Peridynamic modelling of cracking in TRISO particles for high temperature reactors

A linear-elastic computer simulation (model) for a single particle of TRISO fuel has been built using a bond-based peridynamic technique implemented in the finite element code ‘Abaqus’. The model is able to consider the elastic and thermal strains in each layer of the particle and to simulate potential fracture both within and between layers. The 2D cylindrical model makes use of a plane stress approximation perpendicular to the plane modelled. The choice of plane stress was made by comparison of 2D and 3D finite element models. During an idealised ramp to normal operating power for a kernel of 0.267 W and a bulk fuel temperature of 1305 K, cracks initiate in the buffer near to the kernel-buffer interface and propagate towards the buffer-iPyC coating interface, but do not penetrate the iPyC and containment of the fission products is maintained. In extreme accident conditions, at around 600% (1.60 W) power during a power ramp at 100% power (0.267 W) per second, cracks were predicted to form on the kernel side of the kernel-buffer interface, opposite existing cracks in the buffer. These were predicted to then only grow further with further increases in power. The SiC coating was predicted to subsequently fail at a power of 940% (2.51 W), with cracks formed rapidly at the iPyC-SiC interface and propagating in both directions. These would overcome the containment to fission gas release offered by the SiC ‘pressure vessel’. The extremely high power at which failure was predicted indicates the potential safety benefits of the proposed high temperature reactor design based on TRISO fuel

Fruit-Surface Flavonoid Accumulation in Tomato Is Controlled by a SlMYB12-Regulated Transcriptional Network

The cuticle covering plants' aerial surfaces is a unique structure that plays a key role in organ development and protection against diverse stress conditions. A detailed analysis of the tomato colorless-peel y mutant was carried out in the framework of studying the outer surface of reproductive organs. The y mutant peel lacks the yellow flavonoid pigment naringenin chalcone, which has been suggested to influence the characteristics and function of the cuticular layer. Large-scale metabolic and transcript profiling revealed broad effects on both primary and secondary metabolism, related mostly to the biosynthesis of phenylpropanoids, particularly flavonoids. These were not restricted to the fruit or to a specific stage of its development and indicated that the y mutant phenotype is due to a mutation in a regulatory gene. Indeed, expression analyses specified three R2R3-MYB–type transcription factors that were significantly down-regulated in the y mutant fruit peel. One of these, SlMYB12, was mapped to the genomic region on tomato chromosome 1 previously shown to harbor the y mutation. Identification of an additional mutant allele that co-segregates with the colorless-peel trait, specific down-regulation of SlMYB12 and rescue of the y phenotype by overexpression of SlMYB12 on the mutant background, confirmed that a lesion in this regulator underlies the y phenotype. Hence, this work provides novel insight to the study of fleshy fruit cuticular structure and paves the way for the elucidation of the regulatory network that controls flavonoid accumulation in tomato fruit cuticle

Effect of ion irradiation on nanoindentation fracture and deformation in silicon carbide

Silicon carbide is desirable for many nuclear applications, making it necessary to understand how it deforms after irradiation. Ion implantation combined with nanoindentation is commonly used to measure radiation-induced changes to mechanical properties; hardness and modulus can be calculated from load–displacement curves, and fracture toughness can be estimated from surface crack lengths. Further insight into indentation deformation and fracture is required to understand the observed changes to mechanical properties caused by irradiation. This paper investigates indentation deformation using high-resolution electron backscatter diffraction (HR-EBSD) and Raman spectroscopy. Significant differences exist after irradiation: fracture is suppressed by swelling-induced compressive residual stresses, and the plastically deformed region extends further from the indentation. During focused ion beam cross-sectioning, indentation cracks grow, and residual stresses are modified. The results clarify the mechanisms responsible for the modification of apparent hardness and apparent indentation toughness values caused by the compressive residual stresses in ion-implanted specimens

Measurement of swelling-induced residual stress in ion implanted SiC, and its effect on micromechanical properties

Ion implantation is widely used as a surrogate for neutron irradiation in the investigation of radiation damage on the properties of materials. Due to the small depth of damage, micromechanical methods must be used to extract material properties. In this work, nanoindentation has been applied to ion irradiated silicon carbide to extract radiation-induced hardening. Residual stress is evaluated using HR-EBSD, AFM swelling measurements, and a novel microcantilever relaxation technique coupled with finite element modelling. Large compressive residual stresses of several GPa are found in the irradiated material, which contribute to the significant hardening observed in nanoindentation measurements. The origin of these residual stresses and the associated hardening is the unirradiated substrate which constrains radiation swelling. Comparisons with other materials susceptible to irradiation swelling show that this effect should not be neglected in studying the effects of ion irradiation damage on mechanical properties. This constraint may also be influencing fundamental radiation defects. This has significant implications for the suitability of ion implantation as a surrogate for neutron irradiations. These results demonstrate the significance of swelling-induced residual stresses in nuclear reactor components, and the impact on structural integrity of reactor components

The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide deduced from electron spectroscopy and ab initio simulations

Chemical disorder has previously been proposed as an explanation for the anomalously facile amorphization of silicon carbide (SiC), on the basis of topological connectivity arguments alone. In this exploratory study, “amorphous” (formally, aperiodic) SiC structures produced in ab initio molecular dynamics simulations were assessed for their connectivity topology and used to compute synthetic electron energy-loss spectra (EELS) using the ab initio real-space multiple scattering code FEFF. The synthesized spectra were compared to experimental EELS spectra collected from an ion-amorphized SiC specimen. A threshold level of chemical disorder χ (expressed as the ratio of the number of carbon-carbon bonds to the number of carbon-silicon bonds) was found to be χ ≈ 0.38, above which structural relaxation resulted in formally aperiodic structures. Different disordering methodologies resulted in identifiably different aperiodic structures, as assessed by local-cluster analysis and confirmed by collecting near-edge electron energy-loss spectra (ELNES). Such structural differences are predicted to arise for SiC crystals amorphized by irradiations involving different damage mechanisms—and therefore differing disordering mechanisms—for example, when contrasting the respective amorphized products of ion irradiation, neutron irradiation, and high-energy electron irradiation. Evidence for sp2-hybridized carbon bonding is observed, both experimentally in the irradiated sample and in simulations, and related to connectivity topology-based models for the amorphization of silicon carbide. New information about the probable intermediate-range structures present in amorphized silicon carbide is deduced from enumeration of primitive rings and evolution of local cluster configurations during the ab initio-modelled amorphization sequences