Dimensional Silicon grown on Graphene Substrate

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    The structure and electrical properties of a two-dimensional (2D) sheet of silicon on a graphene substrate are studied using first-principles calculations. A new corrugated rectangular structure of silicon is proposed to be the most energetically favorable structure. The shifting of the Fermi energy level indicates self-doping. Calculation of electron density shows a weak coupling between the silicon layer and graphene substrate. The 2D silicon sheet turns to be metallic and has a much higher value of transmission efficiency (TE) than the underlying graphene substrate.Comment: 5 Pages, 7 figure

    Dynamics of a nanowire superlattice in an ac electric field

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    With a one-band envelope function theory, we investigate the dynamics of a finite nanowire superlattice driven by an ac electric field by solving numerically the time-dependent Schroedinger equation. We find that for an ac electric field resonant with two energy levels located in two different minibands, the coherent dynamics in nanowire superlattices is much more complex as compared to the standard two-level description. Depending on the energy levels involved in the transitions, the coherent oscillations exhibit different patterns. A signature of barrier-well inversion phenomenon in nanowire superlattices is also obtained.Comment: 14 pages, 4 figure

    Recognition of Object Categories in Realistic Scenes

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    Classification of images maps the image content into a certain semantic term such as categories, domain, object. Image classification should be able automatically check the existence of certain object (e.g. car, animal, and scene) in the image content. This task is still challenging in computer vision since we have to deal with the realistic image. The objective of this works is to discover the image classification methods by mixturing the existing techniques with the aim of the best results in classification. In this work, we implemented sparse coding method with spatial pyramid matching to classify the images. Beside gray SIFT, four SIFT color descriptors were also used as a local descriptor. Linear Super Vector Machine (SVM) is conducted for training and testing the images. The result of this work has shown that color descriptors improve significantly the classification rate compared to gray SIFT

    Spin-phonon coupling in single Mn doped CdTe quantum dot

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    The spin dynamics of a single Mn atom in a laser driven CdTe quantum dot is addressed theoretically. Recent experimental results\cite{Le-Gall_PRL_2009,Goryca_PRL_2009,Le-Gall_PRB_2010}show that it is possible to induce Mn spin polarization by means of circularly polarized optical pumping. Pumping is made possible by the faster Mn spin relaxation in the presence of the exciton. Here we discuss different Mn spin relaxation mechanisms. First, Mn-phonon coupling, which is enhanced in the presence of the exciton. Second, phonon-induced hole spin relaxation combined with carrier-Mn spin flip coupling and photon emission results in Mn spin relaxation. We model the Mn spin dynamics under the influence of a pumping laser that injects excitons into the dot, taking into account exciton-Mn exchange and phonon induced spin relaxation of both Mn and holes. Our simulations account for the optically induced Mn spin pumping.Comment: 17 pages, 11 figures, submitted to PR

    Optoelectronics of Inverted Type-I CdS/CdSe Core/Crown Quantum Ring

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    Inverted type-I heterostructure core/crown quantum rings (QRs) are quantum-efficient luminophores, whose spectral characteristics are highly tunable. Here, we study the optoelectronic properties of type-I core/crown CdS/CdSe QRs in the zincblende phase - over contrasting lateral size and crown width. For this we inspect their strain profiles, transition energies, transition matrix elements, spatial charge densities, electronic bandstructure, band-mixing probabilities, optical gain spectra, maximum optical gains and differential optical gains. Our framework uses an effective-mass envelope function theory based on the 8-band kâ‹…\cdotp method employing the valence force field model for calculating the atomic strain distributions. The gain calculations are based on the density-matrix equation and take into consideration the excitonic effects with intraband scattering. Variations in the QR lateral size and relative widths of core and crown (ergo the composition) affect their energy levels, band-mixing probabilities, optical transition matrix elements, emission wavelengths/intensity, etc. The optical gain of QRs is also strongly dimension and composition dependent with further dependency on the injection carrier density causing band-filling effect. They also affect the maximum and differential gain at varying dimensions and compositions.Comment: Published in AIP Journal of Applied Physics (11 pages, 7 figures
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