Simultaneous electric and magnetic field induced nonvolatile memory

We investigate the electric field induced resistive switching effect and magnetic field induced fraction enlargement on a polycrystalline sample of a colossal magnetoresistive compound displaying intrinsic phase coexistence. Our data show that the electric effect (presumably related to the presence of inhomogeinities) is present in a broad temperature range(300 to 20 K), being observable even in a mostly homogeneous ferromagnetic state. In the temperature range in which low magnetic field determines the phase coexistence fraction, both effects, though related to different mechanisms, are found to determine multilevel nonvolatile memory capabilities simultaneously.Comment: Submited to AP

The steady state in noncollinear magnetic multilayers

There are at least two different putative steady state solutions for current across noncollinear magnetic multilayers; one has a discontinuity in the spin current at the interface the other is continuous. We compare the resistance of the two and find the solution with the continuous spin currents is lower. By using the entropic principle we can state that this solution is a better estimate of the resistance for a noncollinear magneticComment: 14 pages, 4 figures,Submitted to Physical Review

Lateral diffusive spin transport in layered structures

A one dimensional theory of lateral spin-polarized transport is derived from the two dimensional flow in the vertical cross section of a stack of ferromagnetic and paramagnetic layers. This takes into account the influence of the lead on the lateral current underneath, in contrast to the conventional 1D modeling by the collinear configuration of lead/channel/lead. Our theory is convenient and appropriate for the current in plane configuration of an all-metallic spintronics structure as well as for the planar structure of a semiconductor with ferromagnetic contacts. For both systems we predict the optimal contact width for maximal magnetoresistance and propose an electrical measurement of the spin diffusion length for a wide range of materials.Comment: 4 pages, 3 figure

Electronic inhomogeneity at magnetic domain walls in strongly-correlated systems

We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase diagram. This is done by means of a Landau-Ginzburg analysis of a metallic ferromagnetic system near an antiferromagnetic phase boundary. The strong spin gradients at a wall between domains of different spin orientation drive the formation of a new type of domain wall, where the central core is an insulating antiferromagnet, and connects two metallic ferromagnetic domains. We calculate the charge transport properties of this wall, and find that its resistance is large enough to account for recent experimental results in colossal magnetoresistance materials. The technological implications of this finding for switchable magnetic media are discussed.Comment: Version submitted to Physical Review Letters, except for minor revisions to reference

Development of technology for modeling of a 1/8-scale dynamic model of the shuttle Solid Rocket Booster (SRB)

A NASTRAN analysis of the solid rocket booster (SRB) substructure of the space shuttle 1/8-scale structural dynamics model. The NASTRAN finite element modeling capability was first used to formulate a model of a cylinder 10 in. radius by a 200 in. length to investigate the accuracy and adequacy of the proposed grid point spacing. Results were compared with a shell analysis and demonstrated relatively accurate results for NASTRAN for the lower modes, which were of primary interest. A finite element model of the full SRB was then formed using CQUAD2 plate elements containing membrane and bending stiffness and CBAR offset bar elements to represent the longerons and frames. Three layers of three-dimensional CHEXAI elements were used to model the propellant. This model, consisting of 4000 degrees of freedom (DOF) initially, was reduced to 176 DOF using Guyan reduction. The model was then submitted for complex Eigenvalue analysis. After experiencing considerable difficulty with attempts to run the complete model, it was split into two substructres. These were run separately and combined into a single 116 degree of freedom A set which was successfully run. Results are reported

Mechanism for bipolar resistive switching in transition metal oxides

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model.Comment: Accepted for publication in Physical Review B, 6 twocolumn pages, 5 figure

A natural orbital functional for the many-electron problem

The exchange-correlation energy in Kohn-Sham density functional theory is expressed as a functional of the electronic density and the Kohn-Sham orbitals. An alternative to Kohn-Sham theory is to express the energy as a functional of the reduced first-order density matrix or equivalently the natural orbitals. In the former approach the unknown part of the functional contains both a kinetic and a potential contribution whereas in the latter approach it contains only a potential energy and consequently has simpler scaling properties. We present an approximate, simple and parameter-free functional of the natural orbitals, based solely on scaling arguments and the near satisfaction of a sum rule. Our tests on atoms show that it yields on average more accurate energies and charge densities than the Hartree Fock method, the local density approximation and the generalized gradient approximations