Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors

Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. We studied the intrinsic effects of GBs within 5,11-bis(triethylsilylethynyl) anthradithiophene (TES-ADT) thin films on the electrical properties of OFETs. The GB density was easily changed by controlling nulceation event in TES-ADT thin films. When the mixing time was increased, the number of aggregates in as-spun TES-ADT thin films were increased and subsequent exposure of the films to 1,2-dichloroethane vapor led to a significant increase in the number of nuleation sites, thereby increasing the GB density of TES-ADT spherulites. The density of GBs strongly influences the angular spread and crystallographic orientation of TES-ADT spherulites. Accordingly, the FETs with higher GB densities showed much poorer electrical characteristics than devices with lower GB density. Especially, GBs provide charge trapping sites which are responsible for bias-stress driven electrical instability. Dielectric surface treatment with a polystyrene brush layer clarified the GB-induced charge trapping by reducing charge trapping at the semiconductor-dielectric interface. Our study provides an understanding on GB induced bias instability for the development of high performance OFETs

Permanent Pacemaker for Syncope after Heart Transplantation with Bicaval Technique

Sinus node dysfunction occurs occasionally after heart transplantation and may be caused by surgical trauma, ischemia to the sinus node, rejection, drug therapy, and increasing donor age. However, the timing and indication of permanent pacemaker insertion due to sinus node dysfunction following heart transplantation is contentious. Here, we report a case of a permanent pacemaker insertion for syncope due to sinus arrest after heart transplantation, even with a bicaval technique, which has been known to associate with few incidences of sinus node dysfunction

Effect of Crystallization Modes in TIPS-Pentacene/Insulating Polymer Blends on the Gas Sensing Properties of Organic Field-Effect Transistors

Blending organic semiconductors with insulating polymers has been known to be an effective way to overcome the disadvantages of single-component organic semiconductors for high-performance organic field-effect transistors (OFETs). We show that when a solution processable organic semiconductor (6,13-bis(triisopropylsilylethynyl)pentacene, TIPS-pentacene) is blended with an insulating polymer (PS), morphological and structural characteristics of the blend films could be significantly influenced by the processing conditions like the spin coating time. Although vertical phase-separated structures (TIPS-pentacene-top/PS-bottom) were formed on the substrate regardless of the spin coating time, the spin time governed the growth mode of the TIPS-pentacene molecules that phase-separated and crystallized on the insulating polymer. Excess residual solvent in samples spun for a short duration induces a convective flow in the drying droplet, thereby leading to one-dimensional (1D) growth mode of TIPS-pentacene crystals. In contrast, after an appropriate spin-coating time, an optimum amount of the residual solvent in the film led to two-dimensional (2D) growth mode of TIPS-pentacene crystals. The 2D spherulites of TIPS-pentacene are extremely advantageous for improving the field-effect mobility of FETs compared to needle-like 1D structures, because of the high surface coverage of crystals with a unique continuous film structure. In addition, the porous structure observed in the 2D crystalline film allows gas molecules to easily penetrate into the channel region, thereby improving the gas sensing properties

Organic Semiconductor/Insulator Polymer Blends for High-Performance Organic Transistors

We reviewed recent advances in high-performance organic field-effect transistors (OFETs) based on organic semiconductor/insulator polymer blends. Fundamental aspects of phase separation in binary blends are discussed with special attention to phase-separated microstructures. Strategies for constructing semiconductor, semiconductor/dielectric, or semiconductor/passivation layers in OFETs by blending organic semiconductors with an insulating polymer are discussed. Representative studies that utilized such blended films in the following categories are covered: vertical phase-separation, processing additives, embedded semiconductor nanowires

Inkjet Etching of Polymers and Its Applications in Organic Electronic Devices

Inkjet printing techniques for the etching of polymers and their application to the fabrication of organic electronic devices are reviewed. A mechanism is proposed for the formation of via holes in polymer layers through inkjet printing with solvent, and recent achievements in the fabrication with inkjet etching of various three-dimensional microstructures (i.e., microwells, microgrooves, hexagonal holes, and concave structures) are discussed. In addition, organic electronic devices are presented that use inkjet-etched subtractive patterns as platforms for the selective depositions of an emissive material, a liquid crystal, an organic conductor, an organic insulator, and an organic semiconductor, and as an optical waveguide

Suppression of the Unintentional Doping of Graphene Transisor for Gas Sensor by Blocking Charge Impurity on Substrate

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Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends

Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed

Microstructural Control of Soluble Acene Crystals for Field-Effect Transistor Gas Sensors

Microstructural control during the solution processing of small-molecule semiconductors (namely, soluble acene) is important for enhancing the performance of field-effect transistors (FET) and sensors. This focused review introduces strategies to enhance the gas-sensing properties (sensitivity, recovery, selectivity, and stability) of soluble acene FET sensors by considering their sensing mechanism. Defects, such as grain boundaries and crystal edges, provide diffusion pathways for target gas molecules to reach the semiconductor-dielectric interface, thereby enhancing sensitivity and recovery. Representative studies on grain boundary engineering, patterning, and pore generation in the formation of soluble acene crystals are reviewed. The phase separation and microstructure of soluble acene/polymer blends for enhancing gas-sensing performance are also reviewed. Finally, flexible gas sensors using soluble acenes and soluble acene/polymer blends are introduced, and future research perspectives in this field are suggested

Optimization of Gas-Sensing Properties in Poly(triarylamine) Field-Effect Transistors by Device and Interface Engineering

In this study, we investigated the gas-sensing mechanism in bottom-gate organic field-effect transistors (OFETs) using poly(triarylamine) (PTAA). A comparison of different device architectures revealed that the top-contact structure exhibited superior gas-sensing performance in terms of field-effect mobility and sensitivity. The thickness of the active layer played a critical role in enhancing these parameters in the top-contact structure. Moreover, the distance and pathway for charge carriers to reach the active channel were found to significantly influence the gas response. Additionally, the surface treatment of the SiO2 dielectric with hydrophobic self-assembled mono-layers led to further improvement in the performance of the OFETs and gas sensors by effectively passivating the silanol groups. Under optimal conditions, our PTAA-based gas sensors achieved an exceptionally high response (>200%/ppm) towards NO2. These findings highlight the importance of device and interface engineering for optimizing gas-sensing properties in amorphous polymer semiconductors, offering valuable insights for the design of advanced gas sensors