Serological response in RT-PCR confirmed h1n1-2009 influenza a by hemagglutination inhibition and virus neutralization assays: An observational study

10.1371/journal.pone.0012474PLoS ONE58

Zn Diffusion and α-Fe(Zn) Layer Growth During Annealing of Zn-Coated B Steel

Direct hot press forming of Zn-coated 22MnB5 steels is impeded by micro-cracks that occur in the substrate due to the presence of Zn during the forming process. A study was therefore undertaken to quantify concentration of Zn across the α-Fe(Zn) coating and on grain boundaries in the α-Fe(Zn) layer and the underlying γ-Fe(Zn) substrate after isothermal annealing of Zn-coated 22MnB5 at 1173 K (900 °C) and to link the Zn distribution to the amount and type of micro-cracks observed in deformed samples. Finite difference model was developed to describe Zn diffusion and the growth of the α-Fe(Zn) layer. The penetration of Zn into the γ-Fe(Zn) substrate after 600 seconds annealing at 1173 K (900 °C) through bulk diffusion is estimated to be 3 μm, and the diffusion depth of Zn on the γ-Fe(Zn) grain boundaries is estimated to be 6 μm, which is significantly shorter than the maximum length (15 to 50 μm) of the micro-cracks formed in the severely stressed conditions, indicating that the Zn diffusion into the γ-Fe(Zn) from the α-Fe(Zn) during annealing is not correlated to the depth of micro-cracks. On the other hand, the maximum amount of Zn present in α-Fe(Zn) layer decreases with annealing time as the layer grows and Zn oxidizes, and the amount of Zn-enriched areas inside the α-Fe(Zn) layer is reduced leading to reduced length of cracking. Solid-Metal-Induced Embrittlement mechanism is proposed to explain the benefit of extended annealing on reduced depth of micro-crack penetration into the γ-Fe(Zn) substrate

2009 Influenza A(H1N1) seroconversion rates and risk factors among distinct adult cohorts in Singapore

10.1001/jama.2010.404JAMA - Journal of the American Medical Association303141383-139

Platinum germanosilicide as source/drain contacts in P-channel fin field-effect transistors (FinFETs)

10.1109/TED.2009.2021351IEEE Transactions on Electron Devices5671458-1465IETD

Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain

10.1109/TED.2010.2045682IEEE Transactions on Electron Devices5761279-1286IETD

Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs

10.1109/LED.2009.2034111IEEE Electron Device Letters30121278-1280EDLE

Current-voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGen- (001) Ge contact

10.1063/1.1923162Journal of Applied Physics9711-JAPI

Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films

10.1063/1.3197144Journal of Applied Physics1064-JAPI

Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation

10.1149/1.3072677Journal of the Electrochemical Society1564H233-H238JESO

Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant

Digest of Technical Papers - Symposium on VLSI Technology106-107DTPT