56 research outputs found
Direct Graphene Growth on Insulator
Fabrication of graphene devices is often hindered by incompatibility between
the silicon technology and the methods of graphene growth. Exfoliation from
graphite yields excellent films but is good mainly for research. Graphene grown
on metal has a technological potential but requires mechanical transfer. Growth
by SiC decomposition requires a temperature budget exceeding the technological
limits. These issues could be circumvented by growing graphene directly on
insulator, implying Van der Waals growth. During growth, the insulator acts as
a support defining the growth plane. In the device, it insulates graphene from
the Si substrate. We demonstrate planar growth of graphene on mica surface.
This was achieved by molecular beam deposition above 600{\deg}C. High
resolution Raman scans illustrate the effect of growth parameters and substrate
topography on the film perfection. Ab initio calculations suggest a growth
model. Data analysis highlights the competition between nucleation at surface
steps and flat surface. As a proof of concept, we show the evidence of electric
field effect in a transistor with a directly grown channel.Comment: 13 pages, 6 figure
Maximum illumination control system for photovoltaic panels orientation
The article describes the solar tracker for photovoltaic panels and energy systems based on such devices. The authors introduce the results of calculations of the solar tracker application effectiveness for solar energy systems and the results of the field testing in Tomsk
ΠΡΠ·ΡΠΊΠ°Π»ΡΠ½ΡΠΉ ΠΈΠ½ΡΠΎΡΠΌΠ°ΡΠΈΠΎΠ½Π½ΡΠΉ ΠΏΠΎΠΈΡΠΊ Ρ Π·Π°ΠΏΡΠΎΡΠΎΠΌ ΠΏΠΎ Π½Π°ΠΏΠ΅Π²Ρ
In this paper the problems of Query by Humming in Music Information Retrieval systems are analyzed. A statistical approach to the problem of retrieval is presented. The processes of segmentation as well as of the extraction of pitch and duration data are described. From the extracted data the characteristic vector is formed for each segment. The method of using the vectors in melodic search if proposed
Mars Colonization Problems
In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices (FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible
processes are applied. Few and monolayer graphene sheets are
characterized by scanning electron microscopy, atomic force
microscopy and Raman spectroscopy. The electrical properties of
monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene
pseudo-MOS structures are compared to those obtained from
double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs)
Π‘ΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΠΎΠ΅ ΡΠΎΡΡΠΎΡΠ½ΠΈΠ΅ ΠΈ ΠΏΠ΅ΡΡΠΏΠ΅ΠΊΡΠΈΠ²Ρ ΡΠ°Π·Π²ΠΈΡΠΈΡ ΠΠΠΠ’ Π’ΠΎΠΌΡΠΊΠΎΠΉ ΠΎΠ±Π»Π°ΡΡΠΈ
Π ΡΠ°Π±ΠΎΡΠ΅ Π΄Π°Π½Π° Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠ° ΡΠ΅ΡΠΈ ΠΎΡΠΎΠ±ΠΎ ΠΎΡ
ΡΠ°Π½ΡΠ΅ΠΌΡΡ
ΠΏΡΠΈΡΠΎΠ΄Π½ΡΡ
ΡΠ΅ΡΡΠΈΡΠΎΡΠΈΠΉ Π’ΠΎΠΌΡΠΊΠΎΠΉ ΠΎΠ±Π»Π°ΡΡΠΈ, Π΅Π΅ ΡΠΎΠ»ΠΈ Π² ΠΏΠΎΠ΄Π΄Π΅ΡΠΆΠ°Π½ΠΈΠΈ ΡΠΊΠΎΠ»ΠΎΠ³ΠΎ-Ρ
ΠΎΠ·ΡΠΉΡΡΠ²Π΅Π½Π½ΠΎΠ³ΠΎ Π±Π°Π»Π°Π½ΡΠ° ΠΎΠ±Π»Π°ΡΡΠΈ. ΠΠΏΡΠ΅Π΄Π΅Π»Π΅Π½Ρ ΡΡΠ°ΠΏΡ ΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠ΅ΡΠΈ ΠΠΠΠ’. ΠΠ°Π½ Π°Π½Π°Π»ΠΈΠ· Π³Π΅ΠΎΠ³ΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠ°Π·Π½ΠΎΠΎΠ±ΡΠ°Π·ΠΈΡ ΡΠ΅ΡΠΈ ΠΠΠΠ’ ΠΈ ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½Π½ΠΎΡΡΠΈ Π΅Π΅ Π² Π°Π΄ΠΌΠΈΠ½ΠΈΡΡΡΠ°ΡΠΈΠ²Π½ΡΡ
ΡΠ°ΠΉΠΎΠ½Π°Ρ
ΠΎΠ±Π»Π°ΡΡΠΈ. ΠΠΏΡΠ΅Π΄Π΅Π»Π΅Π½Π° ΡΠΎΠ»Ρ ΡΠ΅ΡΠΈ ΠΠΠΠ’ Π² ΡΠΎΡ
ΡΠ°Π½Π΅Π½ΠΈΠΈ ΡΠ΅Π΄ΠΊΠΈΡ
ΠΈ ΠΈΡΡΠ΅Π·Π°ΡΡΠΈΡ
Π²ΠΈΠ΄ΠΎΠ² ΡΠ°ΡΡΠ΅Π½ΠΈΠΉ ΠΈ ΠΆΠΈΠ²ΠΎΡΠ½ΡΡ
. Π Π°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π° ΠΈ ΡΠ΅Π°Π»ΠΈΠ·ΠΎΠ²Π°Π½Π° ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊΠ° ΠΊΠΎΠΌΠΏΠ»Π΅ΠΊΡΠ½ΠΎΠΉ ΠΎΡΠ΅Π½ΠΊΠΈ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΡΠ΅ΡΠΈ ΠΠΠΠ’. ΠΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Ρ ΠΏΡΡΠΈ Π΅Π΅ ΡΠ°Π·Π²ΠΈΡΠΈΡ ΠΈ ΠΎΠΏΡΠΈΠΌΠΈΠ·Π°ΡΠΈΠΈ.In work the characteristic of the network of specially protected natural territories of the Tomsk region, its role in maintaining ecological and economic balance of the region. The stages of forming a network of protected areas. The analysis of the geographic diversity of the PA network and its representation in the administrative districts of the region. Defined the role of the network of protected areas in the conservation of rare and endangered species of plants and animals. Developed and implemented a methodology of comprehensive evaluation of the effectiveness of the PA network. The proposed ways of its development and optimization
ΠΡΠΎΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠΈΡΡΠ΅ΠΌΡ ΡΠ»Π΅ΠΊΡΡΠΎΡΠ½Π°Π±ΠΆΠ΅Π½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΎΡΠ΅Ρ Π½ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ Π·Π°Π²ΠΎΠ΄Π°
Π ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ ΠΏΡΠΎΠΈΠ·Π²Π΅Π΄Π΅Π½ ΡΠ°ΡΡΠ΅Ρ Π½Π°Π³ΡΡΠ·ΠΎΠΊ ΡΡΠ°Π½ΡΡΠΎΡΠΌΠ°ΡΠΎΡΠ½ΠΎΠ³ΠΎ ΠΈ Π±Π°Π·Ρ Π² ΡΠ΅Π»ΠΎΠΌ Ρ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ΠΌ ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΠΌΠ΅ΡΠΎΠ΄ΠΎΠ², Π²ΡΠ±ΠΎΡ ΠΌΠ΅ΡΠΎΠ΄Π° ΡΠ°ΡΡΠ΅ΡΠ° ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΠΈΠ»ΡΡ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΈΡΡ
ΠΎΠ΄Π½ΡΡ
Π΄Π°Π½Π½ΡΡ
, Π° ΡΠ°ΠΊΠΆΠ΅ ΠΎΡΡΡΠ΅ΡΡΠ²Π»Π΅Π½ Π²ΡΠ±ΠΎΡ ΠΎΠ±ΠΎΡΡΠ΄ΠΎΠ²Π°Π½ΠΈΡ ΠΈ Π΅Π³ΠΎ ΠΏΡΠΎΠ²Π΅ΡΠΊΠ° ΠΏΡΠΈ ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΡΠ΅ΠΆΠΈΠΌΠ°Ρ
ΡΠ°Π±ΠΎΡΡ.
Π ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠ΅ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ Π±ΡΠ»Π° ΡΠΏΡΠΎΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½Π° ΠΊΠΎΠ½ΠΊΡΠ΅ΡΠ½Π°Ρ ΠΌΠΎΠ΄Π΅Π»Ρ ΡΠ»Π΅ΠΊΡΡΠΎΡΠ½Π°Π±ΠΆΠ΅Π½ΠΈΡ Π±Π°Π·Ρ ΠΏΠΎ ΠΎΠ±ΡΠ»ΡΠΆΠΈΠ²Π°Π½ΠΈΡ Π½Π΅ΡΡΠ΅Π³Π°Π·ΠΎΠ΄ΠΎΠ±ΡΠ²Π°ΡΡΠ΅Π³ΠΎ ΠΌΠ΅ΡΡΠΎΡΠΎΠΆΠ΄Π΅Π½ΠΈΡ, ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½Π° Π΅Π΅ ΡΠΊΠΎΠ½ΠΎΠΌΠΈΡΠ΅ΡΠΊΠ°Ρ ΡΠ΅Π»Π΅ΡΠΎΠΎΠ±ΡΠ°Π·Π½ΠΎΡΡΡ ΠΈ Π±Π΅Π·ΠΎΠΏΠ°ΡΠ½ΠΎΡΡΡ Π΄Π»Ρ ΠΎΠΊΡΡΠΆΠ°ΡΡΠ΅ΠΉ ΡΡΠ΅Π΄Ρ.In the process of studying the calculation of the load and base as a whole with the use of various methods, the choice of the calculation method on the basis of the initial data, and also the selection of equipment and its verification under various operating modes was carried out.
As a result of the research, a specific model of power supply for the oil and gas industry maintenance base, its economic feasibility and safety for the environment was designed
Π’Π΅Ρ Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΡΠ΅ΡΠ΅Π½ΠΈΡ Π΄Π»Ρ ΡΡΡΠΎΠΈΡΠ΅Π»ΡΡΡΠ²Π° ΡΠΊΡΠΏΠ»ΡΠ°ΡΠ°ΡΠΈΠΎΠ½Π½ΠΎΠΉ Π³ΠΎΡΠΈΠ·ΠΎΠ½ΡΠ°Π»ΡΠ½ΠΎΠΉ ΡΠΊΠ²Π°ΠΆΠΈΠ½Ρ Π³Π»ΡΠ±ΠΈΠ½ΠΎΠΉ 3100 ΠΌΠ΅ΡΡΠΎΠ² Π½Π° Π½Π΅ΡΡΡΠ½ΠΎΠΌ ΠΌΠ΅ΡΡΠΎΡΠΎΠΆΠ΄Π΅Π½ΠΈΠΈ Π’ΠΎΠΌΡΠΊΠΎΠΉ ΠΎΠ±Π»Π°ΡΡΠΈ
Π ΠΎΠ±ΡΠ΅ΠΉ ΠΈ Π³Π΅ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠΉ ΡΠ°ΡΡΠΈ Π·Π°Π΄Π°Π½Ρ ΡΡΡΠ°ΡΠΈΠ³ΡΠ°ΡΠΈΡΠ΅ΡΠΊΠ°Ρ ΠΈ Π»ΠΈΡΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠ°Ρ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠ° ΡΠ°Π·ΡΠ΅Π·Π°, ΡΠ²ΠΎΠΉΡΡΠ²Π° Π³ΠΎΡΠ½ΡΡ
ΠΏΠΎΡΠΎΠ΄, ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΡ Π΄Π°Π²Π»Π΅Π½ΠΈΡ ΠΈ ΡΠ΅ΠΌΠΏΠ΅ΡΠ°ΡΡΡΡ ΠΏΠΎ ΡΠ°Π·ΡΠ΅Π·Ρ ΡΠΊΠ²Π°ΠΆΠΈΠ½Ρ, Π½Π΅ΡΡΠ΅Π³Π°Π·ΠΎΠ²ΠΎΠ΄ΠΎΠ½ΠΎΡΠ½ΠΎΡΡΡ. Π ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠΉ ΡΠ°ΡΡΠΈ ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½Ρ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΡΠ΅ΡΠ΅Π½ΠΈΡ Π΄Π»Ρ ΡΡΡΠΎΠΈΡΠ΅Π»ΡΡΡΠ²Π° ΡΠΊΠ²Π°ΠΆΠΈΠ½Ρ. ΠΠΎΠ½ΡΡΡΡΠΊΡΠΈΡ ΡΠΊΠ²Π°ΠΆΠΈΠ½Ρ ΡΠΎΡΡΠΎΠΈΡ ΠΈΠ· Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ, ΠΊΠΎΠ½Π΄ΡΠΊΡΠΎΡΠ°, ΡΠΊΡΠΏΠ»ΡΠ°ΡΠ°ΡΠΈΠΎΠ½Π½ΠΎΠΉ ΠΊΠΎΠ»ΠΎΠ½Π½Ρ ΠΈ Ρ
Π²ΠΎΡΡΠΎΠ²ΠΈΠΊΠ°. ΠΠ»Ρ Π±ΡΡΠ΅Π½ΠΈΡ ΠΏΠΎΠ΄ Π½Π°ΠΏΡΠ°Π²Π»Π΅Π½ΠΈΡ Π²ΡΠ±ΡΠ°Π½ ΡΠΎΡΠΎΡΠ½ΡΠΉ ΡΠΏΠΎΡΠΎΠ±, Π΄Π»Ρ ΠΎΡΡΠ°Π»ΡΠ½ΡΡ
ΠΈΠ½ΡΠ΅ΡΠ²Π°Π»ΠΎΠ² Π²ΡΠ±ΠΈΡΠ°Π΅ΡΡΡ Π±ΡΡΠ΅Π½ΠΈΠ΅ Π²ΠΈΠ½ΡΠΎΠ²ΡΠΌ Π·Π°Π±ΠΎΠΉΠ½ΡΠΌ Π΄Π²ΠΈΠ³Π°ΡΠ΅Π»Π΅ΠΌ. ΠΠΎΠ»ΠΎΡΠ° ΠΏΠΎΠ΄ΠΎΠ±ΡΠ°Π½Ρ Π² Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡΠΈ ΠΎΡ ΡΠ²Π΅ΡΠ΄ΠΎΡΡΠΈ ΠΈ Π°Π±ΡΠ°Π·ΠΈΠ²Π½ΠΎΡΡΠΈ. Π‘ΠΏΠΎΡΠΎΠ± ΡΠ΅ΠΌΠ΅Π½ΡΠΈΡΠΎΠ²Π°Π½ΠΈΡ β ΠΏΡΡΠΌΠΎΠΉ ΠΎΠ΄Π½ΠΎΡΡΡΠΏΠ΅Π½ΡΠ°ΡΡΠΉ. Π ΡΠΏΠ΅ΡΠΈΠ°Π»ΡΠ½ΠΎΠΉ ΡΠ°ΡΡΠΈ ΠΎΠΏΠΈΡΠ°Π½Ρ ΠΎΡΠΎΠ±Π΅Π½Π½ΠΎΡΡΠΈ Π·Π°ΠΊΠ°Π½ΡΠΈΠ²Π°Π½ΠΈΡ ΡΠΊΠ²Π°ΠΆΠΈΠ½ Π² ΡΡΠ»ΠΎΠ²ΠΈΡΡ
Π°Π½ΠΎΠΌΠ°Π»ΡΠ½ΠΎ Π½ΠΈΠ·ΠΊΠΈΡ
ΠΏΠ»Π°ΡΡΠΎΠ²ΡΡ
Π΄Π°Π²Π»Π΅Π½ΠΈΠΉ.In the general and geological part, stratigraphic and lithological characteristics of the section, rock properties, changes in pressure and temperature along the borehole section, and oil and gas content are given. Technological solutions for the construction of the well are presented in the technological part. The well design consists of the direction, conductor, production string and shank. For drilling under directions, a rotary method is chosen, for the remaining intervals, drilling by a screw downhole motor is selected. Chisels are selected depending on hardness and abrasiveness. Cementing method - direct single-stage. A special section describes the features of completion of wells in conditions of abnormally low reservoir pressures
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