Sustainable Growth and Ethics: a Study of Business Ethics in Vietnam Between Business Students and Working Adults

Sustainable growth is not only the ultimate goal of business corporations but also the primary target of local governments as well as regional and global economies. One of the cornerstones of sustainable growth is ethics. An ethical organizational culture provides support to achieve sustainable growth. Ethical leaders and employees have great potential for positive influence on decisions and behaviors that lead to sustainability. Ethical behavior, therefore, is expected of everyone in the modern workplace. As a result, companies devote many resources and training programs to make sure their employees live according to the high ethical standards. This study provides an analysis of Vietnamese business students’ level of ethical maturity based on gender, education, work experience, and ethics training. The results of data from 260 business students compared with 704 working adults in Vietnam demonstrate that students have a significantly higher level of ethical maturity. Furthermore, gender and work experience are significant factors in ethical maturity. While more educated respondents and those who had completed an ethics course did have a higher level of ethical maturity, the results were not statistically significant. Analysis of the results along with suggestions and implications are provided

Single shot measurement of a silicon single electron transistor

We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pulse. Relaxation times up to 90 us are observed, suggesting the presence of well isolated electron excitations within the device. It is expected that these are associated with long decoherence time and the device may be suitable for quantum information processing

Effect of a tilted magnetic field on the orientation of Wigner crystals

We study the effect of a tilted magnetic field on the orientation of Wigner crystals by taking account of the width of a quantum well in the $z$-direction. It is found that the cohesive energy of the electronic crystal is always lower for the $[110]$ direction parallel to the in-plane field. In a realistic sample, a domain structure forms in the electronic solid and each domain orients randomly when the magnetic field is normal to the quantum well. As the field is tilted an angle, the electronic crystal favors to align along a preferred direction which is determined by the in-plane magnetic field. The orientation stabilization is strengthened for wider quantum wells as well as for larger tilted angles. Possible consequence of the tilted field on the transport property in the electronic solid is discussed

Effects of multi-pion correlations on the source distribution in ultra-relativustic heavy-ion collisions

Multi-pion correlation effect on the source distribution is studied. It is shown that multi-pion Bose-Einstein correlation make the average radius of the pion source become smaller. The isospin effect on the pion multiplicity distribution and the source distribution is also discussed.Comment: 8 pages, four figures. Phys. Rev. C in pres

Predicting the understandability of OWL inferences

In this paper, we describe a method for predicting the understandability level of inferences with OWL. Specifically, we present a model for measuring the understandability of a multiple-step inference based on the measurement of the understandability of individual inference steps. We also present an evaluation study which confirms that our model works relatively well for two-step inferences with OWL. This model has been applied in our research on generating accessible explanations for an entailment of OWL ontologies, to determine the most understandable inference among alternatives, from which the final explanation is generated

Surface and Sub-Surface Composition and Properties of Ion-Bombarded Lithium Alloys

Lithium-bearing alloys such as Si-Li, Al-Li and Cu-Li are of importance in a variety of technological applications, many of them depending on the fact that the surface composition of these alloys differs significantly from that of the bulk, both at thermal equilibrium and under ion bombardment. During ion sputtering, these materials exhibit a variety of phenomena which affect the surface composition and concentration depth profile in a complex manner. We present here experimental measurements of the surface and near-surface composition profiles of sputtered Cu-Li and Al-Li alloys. The experimental results are interpreted in terms of surface loss and radiation-induced segregation processes. Emphasis is placed on the use of these materials for use as plasma-interactive components in magnetic-confinement fusion applications

Manifestations of Extra Dimensions in a Neutrino Telescope

Theories with large extra dimensions provide the possibility that a flavor neutrino, localized in a 3+1 brane, can mix with a singlet neutrino living in the bulk. This mixing leads to unconventional patterns of neutrino matter oscillations and we examine in details how these oscillations depend upon two parameters: the brane-bulk coupling $\xi$ and the effective mass $\mu$ of the flavor neutrino inside matter. We find that high energy $(E \ge 50$ GeV) $\nu_\mu$ neutrinos, to be detected by neutrino telescopes, can give signals of extra dimensions. With a 1 k$m^{3}$ neutrino telescope extra dimensions with radius down to $1\mu m$ can be tested directly, while for smaller radius an indirect evidence can be established.Comment: 14 pages, 5 figures, added conclusion

Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers

We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical crossover in the transport behavior in the $0 - 5$K temperature range, with the low density, low temperature mobility showing a strikingly strong non-monotonic temperature dependence, which may qualitatively explain the recently observed anomalously strong temperature dependent resistivity in low-density, high-mobility MOSFETs.Comment: 5 pages, 2 figures, will appear in PRL (12 July, 1999