The quasi-particle gap in a disordered boson Hubbard model in two dimensions

We investigate the behavior of the quasi-particle energy gap near quantum phase transitions in a two-dimensional disordered boson Hubbard model at a commensurate filling. Via Monte Carlo simulations of ensembles with fixed numbers of particles, we observe the behavior of the gap as a function of the tuning parameter for various strength of diagonal disorder. For weak disorder, we find that gapped Mott insulating phase is sustained up to the transition point and disappears only in a superfluid, strongly supporting a direct Mott-insulator-to-superfluid transition. Bose glass behavior, insulating with vanishing gap, appears only when the strength of disorder is bigger than a critical value

Course Function Value Theorems

Coarse functions are functions whose graphs appear to be continuous at a distance, but in fact may not be continuous. In this paper we explore examples and properties of coarse functions. We then generalize several basic theorems of continuous functions which apply to coarse functions

Experimental Study on the Dielectric Breakdown Voltage of the Insulating Oil Mixed with Magnetic Nanoparticles

AbstractIn this study, we have measured the dielectric breakdown voltage of transformer oil-based nanofluids in accordance with IEC 156 standard and have investigated the dielectric breakdown performance with the application of an external magnetic field and different volume concentrations of magnetic nanoparticles. It is confirmed that the dielectric breakdown voltage of pure transformer oil is about 10kV with a gap distance of 1mm between electrodes. In the case of our transformer oil-based nanofluids with 0.08% < Φ < 0.39% (Φ means the volume concentration of magnetic nanoparticles in the fluid), the dielectric breakdown voltage is three times higher than that of pure transformer oil. Furthermore, when the external magnetic field is applied under the experimental vessel, the dielectric breakdown voltage of the nanofluids is above 40kV, which is 30% higher than that without the external magnetic field

Putative cell adhesion membrane protein Vstm5 regulates neuronal morphology and migration in the central nervous system

During brain development, dynamic changes in neuronal membranes perform critical roles in neuronal morphogenesis and migration to create functional neural circuits. Among the proteins that induce membrane dynamics, cell adhesion molecules are important in neuronal membrane plasticity. Here, we report that V-set and transmembrane domain-containing protein 5 (Vstm5), a cell-adhesion-like molecule belonging to the Ig superfamily, was found in mouse brain. Knock-down of Vstm5 in cultured hippocampal neurons markedly reduced the complexity of dendritic structures, as well as the number of dendritic filopodia. Vstm5 also regulates neuronal morphology by promoting dendritic protrusions that later develop into dendritic spines. Using electroporationin utero, we found that Vstm5 overexpression delayed neuronal migration and induced multiple branches in leading processes during corticogenesis. These results indicate that Vstm5 is a new cell-adhesion-like molecule and is critically involved in synaptogenesis and corticogenesis by promoting neuronal membrane dynamics.SIGNIFICANCE STATEMENTNeuronal migration and morphogenesis play critical roles in brain development and function. In this study, we demonstrate for the first time that V-set and transmembrane domain-containing protein 5 (Vstm5), a putative cell adhesion membrane protein, modulates both the position and complexity of central neurons by altering their membrane morphology and dynamics. Vstm5 is also one of the target genes responsible for variations in patient responses to treatments for major depressive disorder. Our results provide the first evidence that Vstm5 is a novel factor involved in the modulation of the neuronal membrane and a critical element in normal neural circuit formation during mammalian brain development.</jats:p