Phase Diffusion in Single-Walled Carbon Nanotube Josephson Transistors

We investigate electronic transport in Josephson junctions formed by single-walled carbon nanotubes coupled to superconducting electrodes. We observe enhanced zero-bias conductance (up to 10e^2/h) and pronounced sub-harmonic gap structures in differential conductance, which arise from the multiple Andreev reflections at superconductor/nanotube interfaces. The voltage-current characteristics of these junctions display abrupt switching from the supercurrent branch to resistive branch, with a gate-tunable switching current ranging from 50 pA to 2.3 nA. The finite resistance observed on the supercurrent branch and the magnitude of the switching current are in good agreement with calculation based on the model of classical phase diffusion

Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode

A low threshold buried heterostructure laser, a metal-semiconductor field-effect transistor, and a p-i-n photodiode have been integrated on a semi-insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater. The gain bandwidth product of the repeater was measured to be 178 MHz

Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater

A low threshold buried heterostructure laser, a metal-semiconductor field effect transistor (MESFET), and a photodiode, have for the first time, been monolithically integrated on a semi-insulating GaAs substrate. This integrated optoelectronic circuit (IOEC) was operated as a rudimentary optical repeater. The incident optical signal is detected by the photodiode, amplified by the MESFET, and converted back to light by the laser. The gain bandwidth product of the repeater was measured to be 178 MHz

High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate

A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate. The 75-µm-diam photodiode has a 3-dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65%). The diode is suitable for monolithic integration with other optoelectronic devices

Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequencies

Experimental and theoretical studies indicate that a high-frequency laser with bandwidths up to X-band frequencies (~> 10 GHz) should be one having a short cavity with a window structure, and preferably operating at low temperatures. These designs would accomplish the task of shortening the photon lifetime, increasing the intrinsic optical gain, and increasing the internal photon density without inflicting mirror damage. A modulation bandwidth of >8 GHz has been achieved using a 120-µm laser without any special window structure at room temperature

Superluminescent damping of relaxation resonance in the modulation response of GaAs lasers

It is demonstrated experimentally that the intrinsic modulation response of injection lasers can be modified by reducing mirror reflectivities, which leads to suppression of relaxation oscillation resonance and a reduction of nonlinear distortions up to multi-GHz frequencies. A totally flat response with a 3-dB bandwidth of 5 GHz was obtained using antireflection coated buried heterostructure lasers fabricated on a semi-insulating substrate. Harmonic distortions were below 40 dB within the entire 3-dB bandwidth. These results are in accord with theoretical predictions based on an analysis which include the effects of superluminescence in the laser cavity

A review of net zero energy buildings in hot and humid climates: Experience learned from 34 case study buildings

Sustainable development in the building sector requires the integration of energy efficiency and renewable energy utilization in buildings. In recent years, the concept of net zero energy buildings (NZEBs) has become a potential plausible solution to improve efficiency and reduce energy consumption in buildings. To achieve an NZEB goal, building systems and design strategies must be integrated and optimized based on local climatic conditions. This paper provides a comprehensive review of NZEBs and their current development in hot and humid regions. Through investigating 34 NZEB cases around the world, this study summarized NZEB key design strategies, technology choices and energy performance. The study found that passive design and technologies such as daylighting and natural ventilation are often adopted for NZEBs in hot and humid climates, together with other energy efficient and renewable energy technologies. Most NZEB cases demonstrated site annual energy consumption intensity less than 100 kW-hours (kWh) per square meter of floor space, and some buildings even achieved “net-positive energy” (that is, they generate more energy locally than they consume). However, the analysis also shows that not all NZEBs are energy efficient buildings, and buildings with ample renewable energy adoption can still achieve NZEB status even with high energy use intensity. This paper provides in-depth case-study-driven analysis to evaluate NZEB energy performance and summarize best practices for high performance NZEBs. This review provides critical technical information as well as policy recommendations for net zero energy building development in hot and humid climates