Impurity Influence on Nitride LEDs

Light emitting diodes (LEDs) are widely used nowadays. They are used in major parts of our life. But it is still necessary to improve their characteristics. In this paper the impurity and Indium atoms influence on the LEDs characteristics is investigated by computer simulation. Simulation was carried out in Sim Windows. The program was improved for this purpose by creating new files for AlGaInN heterostructure and devices including more than 25 basic parameters. It was found that characteristics depend on impurity and indium atoms changes a lot. The optimum impurity concentration for doping barriers between quan-tum wells was achieved. By varying impurity and Indium concentration the distribution in AlGaInN het-erostructure LEDs characteristics could be improved. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3610

Heterostructure Active Area Optimization by Simulation

Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel, each SLED has its own In-content and its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained. It was determined that the best structure for AlGaInN NH is p+GaN / p+Al0.2Ga0.8N / 4(n-InxGa1 – xN-n- GaN) / n+GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum radiation and two ones at the both ends of active region are “barriers” which help to concentrate electrons / holes in active region and additionally “protect” QW from different defects

Silicon Betavoltaic Batteries Structures

For low-power miniature energy creation sources the particular interest is nickel Ni63. This paper discusses the main types of betavoltaic battery structures with the prospects for industrial application using - isotope of nickel Ni63. It is shown that the prospects for improving the effective efficiency are planar multijunction betavoltaic batteries

Silicon Photodetectors Matrix Coordinate Bipolar Functionally Integrated Structures

In this paper a new approach for solving the detection and coordinate the detection of radiation in the optical range of 0.3-1.1 microns, based on the use of so-called bipolar functionally integrated structures (BI-FIS) in pixels photodetector arrays is discussed. Variants of new technical solutions based on photodetectors matrix pixel BI-FIS structures are shown. Their effectiveness and scope are evaluated

Heterostructure Active Area Optimization by Simulation

Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a LED having p-n junction area S0 can be considered as a sum of “SmallLEDs (SLEDs)” electrically connected in parallel, each SLED has its own In-content and its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained. It was determined that the best structure for AlGaInN NH is p+GaN / p+Al0.2Ga0.8N / 4(n-InxGa1 – xN-n- GaN) / n+GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum radiation and two ones at the both ends of active region are “barriers” which help to concentrate electrons / holes in active region and additionally “protect” QW from different defects

Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed

Microchannel Structures of Betavoltaic Silicon Convertors

The paper presents the first results of experimental research on the microchannel structures of betavoltaic silicon converters based on the 63Ni isotope. The areas for further optimization of constructive and technological performance with high conversion efficiency were detected experimentally

Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed

Simulation the Beta Power Sources Characteristics

In this paper the simulation of silicon beta-stimulated power sources spectral sensitivity characteristics was carried out. It was analyzed the influence of the semiconductor material characteristics (the doping level, lifetime) and power supply design on the photosensitive structures characteristics in order to optimize them

Thermal and Magnetic Field Sensors Based on Injection-coupled Devices

Operation principle and possible applications of a novel type of silicon integrated circuit (IC) device – injection-coupled device (ICD) – are addressed. Examples of possible ICD electrical and physical designs are examined in detail. These are based on the existing CMOS and use bipolar technologies. It is shown that in active mode only one cell of ICD-based sensor chain consumes power. This circumstance enables one to achieve an extraordinarily low power consumption compared to the CMOS ICs. This is because the power consumption of an ICD as a whole is not different of that of a single cell in its IC matrix. These advantages make ICDs highly attractive for a number of important applications, such as, e.g., radiation detectors or magnetic and thermal field detectors. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3625