Improved high-field reliability for a SiC metal-oxide-semiconductor device by the incorporation of nitrogen into its HfTiO gate dielectric

Materials with high dielectric constant (k) have been used in SiC-based metal-oxide-semiconductor (MOS) devices to reduce the electric field in the gate dielectric and thus suppress a high-field reliability problem. In this work, high- k gate dielectrics Hfx Ti1-x O2 and Hfx Ti1-x ON are applied in SiC MOS devices and an ultrathin thermally grown SiO2 is used as an interlayer between SiC and the high- k materials to block electron injection from SiC into the low-barrier high- k materials. Incorporating nitrogen into the Hf-Ti oxide (by adding nitrogen gas during its sputtering) stacked with a SiO2 interlayer (Hfx Ti1-x O SiO2) results in a better gate dielectric for the MOS capacitor, such as smaller frequency dispersion in the capacitance-voltage curve, less oxide charges, and better interface quality. Moreover, the nitrogen incorporation increases the dielectric constant of the oxide, but causes higher dielectric leakage, which can be suppressed by the SiO2 interlayer. High-field stress under constant electric field is performed on the stacked/nonstacked Hf-Ti oxides and oxynitrides, and it turns out that the two oxynitrides show a much smaller flatband shift and a less stress-induced leakage current compared with the two oxides. Based on these results, the Hfx Ti1-x ON SiO2 stack could be a promising high- k gate dielectric for SiC MOS devices with enhanced reliability. © 2007 American Institute of Physics.published_or_final_versio

Effects of NO annealing and GaOxNy interlayer on GaN metal-insulator-semiconductor capacitor with SiO2 gate dielectric

SiO2 was deposited on GaN by radio-frequency sputtering to fabricate metal-insulator-semiconductor (MIS) capacitors. Before the deposition, an ultrathin GaOx Ny interlayer was thermally grown on the GaN wafer to improve the quality of the insulator/ GaN interface. The interface-trap density at 0.4 eV below the conduction bandedge was reduced by one order compared with that of a sample without the GaOx Ny interlayer. Annealing in NO gas at 800°C was conducted on both samples, and turned out to greatly suppress their oxide charges. The NO -annealed sample with the GaOx Ny interlayer achieved the lowest oxide-charge density of 1.7× 1011 cm-2, as compared to 9.5× 1011 cm-2 for its counterpart without the GaOx Ny interlayer and about 8.0× 1012 cm-2 for the two nonannealed samples. Moreover, the NO annealing was found to effectively reduce border traps. Secondary-ion mass spectrometry analysis was performed to explain how the GaOx Ny interlayer and NO annealing affect the performance of the GaN MIS capacitors. © 2007 The Electrochemical Society.published_or_final_versio

Improved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation

The effects of TCE (trichloroethylene) thermal gate oxidation on the electrical characteristics of SiC MOSFETs are investigated. It is found that TCE thermal gate oxidation can improve the I d-V d characteristics, increase the field-effect mobility, and reduce the threshold voltage and sub-threshold slope of the devices. The better device characteristics are believed to be attributed to the TCE-induced reductions of charges in the gate oxide and traps at the SiO/SiO 2 interface, and also to the gettering of charged impurities and reduction of physical defects by the chlorine incorporated in the gate oxide. ©2005 IEEE.published_or_final_versio

Effect of plant traits and substrate moisture on the thermal performance of different plant species in vertical greenery systems

This study evaluated the effects of plant traits and substrate moisture on the thermal performance of four herbs and four shrubs, which are the most commonly used species in vertical greenery systems (VGSs), in humid subtropical Hong Kong over a one-year period. The canopy temperature reduction on sunny days was significantly correlated with canopy coverage and leaf area index (LAI), but not with daily evapotranspiration (ET). This indicated that the shading effect of VGSs, which is related to canopy coverage and LAI, was more prominent than ET cooling. The lack of significant correlation between substrate moisture, ET and canopy temperature indicated that substrate moisture and ET did not significantly enhance the canopy cooling of VGSs. Substrate moisture notably cooled the substrate on sunny days, and warmed the substrate on rainy days, which significantly affected substrate thermal behavior, but had less effect on canopy air temperature. The use of VGSs with eight common plant species on building envelopes reduced steady-state heat conduction by 18.7–39.8%, with Ficus elastica (rubber fig) causing the greatest canopy cooling

Kinetics of thermal oxidation of 6H silicon carbide in oxygen plus trichloroethylene

In this work, the behaviors of the trichloroethylene (TCE) thermal oxidation of 6H silicon carbide (SiC) are investigated. The oxide growth of 6H SiC under different TCE concentrations (ratios of TCE to O2) follows the linear-parabolic oxidation law derived for silicon oxidation by Deal and Grove, J. Appl. Phys., 36 (1965). The oxidation rate with TCE is much higher than that without TCE and strongly depends on the TCE ratio in addition to oxidation temperature and oxidation time. The increase in oxidation rate induced by TCE is between 2.7 and 67% for a TCE ratio of 0.001-0.2 and a temperature of 1000-1150°C. Generally, the oxidation rate increases quickly with the TCE ratio for a TCE ratio less than 0.05 and then gradually saturates for a ratio larger than 0.05. The activation energy EB/A of the TCE oxidation for the TCE ratio range of 0.001-0.2 is 1.04-1.05 eV, which is a little larger than the 1.02 eV of dry oxidation. A two-step model for the TCE oxidation is also proposed to explain the experimental results. The model points out that in the SiC oxidation with TCE, the products (H2O and Cl2) of the reaction between TCE and O2 can speed up the oxidation, and hence, the oxidation rate is highly sensitive to the TCE ratio. © 2005 The Electrochemical Society. All rights reserved.published_or_final_versio

Effect of lifestyle factors on risk of mortality associated with influenza in elderly people

published_or_final_versio

Conferences in the time of COVID: notes on organizing and delivering the first Brain Conference

To further fulfil their missions of promoting teaching, education and research in neurology and related clinical-academic disciplines, the Guarantors of Brain and the Brain journal family invited delegates to the first Brain Conference in Spring of this year. This event aimed to deliver excellent teaching and scientific presentations across a broad spectrum of neuroscience fields, with the key aim of making the content as accessible as possible. We hoped to capitalize on the benefits of an online format, whilst trying to capture a little of the joy of the in-person meeting. This article reports on the approach and practical choices made to achieve these goals, and we hope this will provide some guidance and advice to others organizing their own online conference

Effect modifications of smoking on risk of mortality associated with influenza

BACKGROUND AND AIMS: Influenza is well known to cause heavy disease burden in both temperate and tropical/subtropical regions. Although smoking has been found to increase susceptibility to influenza infection, its role in modifying the mortality risk associated with influenza remains unexplored. This study examined the effect modifications of cigarette smoking on influenza-associated mortality in a cohort of older …postprin

Characterization and Regulation of the Osmolyte Betaine Synthesizing Enzymes GSMT and SDMT from Halophilic Methanogen Methanohalophilus portucalensis

The halophilic methanoarchaeon Methanohalophilus portucalensis can synthesize the osmolyte betaine de novo in response to extracellular salt stress. Betaine is generated by the stepwise methylation of glycine to form sarcosine, N, N-dimethylglycine and betaine by using S-adenosyl-L-methionine (AdoMet) as the methyl donor. The complete gene cluster of Mpgsmt-sdmt was cloned from Southern hybridization and heterologous expressed in E. coli respectively. The recombinant MpGSMT and MpSDMT both retained their in vivo functional activities in E. coli BL21(DE3)RIL to synthesize and accumulate betaine and conferred elevated survival ability in betaine transport deficient mutant E. coli MKH13 under high salt stress. The dramatic activating effects of sodium and potassium ions on the in vitro methyltransferase activities of MpGSMT, but not MpSDMT or bacterial GSMT and SDMT, revealed that GSMT from halophilic methanoarchaeon possesses novel regulate mechanism in betaine biosynthesis pathway. The circular dichroism spectra showed the fluctuated peaks at 206 nm were detected in the MpGSMT under various concentrations of potassium or sodium ions. This fluctuated difference may cause by a change in the β-turn structure located at the conserved glycine- and sarcosine-binding residue Arg167 of MpGSMT. The analytical ultracentrifugation analysis indicated that the monomer MpGSMT switched to dimeric form increased from 7.6% to 70% with KCl concentration increased from 0 to 2.0 M. The level of potassium and sodium ions may modulate the substrate binding activity of MpGSMT through the conformational change. Additionally, MpGSMT showed a strong end product, betaine, inhibitory effect and was more sensitive to the inhibitor AdoHcy. The above results indicated that the first enzymatic step involved in synthesizing the osmolyte betaine in halophilic archaea, namely, GSMT, may also play a major role in coupling the salt-in and compatible solute (osmolyte) osmoadaptative strategies in halophilic methanogens for adapting to high salt environments

Uncovering regulatory pathways that affect hematopoietic stem cell function using 'genetical genomics'

We combined large-scale mRNA expression analysis and gene mapping to identify genes and loci that control hematopoietic stem cell (HSC) function. We measured mRNA expression levels in purified HSCs isolated from a panel of densely genotyped recombinant inbred mouse strains. We mapped quantitative trait loci (QTLs) associated with variation in expression of thousands of transcripts. By comparing the physical transcript position with the location of the controlling QTL, we identified polymorphic cis-acting stem cell genes. We also identified multiple trans-acting control loci that modify expression of large numbers of genes. These groups of coregulated transcripts identify pathways that specify variation in stem cells. We illustrate this concept with the identification of candidate genes involved with HSC turnover. We compared expression QTLs in HSCs and brain from the same mice and identified both shared and tissue-specific QTLs. Our data are accessible through WebQTL, a web-based interface that allows custom genetic linkage analysis and identification of coregulated transcripts.