Voltage-Controlled ON-OFF-Switching of Magnetoresistance in FeOx/Fe/Au Aerogel Networks

Voltage control of magnetoresistance (MR) in nanoscale three-dimensional (3D) geometries is interesting from a fundamental point of view and a promising route toward novel sensors and energy-efficient computing schemes. Magneto-ionic mechanisms are favorable for low-voltage control of magnetism and room-temperature operation, but magneto-ionic control of MR has been studied only for planar geometries so far. We synthesize a 3D nanomaterial with magneto-ionic functionality by electrodepositing an iron hydroxide/iron coating on a porous nanoscale gold network (aerogel). To enable maximum magneto-ionic ON-OFF-switching, the thickness of the coating is adjusted to a few nanometers by a self-terminating electrodeposition process. In situ magnetotransport measurements during electrolytic gating of these nanostructures reveal large reversible changes in MR, including ON-OFF-switching of MR, with a small applied voltage difference (1.72 V). This effect is related to the electrochemical switching between a ferromagnetic iron shell/gold core nanostructure (negative MR at the reduction voltage) and an iron oxide shell/gold core nanostructure (negligible MR at the oxidation voltage)

Voltage-controlled on switching and manipulation of magnetization via the redox transformation of β-FeOOH nanoplatelets

Redox-based metal/metal oxide transformations achieved via electrolytic gating recently emerged as a novel, magneto-ionic route for voltage control of magnetism. So far, mainly metal or oxide thin films and nanoporous metal alloy structures are used as starting materials. The present study demonstrates a magneto-ionic transformation starting from a stable electrodeposited FeOOH nanoplatelet structure. The application of a low voltage in a Li-based electrolyte results in the reduction of the virtually non-magnetic FeOOH into ferromagnetic Fe, yielding an ON switching of magnetization. The magnetization can be tuned in a large range by the time of voltage application and remains stable after voltage-switch off. A reversible magneto-ionic change of magnetization of up to 15% is achieved in the resulting iron films with a thickness of about 30 nm. This large magneto-ionic effect is attributed to the enhanced roughness of the iron films obtained from the nanoplatelet structure. The robust, voltage-controlled, and non-volatile ON switching of magnetism starting from a stable oxide structure is promising for the development of energy-efficient magnetic switches, magnetic actuation and may offer new avenues in magnetoelectronic devices. © 2019 IOP Publishing Ltd

Control of Positive and Negative Magnetoresistance in Iron Oxide : Iron Nanocomposite Thin Films for Tunable Magnetoelectric Nanodevices

The perspective of energy-efficient and tunable functional magnetic nanostructures has triggered research efforts in the fields of voltage control of magnetism and spintronics. We investigate the magnetotransport properties of nanocomposite iron oxide/iron thin films with a nominal iron thickness of 5-50 nm and find a positive magnetoresistance at small thicknesses. The highest magnetoresistance was found for 30 nm Fe with +1.1% at 3 T. This anomalous behavior is attributed to the presence of Fe3O4-Fe nanocomposite regions due to grain boundary oxidation. At the Fe3O4/Fe interfaces, spin-polarized electrons in the magnetite can be scattered and reoriented. A crossover to negative magnetoresistance (-0.11%) is achieved at a larger thickness (>40 nm) when interface scattering effects become negligible as more current flows through the iron layer. Electrolytic gating of this system induces voltage-triggered redox reactions in the Fe3O4 regions and thereby enables voltage-tuning of the magnetoresistance with the locally oxidized regions as the active tuning elements. In the low-magnetic-field region (<1 T), a crossover from positive to negative magnetoresistance is achieved by a voltage change of only 1.72 V. At 3 T, a relative change of magnetoresistance about -45% during reduction was achieved for the 30 nm Fe sample. The present low-voltage approach signifies a step forward to practical and tunable room-temperature magnetoresistance-based nanodevices, which can boost the development of nanoscale and energy-efficient magnetic field sensors with high sensitivity, magnetic memories, and magnetoelectric devices in general. Copyright © 2020 American Chemical Society

Control of positive and negative magnetoresistance in iron oxide−iron nanocomposite thin films for tunable magnetoelectric nanodevices

The perspective of energy-efficient and tunable functional magnetic nanostructures has triggered research efforts in the fields of voltage control of magnetism and spintronics. We investigate the magnetotransport properties of nanocomposite iron oxide/iron thin films with a nominal iron thickness of 5-50 nm and find a positive magnetoresistance at small thicknesses. The highest magnetoresistance was found for 30 nm Fe with +1.1% at 3 T. This anomalous behavior is attributed to the presence of Fe3O4-Fe nanocomposite regions due to grain boundary oxidation. At the Fe3O4/Fe interfaces, spin-polarized electrons in the magnetite can be scattered and reoriented. A crossover to negative magnetoresistance (−0.11%) is achieved at a larger thickness (>40 nm) when interface scattering effects become negligible as more current flows through the iron layer. Electrolytic gating of this system induces voltage-triggered redox reactions in the Fe3O4 regions and thereby enables voltage-tuning of the magnetoresistance with the locally oxidized regions as the active tuning elements. In the low-magnetic-field region (<1 T), a crossover from positive to negative magnetoresistance is achieved by a voltage change of only 1.72 V. At 3 T, a relative change of magnetoresistance about −45% during reduction was achieved for the 30 nm Fe sample. The present low-voltage approach signifies a step forward to practical and tunable room-temperature magnetoresistance-based nanodevices, which can boost the development of nanoscale and energy-efficient magnetic field sensors with high sensitivity, magnetic memories, and magnetoelectric devices in general

Electrochemical nanostructuring of (111) oriented GaAs crystals: From porous structures to nanowires

A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and potentiostatic anodization modes. Anodization in NaCl electrolytes was found to result in the formation of porous structures with porosity controlled either by current under the galvanostatic anodization, or by the potential under the potentiostatic anodization. Possibilities to produce multilayer porous structures are demonstrated. At the same time, one-step anodization in a HNO3 electrolyte is shown to lead to the formation of GaAs triangular shape nanowires with high aspect ratio (400 nm in diameter and 100 μm in length). The new data are compared to those previously obtained through anodizing GaAs(100) wafers in alkaline KOH electrolyte. An IR photodetector based on the GaAs nanowires is demonstrated. © 2020 Monaico et al

Voltage‐Controlled Deblocking of Magnetization Reversal in Thin Films by Tunable Domain Wall Interactions and Pinning Sites

High energy efficiency of magnetic devices is crucial for applications such as data storage, computation, and actuation. Redox‐based (magneto‐ionic) voltage control of magnetism is a promising room‐temperature pathway to improve energy efficiency. However, for ferromagnetic metals, the magneto‐ionic effects studied so far require ultrathin films with tunable perpendicular magnetic anisotropy or nanoporous structures for appreciable effects. This paper reports a fully reversible, low voltage‐induced collapse of coercivity and remanence by redox reactions in iron oxide/iron films with uniaxial in‐plane anisotropy. In the initial iron oxide/iron films, Néel wall interactions stabilize a blocked state with high coercivity. During the voltage‐triggered reduction of the iron oxide layer, in situ Kerr microscopy reveals inverse changes of coercivity and anisotropy, and a coarsening of the magnetic microstructure. These results confirm a magneto‐ionic deblocking mechanism, which relies on changes of the Néel wall interactions, and of the microstructural domain‐wall‐pinning sites. With this approach, voltage‐controlled 180° magnetization switching with high energy‐efficiency is achieved. It opens up possibilities for developing magnetic devices programmable by ultralow power and for the reversible tuning of defect‐controlled materials in general

Size-Specific Magnetic Configurations in Electrodeposited Epitaxial Iron Nanocuboids: From Landau Pattern to Vortex and Single Domain States

International audienceAs the size of magnetic devices continuously decreases, the creation of threedimensional nanomagnets and the understanding of their magnetic configurations become increasingly important for modern applications. Here, by progressive nucleation during epitaxial nano-electrodeposition, we synthesize single-crystal iron nanocuboids with sizes ranging 10 nm to 200 nm on one sample. The size-dependent magnetic configurations of these nanocuboids are studied by quantitative magnetic force microscopy and electron holography. In conjunction, a "magnetic configuration versus size" phase diagram is established via micromagnetic simulations. Both experiment and theory reveal a sequential transition from Landau pattern to vortex and finally single domain when decreasing the nanocuboid size. The combinatorial-like approach leads to a quantitative understanding of the magnetic configurations of the nanomagnets in a broad size range. It can be transferred to other materials and shapes, and thereby presents an advanced route to enrich the material library for future nanodevice design

Voltage‐Controlled Deblocking of Magnetization Reversal in Thin Films by Tunable Domain Wall Interactions and Pinning Sites

High energy efficiency of magnetic devices is crucial for applications such as data storage, computation, and actuation. Redox‐based (magneto‐ionic) voltage control of magnetism is a promising room‐temperature pathway to improve energy efficiency. However, for ferromagnetic metals, the magneto‐ionic effects studied so far require ultrathin films with tunable perpendicular magnetic anisotropy or nanoporous structures for appreciable effects. This paper reports a fully reversible, low voltage‐induced collapse of coercivity and remanence by redox reactions in iron oxide/iron films with uniaxial in‐plane anisotropy. In the initial iron oxide/iron films, Néel wall interactions stabilize a blocked state with high coercivity. During the voltage‐triggered reduction of the iron oxide layer, in situ Kerr microscopy reveals inverse changes of coercivity and anisotropy, and a coarsening of the magnetic microstructure. These results confirm a magneto‐ionic deblocking mechanism, which relies on changes of the Néel wall interactions, and of the microstructural domain‐wall‐pinning sites. With this approach, voltage‐controlled 180° magnetization switching with high energy‐efficiency is achieved. It opens up possibilities for developing magnetic devices programmable by ultralow power and for the reversible tuning of defect‐controlled materials in general