Excitonic and Quasiparticle Life Time Effects on Silicon Electron Energy Loss Spectrum from First Principles

The quasiparticle decays due to electron-electron interaction in silicon are studied by means of first-principles all-electron GW approximation. The spectral function as well as the dominant relaxation mechanisms giving rise to the finite life time of quasiparticles are analyzed. It is then shown that these life times and quasiparticle energies can be used to compute the complex dielectric function including many-body effects without resorting to empirical broadening to mimic the decay of excited states. This method is applied for the computation of the electron energy loss spectrum of silicon. The location and line shape of the plasmon peak are discussed in detail.Comment: 4 pages, 3 figures, submitted to PR

Anisotropic thermal expansion of bismuth from first principles

Some anisotropy in both mechanical and thermodynamical properties of bismuth is expected. A combination of density functional theory total energy calculations and density functional perturbation theory in the local density approximation is used to compute the elastic constants at 0 K using a finite strain approach and the thermal expansion tensor in the quasiharmonic approximation. The overall agreement with experiment is good. Furthermore, the anisotropy in the thermal expansion is found to arise from the anisotropy in both the directional compressibilities and the directional Gr\"uneisen functions.Comment: accepted for publication in PR

Pressure-Induced Simultaneous Metal-Insulator and Structural-Phase Transitions in LiH: a Quasiparticle Study

A pressure-induced simultaneous metal-insulator transition (MIT) and structural-phase transformation in lithium hydride with about 1% volume collapse has been predicted by means of the local density approximation (LDA) in conjunction with an all-electron GW approximation method. The LDA wrongly predicts that the MIT occurs before the structural phase transition. As a byproduct, it is shown that only the use of the generalized-gradient approximation together with the zero-point vibration produces an equilibrium lattice parameter, bulk modulus, and an equation of state that are in excellent agreement with experimental results.Comment: 7 pages, 4 figures, submitted to Europhysics Letter

Huge excitonic effects in layered hexagonal boron nitride

The calculated quasiparticle band structure of bulk hexagonal boron nitride using the all-electron GW approximation shows that this compound is an indirect-band-gap semiconductor. The solution of the Bethe-Salpeter equation for the electron-hole two-particle Green function has been used to compute its optical spectra and the results are found in excellent agreement with available experimental data. A detailed analysis is made for the excitonic structures within the band gap and found that the excitons belong to the Frenkel class and are tightly confined within the layers. The calculated exciton binding energy is much larger than that obtained by Watanabe {\it et al} using a Wannier model to interpret their experimental results and assuming that h-BN is a direct-band-gap semiconductor.Comment: 4 pages, 3 figure

Electron-Hole Symmetry and Magnetic Coupling in Antiferromagnetic LaOFeAs

When either electron or hole doped at concentrations $x\sim 0.1$, the LaOFeAs family displays remarkably high temperature superconductivity with T$_c$ up to 55 K. In the most energetically stable $\vec Q_M = (\pi,\pi)$ antiferromagnetic (AFM) phase comprised of tetragonal-symmetry breaking alternating chains of aligned spins, there is a deep pseudogap in the Fe 3d states centered at the Fermi energy, and very strong magnetophonon coupling is uncovered. Doping (of either sign) beyond $x \sim 0.1$ results in Fe 3d heavy mass carriers ($m^*\sim 4-8$) with a large Fermi surface. Calculated Fe-Fe transverse exchange couplings $J_{ij}(R)$ reveal that exchange coupling is strongly dependent on the AFM symmetry and Fe-As distance.Comment: 5 pages, 5 figures, submitted to pr

Evolving properties of two dimensional materials, from graphene to graphite

We have studied theoretically, using density functional theory, several materials properties when going from one C layer in graphene to two and three g raphene layers and on to graphite. The properties we have focused on are the elastic constants, electronic structure (energy bands and density of state s), and the dielectric properties. For any of the properties we have investigated the modification due to an increase in the number of graphene layers is within a few percent. Our results are in agreement with the analysis presented recently by Kopelevich and Esquinazi (unpublished)

Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides

Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive interest as a class of graphene-like semiconductors with a desired band-gap in the visible frequency range. The monolayers feature a valence band spin splitting with opposite sign in the two valleys located at corners of 1st Brillouin zone. This spin-valley coupling, particularly pronounced in tungsten dichalcogenides, can benefit potential spintronics and valleytronics with the important consequences of spin-valley interplay and the suppression of spin and valley relaxations. Here we report the first optical studies of WS2 and WSe2 monolayers and multilayers. The efficiency of second harmonic generation shows a dramatic even-odd oscillation with the number of layers, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer). Photoluminescence (PL) measurements show the crossover from an indirect band gap semiconductor at mutilayers to a direct-gap one at monolayers. The PL spectra and first-principle calculations consistently reveal a spin-valley coupling of 0.4 eV which suppresses interlayer hopping and manifests as a thickness independent splitting pattern at valence band edge near K points. This giant spin-valley coupling, together with the valley dependent physical properties, may lead to rich possibilities for manipulating spin and valley degrees of freedom in these atomically thin 2D materials

Systematic Study on Fluorine-doping Dependence of Superconducting and Normal State Properties in LaFePO1-xFx

We have investigated the fluorine-doping dependence of lattice constants, transports and specific heat for polycrystalline LaFePO1-xFx. F doping slightly and monotonically decreases the in-plane lattice parameter. In the normal state, electrical resistivity at low temperature is proportional to the square of temperature and the electronic specific heat coefficient has large value, indicating the existence of moderate electron-electron correlation in this system. Hall coefficient has large magnitude, and shows large temperature dependence, indicating the low carrier density and multiple carriers in this system. Temperature dependence of the upper critical field suggests that the system is a two gap superconductor. The F-doping dependence of these properties in this system are very weak, while in the FeAs system (LaFeAsO), the F doping induces the large changes in electronic properties. This difference is probably due to the different F-doping dependence of the lattice in these two systems. It has been revealed that a pure effect of electron doping on electronic properties is very weak in this Fe pnictide compound.Comment: 8 pages, 5 figures, accepted for publication in J. Phys. Soc. Jp

Effect of Semicore Orbitals on the Electronic Band Gaps of Si, Ge, and GaAs within the GW Approximation

We study the effect of semicore states on the self-energy corrections and electronic energy gaps of silicon, germanium and GaAs. Self-energy effects are computed within the GW approach, and electronic states are expanded in a plane-wave basis. For these materials, we generate {\it ab initio} pseudopotentials treating as valence states the outermost two shells of atomic orbitals, rather than only the outermost valence shell as in traditional pseudopotential calculations. The resulting direct and indirect energy gaps are compared with experimental measurements and with previous calculations based on pseudopotential and ``all-electron'' approaches. Our results show that, contrary to recent claims, self-energy effects due to semicore states on the band gaps can be well accounted for in the standard valence-only pseudopotential formalism.Comment: 6 pages, 3 figures, submitted to Phys. Rev.

Possible unconventional superconductivity in iron-based layered compound LaFePO: Study of heat capacity

Heat capacity measurements were performed on recently discovered iron based layered superconductors, non doped LaFePO and fluorine doped LaFePO. A relatively large electronic heat capacity coefficient and a small normalized heat capacity jump at Tc = 3.3 K were observed in LaFePO. LaFePO0.94F0.06 had a smaller electronic heat capacity coefficient and a larger normalized heat capacity jump at Tc = 5.8 K. These values indicate that these compounds have strong electron electron correlation and magnetic spin fluctuation, which are the signatures of unconventional superconductivity mediated by spin fluctuation.Comment: 15 Pages, 3 Figure