Method of controlling defect orientation in silicon crystal ribbon growth

The orientation of twinning and other effects in silicon crystal ribbon growth is controlled by use of a starting seed crystal having a specific (110) crystallographic plane and (112) crystallographic growth direction

Removable preheater elements improve oxide induction furnace

Heat and corrosion resistant preheater elements are used in oxide induction furnaces to raise the temperature to the level for conducting electricity. These preheater elements are then removed and the induction coil energized

Silicon ribbon stress/strain workshop

Highlights of the Flat Plate Solar Array Project sponsored Silicon Ribbon Stress/Strain Workshop that was held 23 to 24 January 1985 are reported. The presentations and discussions were aimed at acquiring a generic understanding of the sources of stress, deformation, and structural characteristics occurring during the growth of silicon ribbon

Interaction of cracks with microstructure in polycrystalline ceramics Semiannual progress report

Monitoring stresses and detailed path by crack propagating in polycrystalline cerami

Fabrication of high-purity polycrystalline mgo

Chemical production and analysis of magnesium oxide - high purity polycrystalline fabricatio

Allowable silicon wafer thickness versus diameter for ingot rotation ID wafering

Inner diameter (ID) wafering of ingot rotation reduce the ID saw blade diameter was investigated. The blade thickness can be reduced, resulting in minimal kerf loss. However, significant breakage of wafers occurs during the rotation wafering as the wafer thickness decreases. Fracture mechanics was used to develop an equation relating wafer thickness, diameter and fracture behavior at the point of fracture by using a model of a wafer, supported by a center column and subjected to a cantilever force. It is indicated that the minimum allowable wafer thickness does not increase appreciably with increasing wafer diameter and that fracture through the thickness rather than through the center supporting column limits the minimum allowable wafer thickness. It is suggested that the minimum allowable wafer thickness can be reduced by using a vacuum chuck on the wafer surface to enhance cleavage fracture of the center core and by using 111 ingots

The mechanical behavior of tantalum carbide and magnesium oxide

Mechanical behavior of tantalum carbide and magnesium oxide polycrystalline ceramic

Grain boundary mobility in anion doped MgO

Certain anions OH(-), F(-) and Gl(-) are shown to enhance grain growth in MgO. The magnitude of their effect decreases in the order in which the anions are listed and depends on their location (solid-solution, second phase) in the MgO lattice. As most anions exhibit relatively high vapor pressures at sintering temperatures, they retard densification and invariably promote residual porosity. The role of anions on grain growth rates was studied in relation to their effect on pore mobility and pore removal; the atomic process controlling the actual rates was determined from observed kinetics in conjunction with the microstructural features. With respect to controlling mechanisms, the effects of all anions are not the same. OH(-) and F(-) control behavior through creation of a defect structure and a grain boundary liquid phase while Cl(-) promotes matter transport within pores by evaporation-condensation. Studies on an additional anion, S to the minus 2nd power gave results which were no different from undoped MgO, possibly because of evaporative losses during hot pressing. Hence, the effect of sulphur is negligible or undetermined

The role of anions in mechanical failure

Fabrication and properties of hot-pressed polycrystalline magnesium oxide containing anion impuritie

Role of anions in mechanical failure Annual report

Evaluation of anion impurities effects on mechanical failure of polycrystalline ceramic material