Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

Using current-sweep measurements, the set process in SiOx-based resistive random access memory (RRAM) has been found to consist of multiple resistance-reduction steps. Variation in set behaviors was observed and attributed to different defect distributions in the resistance switching region. Physical mechanism of electroforming process is discussed, which further explains the observed variation of defect distributions. A compliance current study confirms that the achievable memory states of SiOx RRAM are determined by its set behavior. This finding provides additional insight on achieving multi-bit memory storage with SiOx RRAM. (C) 2015 AIP Publishing LLC.Microelectronics Research Cente

Vertical III-V nanowire field-effect transistor using nanosphere lithography

A vertical III-V nanowire Field-Effect Transistor (FET). The FET includes multiple nanowires or nanopillars directly connected to a drain contact, where each of the nanopillars includes a channel of undoped III-V semiconductor material. The FET further includes a gate dielectric layer surrounding the plurality of nanopillars and a gate contact disposed on a gate metal which is connected to the gate dielectric layer. Additionally, the FET includes a substrate of doped III-V semiconductor material connected to the nanopillars via a layer of doped III-V semiconductor material. In addition, the FET contains a source contact directly connected to the bottom of the substrate. By having such a structure, electrostatic control and integration density is improved. Furthermore, by using III-V materials as opposed to silicon, the current drive capacity is improved. Additionally, the FET is fabricated using nanosphere lithography which is less costly than the conventional photo lithography process.Board of Regents, University of Texas Syste

Tunnel field effect transistor (TFET) with lateral oxidation

A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region. The oxide region operates to reduce a tunneling effect in a tunnel region underlying a drain region, during an OFF-state of the TFET. The reduction in tunneling effect results in a reduction or elimination of a flow of OFF-state leakage current between the source region and the drain region. The TFET may have components made from group III-V compound materials.Board of Regents, University of Texas Syste

Operations Research And Operations Management: From Selective Optimization To System Optimization

The focus of this research paper is to discuss the development of Operations Management (OM) and Operations Research (OR) with respect to their use within the organization’s decision-making structure.  In addition, the difference in the tools and techniques of the two fields is addressed.  The question is raised as to how distinct the two academic fields have become in light of the application of their models to the service industry.  Suggestions are made regarding the possibility of incorporating OM/OR models and their output into the decision making structure of the organization towards the goal of “system optimization”

Discussion On Device Structures And Hermetic Encapsulation For SiOx Random Access Memory Operation In Air

An edge-free structure and hermetic encapsulation technique are presented that enable SiOx-based resistive random-access memory (RRAM) operation in air. A controlled etch study indicates that the switching filament is close to the SiOx surface in devices with an exposed SiOx edge. Electrical test of encapsulated, edge-free devices in 1 atmosphere air indicates stable switching characteristics, unlike devices with an edge. This work demonstrates that SiOx RRAM is able to operate in air with proper encapsulation and an edge-free structure. The resistive switching failure mechanism when operating in air is explained by the oxidation of hydrogen-complexed defects in the switching filament. (C) 2014 AIP Publishing LLC.National Science Foundation IIP-1127537Microelectronics Research Cente

The Kaon B-parameter in Mixed Action Chiral Perturbation Theory

We calculate the kaon B-parameter, B_K, in chiral perturbation theory for a partially quenched, mixed action theory with Ginsparg-Wilson valence quarks and staggered sea quarks. We find that the resulting expression is similar to that in the continuum, and in fact has only two additional unknown parameters. At one-loop order, taste-symmetry violations in the staggered sea sector only contribute to flavor-disconnected diagrams by generating an O(a^2) shift to the masses of taste-singlet sea-sea mesons. Lattice discretization errors also give rise to an analytic term which shifts the tree-level value of B_K by an amount of O(a^2). This term, however, is not strictly due to taste-breaking, and is therefore also present in the expression for B_K for pure G-W lattice fermions. We also present a numerical study of the mixed B_K expression in order to demonstrate that both discretization errors and finite volume effects are small and under control on the MILC improved staggered lattices.Comment: 29 pages, 4 figures; Expanded spurion discussion, other discussions clarified, version to appear in PR

Quantum and Classical Dissipative Effects on Tunnelling in Quantum Hall Bilayers

We discuss the interplay between transport and dissipation in quantum Hall bilayers. We show that quantum effects are relevant in the pseudospin picture of these systems, leading either to direct tunnelling currents or to quantum dissipative processes that damp oscillations around the ground state. These quantum effects have their origins in resonances of the classical spin system.Comment: 12 pages. Minor changes from v

On the Prediction of Growth Curves

1 online resource (PDF, 33 pages