Neutrinos and Energetics of the Earth

We estimate terrestrial antineutrino and neutrino fluxes according to different models of Earth composition. We find large variations, corresponding to uncertainties on the estimated $U$, $Th$ and $K$ abundances in the mantle. Information on the mantle composition can be derived from antineutrino flux measurements after subtracting the crust contribution. This requires a good description of the crust composition in the region of the detector site. Measurements of terrestrial antineutrinos will provide a direct insight on the main sources of Earth's heat flow.Comment: 11 pages, RevTeX file. To appear on Phys. Lett. B. Addendum contains comparison with KamLAND result

CaCu_3Ti_4O_12/CaTiO_3 Composite Dielectrics: A Ba/Pb-free Ceramics with High Dielectric Constants

We have measured dielectric properties of Ca$_{1+x}$Cu$_{3-x}$Ti$_4$O$_{12}$ ($x$ = 0, 0.1, 0.5, 1, 1.5, 2, 2.9 and 3), and have found that Ca$_2$Cu$_2$Ti$_4$O$_{12}$ (a composite of CaCu$_3$Ti$_4$O$_{12}$ and CaTiO$_3$) exhibits a high dielectric constant of 1800 with a low dissipation factor of 0.02 below 100 kHz from 220 to 300 K. These are comparable to (or even better than) those of the Pb/Ba-based ceramics, which could be attributed to a barrier layer of CaTiO$_3$ on the surface of the CaCu$_3$Ti$_4$O$_{12}$ grains. The composite dielectric ceramics reported here are environmentally benign as they do not contain Ba/Pb.Comment: 4 pages, 4 figures, Appl. Phys. Lett. (scheduled on July 25, 2005

Phonons in the beta-tin, Imma, and sh phases of Silicon from ab initio calculations

We present a new interpretation of measured Raman frequencies of a high-pressure structure of Silicon which was assigned previously to the beta-tin phase. Our results show that the beta-tin->Imma->sh phase transitions have been already indicated in this experiment which was performed before the discovery of the Imma phase. We have calculated phonon-dispersion curves for the beta-tin, Imma, and sh phases of silicon using the plane-wave pseudopotential approach to the density-functional theory and the density-functional perturbation theory within the local density approximation. With the new assignment, the calculated phonon frequencies display an excellent agreement with the experimental data, and can be also used to determine precisely the transition pressure for the Imma->beta-tin phase transition. The sh->Imma transition is accompanied by soft modes.Comment: 4 pages, 5 figure

Huge Seebeck coefficients in non-aqueous electrolytes

The Seeebeck coefficients of the non-aqueous electrolytes tetrabutylammonium nitrate, tetraoctylphosphonium bromide and tetradodecylammonium nitrate in 1-octanol, 1-dodecanol and ethylene-glycol are measured in a temperature range from T=30 to T=45 C. The Seebeck coefficient is generally of the order of a few hundreds of microvolts per Kelvin for aqueous solution of inorganic ions. Here we report huge values of 7 mV/K at 0.1M concentration for tetrabutylammonium nitrate in 1-dodecanol. These striking results open the question of unexpectedly large kosmotrope or "structure making" effects of tetraalkylammonium ions on the structure of alcohols.Comment: Submitted to J. Chem. Phy

Photoluminescence pressure coefficients of InAs/GaAs quantum dots

We have investigated the band-gap pressure coefficients of self-assembled InAs/GaAs quantum dots by calculating 17 systems with different quantum dot shape, size, and alloying profile using atomistic empirical pseudopotential method within the ``strained linear combination of bulk bands'' approach. Our results confirm the experimentally observed significant reductions of the band gap pressure coefficients from the bulk values. We show that the nonlinear pressure coefficients of the bulk InAs and GaAs are responsible for these reductions. We also find a rough universal pressure coefficient versus band gap relationship which agrees quantitatively with the experimental results. We find linear relationships between the percentage of electron wavefunction on the GaAs and the quantum dot band gaps and pressure coefficients. These linear relationships can be used to get the information of the electron wavefunctions.Comment: 8 pages, 2 tables, 4 figure

Magnetic properties of HO2 thin films

We report on the magnetic and transport studies of hafnium oxide thin films grown by pulsed-laser deposition on sapphire substrates under different oxygen pressures, ranging from 10-7 to 10-1 mbar. Some physical properties of these thin films appear to depend on the oxygen pressure during growth: the film grown at low oxygen pressure (P ~= 10-7 mbar) has a metallic aspect and is conducting, with a positive Hall signal, while those grown under higher oxygen pressures (7 x 10-5 <= P <= 0.4 mbar) are insulating. However, no intrinsic ferromagnetic signal could be attributed to the HfO2 films, irrespective of the oxygen pressure during the deposition.Comment: 1

Interatomic potentials for the vibrational properties of III-V semiconductor nanostructures

We derive interatomic potentials for zinc blende InAs, InP, GaAs and GaP semiconductors with possible applications in the realm of nanostructures. The potentials include bond stretching interaction between the nearest and next-nearest neighbors, a three body term and a long-range Coulomb interaction. The optimized potential parameters are obtained by (i) fitting to bulk phonon dispersions and elastic properties and (ii) constraining the parameter space to deliver well behaved potentials for the structural relaxation and vibrational properties of nanostructure clusters. The targets are thereby calculated by density functional theory for clusters of up to 633 atoms. We illustrate the new capability by the calculation Kleinman and Gr\"uneisen parameters and of the vibrational properties of nanostructures with 3 to 5.5 nm diameter.Comment: 22 pages, 5 figures; Phys. Rev. B 201

Self-consistent model for ambipolar tunneling in quantum-well systems

We present a self-consistent approach to describe ambipolar tunneling in asymmetrical double quantum wells under steady-state excitation and extend the results to the case of tunneling from a near-surface quantum well to surface states. The results of the model compare very well with the behavior observed in photoluminescence experiments in $InGaAs/InP$ asymmetric double quantum wells and in near-surface $AlGaAs/GaAs$ single quantum wells.Comment: 10 pages, REVTeX 3.

Carrier relaxation mechanisms in self-assembled (In,Ga)As/GaAs quantum dots: Efficient P -> S Auger relaxation of electrons

We calculate the P-shell--to-S-shell decay lifetime \tau(P->S) of electrons in lens-shaped self-assembled (In,Ga)As/GaAs dots due to Auger electron-hole scattering within an atomistic pseudopotential-based approach. We find that this relaxation mechanism leads to fast decay of \tau(P->S)~1-7 ps for dots of different sizes. Our calculated Auger-type P-shell--to-S-shell decay lifetimes \tau(P->S) compare well to data in (In,Ga)As/GaAs dots, showing that as long as holes are present there is no need for an alternative polaron mechanism.Comment: Version published in Phys. Rev.

Electron-phonon-scattering dynamics in ferromagnetic metals and its influence on ultrafast demagnetization processes

We theoretically investigate spin-dependent carrier dynamics due to the electron-phonon interaction after ultrafast optical excitation in ferromagnetic metals. We calculate the electron-phonon matrix elements including the spin-orbit interaction in the electronic wave functions and the interaction potential. Using the matrix elements in Boltzmann scattering integrals, the momentum-resolved carrier distributions are obtained by solving their equation of motion numerically. We find that the optical excitation with realistic laser intensities alone leads to a negligible magnetization change, and that the demagnetization due to electron-phonon interaction is mostly due to hole scattering. Importantly, the calculated demagnetization quenching due to this Elliot-Yafet type depolarization mechanism is not large enough to explain the experimentally observed result. We argue that the ultrafast demagnetization of ferromagnets does not occur exclusively via an Elliott-Yafet type process, i.e., scattering in the presence of the spin-orbit interaction, but is influenced to a large degree by a dynamical change of the band structure, i.e., the exchange splitting