0.12 µm GATE LENGTH In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

New In0.52Al0.48As/In0.53Ga0.47As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2 inch Silicon substrate with 0.12 µm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic transconductance up to 770 mS/mm. An extrinsic current cutoff frequency fT of 185 GHz is obtained. That result is the first reported for In0.52Al0.48As/In0.53Ga0.47As TS-HEMTs on Silicon substrate

A multiline InP-TRL kit for sub-mmWave characterization of InP-HEMT

International audienceWe investigate the development of on-wafer multiline Thru-Reflect-Line calibration kits to enable transistor characterization beyond 110 GHz. The final objective is to measure the S parameters of a HEMT having a very high cut-off frequency (up to THz range). A first kit design shows that the use of configurations suitable for the frequency bands used in the calibration will optimize the measurements of THz transistors

High frequency noise characterisation of graphene FET Device

International audienceRF GFET devices have been processed on SiC wafer using Al2O3 as a gate oxide. These devices have been characterised with DC, S parameter and high frequency noise measurement (NF50). The noise parameters have been extracted in order to evaluate the graphene material for RF applications. This GFET shows some potentialities for RF circuits with fT=11.5GHz and NFmin=2.4 dB at 3GHz

0.1um metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMTs on GaAs substrate

We report on the fabrication and characterization of 0.1 urn T-gate metamorphic InAlAs/InGaAs HEMTs on GaAs substrate with InAs mole fraction of 0.4. These devices present a good Schottky diode behavior, a drain current of 610mA/mm with an extrinsic transconductance of 680mS/mm. An intrinsic transconductance gm0 of 1150mS/mm and a current gain cutoff frequency fT of 195GHz are obtained. These good characteristics are similar to those obtained with lattice-matched HEMTs on InP substrate. Metamorphic HEMT is an attractive candidate for large scale and low cost MMIC production in the millimeter wave range

Preventing instantiation errors and loops for logic programs with multiple modes using block declarations

Delay declarations are provided in logic programming languages to allow for more exible control, as opposed to the left-to-right selection rule of Prolog. An atom in a query is selected for resolution only when its arguments are instantiated to a specied degree. This is essential to prevent run-time errors produced by built-in predicates (e.g.>/2), and to ensure termination

A new gate process for the realization of lattice - matched HEMT on InP for high yield MMICs

A new gate process for the realization of ultra short gate HEMT on InP is presented. In this technology, the top of the gate is deposited on a Si3N4 layer. This gate process leads to small footprints, mechanically strong devices and good yield. Using this gate technology, HEMT with high Ft were realized and characterized. The influence of the Si3N4 removing was also investigated