Exciton-polariton behaviour in bulk and polycrystalline ZnO

We report detailed reflectance studies of the exciton–polariton structure of thin film polycrystalline ZnO and comparison with bulk crystal behaviour. Near-normal incidence reflectance spectra of these samples are fitted using a two-band dielectric response function. Our data show that the reflectance data in polycrystalline ZnO differ substantially from the bulk material, with Fabry–Perot oscillations at energies below the transverse A exciton and above the longitudinal B exciton in the films. In the strong interaction regime between these energies no evidence is seen of the normally rapid oscillations associated with the anomalous waves. We demonstrate that the strong interaction of the damped exciton with the photon leads to polaritons in this region with substantial damping such that the Fabry–Perot modes are eliminated. Good qualitative agreement is achieved between the model and data. The importance of the polariton model in understanding the reflectance data of polycrystalline material is clearly see

Analysis on reflection spectra in strained ZnO thin films

Thin films of laser molecular-beam epitaxy grown ZnO films were studied with respect to their optical properties. 4-K reflectivity was used to analyze various samples grown at different biaxial in-plane strain. The spectra show two structures at 3.37 eV corresponding to the A-free exciton transition and at 3.38 eV corresponding to the B-free exciton transition. Theoretical reflectivity spectra were calculated using the spatial dispersion model. Thus, the transverse energies, the longitudinal transversal splitting (ELT,), the oscillator strengths, and the damping parameters were determined for both the A- and B-free excitons of ZnO. As a rough trend, the strain dependence of the energy E_LT for the A-excitons is characterized by a negatively-peaking behavior with a minimum around the zero strain, while ELT for the B-excitons is an increasing function of the strain field values.Comment: 4 pages, 2 figures, 1 table, conference: ICMAT2005 (Singapore), to appear in an issue of J. Cryst. Growt

Strong and weak coupling limits in optics of quantum well excitons

A transition between the strong (coherent) and weak (incoherent) coupling limits of resonant interaction between quantum well (QW) excitons and bulk photons is analyzed and quantified as a function of the incoherent damping rate caused by exciton-phonon and exciton-exciton scattering. For confined QW polaritons, a second, anomalous, damping-induced dispersion branch arises and develops with increasing damping. In this case, the strong-weak coupling transition is attributed to a critical damping rate, when the intersection of the normal and damping-induced dispersion branches occurs. For the radiative states of QW excitons, i.e., for radiative QW polaritons, the transition is described as a qualitative change of the photoluminescence spectrum at grazing angles along the QW structure. Furthermore, we show that the radiative corrections to the QW exciton states with in-plane wavevector approaching the photon cone are universally scaled by an energy parameter rather than diverge. The strong-weak coupling transition rates are also proportional to the same energy parameter. The numerical evaluations are given for a GaAs single quantum well with realistic parameters.Comment: Published in Physical Review B. 29 pages, 12 figure

Effect of polycrystallinity on the optical properties of highly oriented ZnO grown by pulsed laser deposition

We report the results of photoluminescence and reflectance measurements on highly c-axis oriented polycrystalline ZnO grown by pulsed laser deposition. The samples measured were grown under identical conditions and were annealed in-situ at various temperatures for 10-15 min. The band-edge photoluminescence spectra of the material altered considerably with an increase in grain size, with increased free exciton emission and observable excitonic structure in the reflectance spectra. The green band emission also increased with increasing grain size. A deformation potential analysis of the effect of strain on the exciton energy positions of the A- and B-excitons demonstrated that the experimental exciton energies could not be explained solely in terms of sample strain. We propose that electric fields in the samples due to charge trapping at grain boundaries are responsible for the additional perturbation of the excitons. This interpretation is supported by theoretical estimates of the exciton energy perturbation due to electric fields. The behaviour of the green band in the samples provides additional evidence in favour of our model

Long delays of light in ZnO caused by exciton-polariton propagation

We study the propagation of exciton-polaritons through bulk ZnO using time-resolved photoluminescence (PL) complemented by time-of-flight measurements of laser pulses. When the photon energy approaches donor bound exciton resonances, substantial time delays in PL light propagation are observed which reach up to 210 ps for a 0.55 mm thick crystal. By comparing results from time-of-flight measurements performed using PL light and laser pulses, the observed delay is shown to be due to the formation of exciton-polaritons and their spectral dispersion. It is also shown that the main contribution to the slow-down effect arises from free exciton-polaritons, whereas bound exciton-polaritons become important only in close vicinity to the corresponding resonances