Iridium wire grid polarizer fabricated using atomic layer deposition

In this work, an effective multistep process toward fabrication of an iridium wire grid polarizer for UV applications involving a frequency doubling process based on ultrafast electron beam lithography and atomic layer deposition is presented. The choice of iridium as grating material is based on its good optical properties and a superior oxidation resistance. Furthermore, atomic layer deposition of iridium allows a precise adjustment of the structural parameters of the grating much better than other deposition techniques like sputtering for example. At the target wavelength of 250 nm, a transmission of about 45% and an extinction ratio of 87 are achieved

Fast optoelectric printing of plasmonic nanoparticles into tailored circuits

Plasmonic nanoparticles are able to control light at nanometre-scale by coupling electromagnetic fields to the oscillations of free electrons in metals. Deposition of such nanoparticles onto substrates with tailored patterns is essential, for example, in fabricating plasmonic structures for enhanced sensing. This work presents an innovative micro-patterning technique, based on optoelectic printing, for fast and straightforward fabrication of curve-shaped circuits of plasmonic nanoparticles deposited onto a transparent electrode often used in optoelectronics, liquid crystal displays, touch screens, etc. We experimentally demonstrate that this kind of plasmonic structure, printed by using silver nanoparticles of 40 nm, works as a plasmonic enhanced optical device allowing for polarized-color-tunable light scattering in the visible. These findings have potential applications in biosensing and fabrication of future optoelectronic devices combining the benefits of plasmonic sensing and the functionality of transparent electrodes

Imprinting the nanostructures on the high refractive index semiconductor glass

The centimeter range one-and two-dimensional nanostructures of 70nm pitch have been imprinted by hot pressing with a quartz, silicon or nickel mold, at 240 degrees C, onto the surface of Ge20As20Se14Te46 semiconductor glass. Excellent glass stability of this glass allows multiple re-pressing of the nano-structures. With increasing the Te/Se ratio in the glass formula, the refractive index reaches a value of 3.5 with an option of free electron absorption at elevated temperatures pointing out the use of such nanostructures in submicron and micron scale electronic devices/chips, moth eye structures and photonic crystals. (C) 2011 Elsevier B. V. All rights reserved.status: publishe