MoS2 Transistors Operating at Gigahertz Frequencies

The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulphide (MoS2) being the most studied representative of this family of materials. While diverse electronic elements, logic circuits and optoelectronic devices have been demonstrated using ultrathin MoS2, very little is known about their performance at high frequencies where commercial devices are expected to function. Here, we report on top-gated MoS2 transistors operating in the gigahertz range of frequencies. Our devices show cutoff frequencies reaching 6 GHz. The presence of a band gap also gives rise to current saturation, allowing power and voltage gain, all in the gigahertz range. This shows that MoS2 could be an interesting material for realizing high-speed amplifiers and logic circuits with device scaling expected to result in further improvement of performance. Our work represents the first step in the realization of high-frequency analog and digital circuits based on two-dimensional semiconductors.Comment: Nano Letters (2014), Supplementary information available at http://dx.doi.org/10.1021/nl502863

Breakdown of High-Performance Monolayer MoS2

Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS2) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of a band gap and subnanometer thickness, monolayer MoS2 can be used for the fabrication of transistors exhibiting extremely high on/off ratios and very low power dissipation. Here, we report on the development of 2D MoS2 transistors with improved performance due to enhanced electrostatic control. Our devices show currents in the 100 mu A/mu m range and transconductance exceeding 20 mu S/mu m as well as current saturation. We also record electrical breakdown of our devices and find that MoS2 can support very high current densities, exceeding the current-carrying capacity of copper by a factor of 50. Our results push the performance limit of MoS2 and open the way to their use in low-power and low-cost analog and radio frequency circuits

Thickness-dependent mobility in two-dimensional MoS2

Two-dimensional (2D) semiconductors such as mono and few-layer molybdenum disulphide (MoS2) are very promising for integration in future electronics as they represent the ultimate miniaturization limit in the vertical direction. While monolayer MoS2 attracted considerable attention due to its broken inversion symmetry, spin/valley coupling and the presence of a direct band gap, few-layer MoS2 remains a viable option for technological application where its higher mobility and lower contact resistance are believed to offer an advantage. However, it remains unclear whether multilayers are intrinsically superior or if they are less affected by environmental effects. Here, we report the first systematic comparison of the field-effect mobilities in mono-, bi- and trilayer MoS2 transistors after thorough in situ annealing in vacuum. We show that the mobility of field-effect transistors (FETs) based on monolayer MoS2 is significantly higher than that of FETs based on two or three layers. We demonstrate that it is important to remove the influence of gaseous adsorbates and water before comparing mobilities, as monolayers exhibit the highest sensitivity to ambient air exposure. In addition, we study the influence of the substrate roughness and show that this parameter does not affect FET mobilities

Single-Layer MoS2 Electronics

CONSPECTUS: Atomic crystals of two-dimensional materials consisting of single sheets extracted from layered materials are gaining increasing attention. The most well-known material from this group is graphene, a single layer of graphite that can be extracted from the bulk material or grown on a suitable substrate. Its discovery has given rise to intense research effort culminating in the 2010 Nobel Prize in physics awarded to Andre Geim and Konstantin Novoselov. Graphene however represents only the proverbial tip of the iceberg, and increasing attention of researchers is now turning towards the veritable zoo of so-called "other 2D materials". They have properties complementary to graphene, which in its pristine form lacks a bandgap: MoS2, for example, is a semiconductor, while NbSe2 is a superconductor. They could hold the key to important practical applications and new scientific discoveries in the two-dimensional limit. This family of materials has been studied since the 1960s, but most of the research focused on their tribological applications: MoS2 is best known today as a high-performance dry lubricant for ultrahigh-vacuum applications and in car engines. The realization that single layers of MoS2 and related materials could also be used in functional electronic devices where they could offer advantages compared with silicon or graphene created a renewed interest in these materials. MoS2 is currently gaining the most attention because the material is easily available in the form of a mineral, molybdenite, but other 2D transition metal dichalcogenide (TMD) semiconductors are expected to have qualitatively similar properties.In this Account, we describe recent progress in the area of single-layer MoS2-based devices for electronic circuits. We will start with MoS2 transistors, which showed for the first time that devices based on MoS2 and related TMDs could have electrical properties on the same level as other, more established semiconducting materials. This allowed rapid progress in this area and was followed by demonstrations of basic digital circuits and transistors operating in the technologically relevant gigahertz range of frequencies, showing that the mobility of MoS2 and TMD materials is sufficiently high to allow device operation at such high frequencies.Monolayer MoS2 and other TMDs are also direct band gap semiconductors making them interesting for realizing optoelectronic devices. These range from simple phototransistors showing high sensitivity and low noise, to light emitting diodes and solar cells. All the electronic and optoelectronic properties of MoS2 and TMDs are accompanied by interesting mechanical properties with monolayer MoS2 being as stiff as steel and 30x stronger. This makes it especially interesting in the context of flexible electronics where it could combine the high degree of mechanical flexibility commonly associated with organic semiconductors with high levels of electrical performance. All these results show that MoS2 and TMDs are promising materials for electronic and optoelectronic applications

Ultrasensitive photodetectors based on monolayer MoS2

Two-dimensional materials are an emerging class of new materials with a wide range of electrical properties and potential practical applications. Although graphene(1) is the most well-studied two-dimensional material, single layers of other materials, such as insulating BN (ref. 2) and semiconducting MoS2 (refs 3,4) or WSe2 (refs 5,6), are gaining increasing attention as promising gate insulators and channel materials for field-effect transistors. Because monolayer MoS2 is a direct-bandgap semiconductor(7,8) due to quantum-mechanical confinement(7,9,10), it could be suitable for applications in optoelectronic devices where the direct bandgap would allow a high absorption coefficient and efficient electron-hole pair generation under photo-excitation. Here, we demonstrate ultrasensitive monolayer MoS2 phototransistors with improved device mobility and ON current. Our devices show a maximum external photoresponsivity of 880 AW(-1) at a wavelength of 561 nm and a photoresponse in the 400-680 nm range. With recent developments in large-scale production techniques such as liquid-scale exfoliation(11-13) and chemical vapour deposition-like growth(14,15), MoS2 shows important potential for applications in MoS2-based integrated optoelectronic circuits, light sensing, biomedical imaging, video recording and spectroscopy

Valley Zeeman effect in elementary optical excitations of monolayer WSe2

A monolayer of a transition metal dichalcogenide such as WSe2 is a two-dimensional direct-bandgap valley-semiconductor(1,2) having an effective honeycomb lattice structure with broken inversion symmetry. The inequivalent valleys in the Brillouin zone could be selectively addressed using circularly polarized light fields', suggesting the possibility for magneto-optical measurement and manipulation of the valley pseudospin degree of freedom(6-8). Here we report such experiments that demonstrate the valley Zeeman effect-strongly anisotropic lifting of the degeneracy of the valley pseudospin degree of freedom using an external magnetic field. The valley-splitting measured using the exciton transition deviates appreciably from values calculated using a three-band tight-binding model(9) for an independent electron-hole pair at +/- K valleys. We show, on the other hand, that a theoretical model taking into account the strongly bound nature of the exciton yields an excellent agreement with the experimentally observed splitting. In contrast to the exciton, the trion transition exhibits an unexpectedly large valley Zeeman effect that cannot be understood within the same framework, hinting at a different contribution to the trion magnetic moment. Our results raise the possibility of controlling the valley degree of freedom using magnetic fields in monolayer transition metal dichalcogenides or observing topological states of photons strongly coupled to elementary optical excitations in a microcavity(10)

Optically active quantum dots in monolayer WSe2

Semiconductor quantum dots have emerged as promising candidates for the implementation of quantum information processing, because they allow for a quantum interface between stationary spin qubits and propagating single photons(1-3). In the meantime, transition-metal dichalcogenide monolayers have moved to the forefront of solid-state research due to their unique band structure featuring a large bandgap with degenerate valleys and non-zero Berry curvature(4). Here, we report the observation of zero-dimensional anharmonic quantum emitters, which we refer to as quantum dots, in monolayer tungsten diselenide, with an energy that is 20-100 meV lower than that of two-dimensional excitons. Photon antibunching in second-order photon correlations unequivocally demonstrates the zero-dimensional anharmonic nature of these quantum emitters. The strong anisotropic magnetic response of the spatially localized emission peaks strongly indicates that radiative recombination stems from localized excitons that inherit their electronic properties from the host transition-metal dichalcogenide. The large similar to 1 meV zero-field splitting shows that the quantum dots have singlet ground states and an anisotropic confinement that is most probably induced by impurities or defects. The possibility of achieving electrical control in van der Waals heterostructures(5) and to exploit the spin-valley degree of freedom(6) renders transition-metal-dichalcogenide quantum dots interesting for quantum information processing

Performance of the FOS and GHRS Pt/(Cr)-Ne Hollow-cathode Lamps after their Return from Space and Comparison with Archival Data

The Space Telescope European Coordinating Facility (ST-ECF) and National Institute of Standards and Technology (NIST) are collaborating to study hollow cathode calibration lamps as used onboard the Hubble Space Telescope (HST). As part of the STIS Calibration Enhancement (STIS-CE) Project we are trying to improve our understanding of the performance of hollow cathode lamps and the physical processes involved in their long term operation. The original flight lamps from the Faint Object Spectrograph (FOS) and the Goddard High Resolution Spectrograph (GHRS) are the only lamps that have ever been returned to Earth after extended operation in space. We have taken spectra of all four lamps using NIST s 10.7-m normal-incidence spectrograph and Fourier transform spectrometer (FTS) optimized for use in the ultraviolet (UV). These spectra, together with spectra archived from six years of on-orbit operations and pre-launch spectra, provide a unique data set - covering a period of about 20 years - for studying aging effects in these lamps. Our findings represent important lessons for the choice and design of calibration sources and their operation in future UV and optical spectrographs in space