Stabilizing the surface morphology of Si1–x–yGexCy/Si heterostructures grown by molecular beam epitaxy through the use of a silicon-carbide source

Si1–x–yGexCy/Si superlattices were grown by solid-source molecular beam epitaxy using silicon carbide as a source of C. Samples consisting of alternating layers of nominally 25 nm Si1–x–yGexCy and 35 nm Si for 10 periods were characterized by high-resolution x-ray diffraction, transmission electron microscopy (TEM), and Rutherford backscattering spectrometry to determine strain, thickness, and composition. C resonance backscattering and secondary ion mass spectrometries were used to measure the total C concentration in the Si1–x–yGexCy layers, allowing for an accurate determination of the substitutional C fraction to be made as a function of growth rate for fixed Ge and substitutional C compositions. For C concentrations close to 1%, high-quality layers were obtained without the use of Sb-surfactant mediation. These samples were found to be structurally perfect to a level consistent with cross-sectional TEM (< 10^7 defects/cm^2) and showed considerably improved homogeneity as compared with similar structures grown using graphite as the source for C. For higher Ge and C concentrations, Sb-surfactant mediation was found to be required to stabilize the surface morphology. The maximum value of substitutional C concentration, above which excessive generation of stacking fault defects caused polycrystalline and/or amorphous growth, was found to be approximately 2.4% in samples containing between 25 and 30% Ge. The fraction of substitutional C was found to decrease from roughly 60% by a factor of 0.86 as the Si1–x–yGexCy growth rate increased from 0.1 to 1.0 nm/s

Electronic properties of Si/Si1–x–yGexCy heterojunctions

We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si1–x–yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si1–x–yGexCy heterojunctions indicate that incorporation of C into Si1–x–yGexCy lowers both the valence- and conduction-band edges compared to those in Si1–xGex by an average of 107 ± 6 meV/% C and 75 ± 6 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si1–x–yGexCy and with measurements of conduction band offsets in Si/Si1–yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C (0.29–1.6 at. %), none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed

Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures

Deep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Four deep levels have been observed at various activation energies ranging from 231 to 405 meV below the conduction band. The largest deep-level concentration observed was in the deepest level and was found to be approximately 2 × 10^15 cm^–3. Although a large amount of nonsubstitutional C was present in the alloy layers (1–2 at. %), no deep levels were observed at any energy levels that, to the best of our knowledge, have been previously attributed to interstitial C

Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy

We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Initial results from the Caltech/DRSI balloon-borne isotope experiment

The Caltech/DSRI balloonborne High Energy Isotope Spectrometer Telescope (HEIST) was flown successfully from Palestine, Texas on 14 May, 1984. The experiment was designed to measure cosmic ray isotopic abundances from neon through iron, with incident particle energies from approx. 1.5 to 2.2 GeV/nucleon depending on the element. During approximately 38 hours at float altitude, 100,000 events were recorded with Z or = 6 and incident energies approx. 1.5 GeV/nucleon. We present results from the ongoing data analysis associated with both the preflight Bevalac calibration and the flight data

OPTIMALLY STAGGERED FINNED CIRCULAR AND ELLIPTIC TUBES IN FORCED CONVECTION

This work presents a three-dimensional (3-D) numerical and experimental geometric optimization study to maximize the total heat transfer rate between a bundle of finned tubes in a given volume and a given external flow both for circular and elliptic arrangements, for general staggered configurations. The optimization procedure started by recognizing the design limited space availability as a fixed volume constraint. The experimental results were obtained for circular and elliptic configurations with a fixed number of tubes (12), starting with an equilateral triangle configuration, which fitted uniformly into the fixed volume with a resulting maximum dimensionless tube-to-tube spacing S/2b = 1.5, where S is the actual spacing and b is the smaller ellipse semi-axis. Several experimental configurations were built by reducing the tube-to-tube spacings, identifying the optimal spacing for maximum heat transfer. Similarly, it was possible to investigate the existence of optima with respect to other two geometric degrees of freedom, i.e., tube eccentricity and fin-to-fin spacing. The results are reported for air as the external fluid in the laminar regime, for 125 and 100 Re 2b , where 2b is the ellipses smaller axis length. Circular and elliptic arrangements with the same flow obstruction cross-sectional area were compared on the basis of maximum total heat transfer. This criterion allows one to quantify the heat transfer gain in the most isolated way possible, by studying arrangements with equivalent total pressure drops independently of the tube cross section shape. This paper reports three-dimensional (3- D) numerical optimization results for finned circular and elliptic tubes arrangements, which are validated by direct comparison with experimental measurements with good agreement. Global optima with respect to tube-to-tube spacing, eccentricity and fin-tofin spacing ( 0.5 e 0.5, S/2b and 06 . 0 f for 125 and 100 Re 2b , respectively) were found and reported in general dimensionless variables. A relative heat transfer gain of up to 19% is observed in the optimal elliptic arrangement, as compared to the optimal circular one. The heat transfer gain, combined with the relative material mass reduction of up to 32% observed in the optimal elliptic arrangement in comparison to the circular one, show the elliptical arrangement has the potential for a considerably better overall performance and lower cost than the traditional circular geometry

Multigrid Monte Carlo Algorithms for SU(2) Lattice Gauge Theory: Two versus Four Dimensions

We study a multigrid method for nonabelian lattice gauge theory, the time slice blocking, in two and four dimensions. For SU(2) gauge fields in two dimensions, critical slowing down is almost completely eliminated by this method. This result is in accordance with theoretical arguments based on the analysis of the scale dependence of acceptance rates for nonlocal Metropolis updates. The generalization of the time slice blocking to SU(2) in four dimensions is investigated analytically and by numerical simulations. Compared to two dimensions, the local disorder in the four dimensional gauge field leads to kinematical problems.Comment: 24 pages, PostScript file (compressed and uuencoded), preprint MS-TPI-94-

Genome Symbols in the Triticeae (Poaceae)

A system for the application of nuclear genome symbols in the tribe Triticeae is proposed. It is based mainly on prevailing symbols. In agreement with this, the system uses individual upper case letters as symbols in the first place. Since the number of basic nuclear genomes in the Triticeae exceeds the number of single letters in the Roman alphabet, some basic genomes are designated with an upper case letter followed by a lower case letter, e.g. Ns for the genome of Psathyrostachys. Superscripts in small letters are used when modified versions of a basic genome are referred to, e.g. HP for the genome found in Hordeum pusillum. Unknown or equivocally identified genomes are designated by X followed by a lower case letter, e.g. Xu for Hordeum murinum. Underline of the relevant genome symbol can be used to indicate the origin of the cytoplasm