58 research outputs found
Vanishing Fe 3d orbital moments in single-crystalline magnetite
We show detailed magnetic absorption spectroscopy results of an in situ
cleaved high quality single crystal of magnetite. In addition the experimental
setup was carefully optimized to reduce drift, self absorption, and offset
phenomena as far as possible. In strong contradiction to recently published
data, our observed orbital moments are nearly vanishing and the spin moments
are quite close to the integer values proposed by theory. This very important
issue supports the half metallic full spin polarized picture of magnetite.Comment: 7 pages, 4 figure
Hysteresis of Electronic Transport in Graphene Transistors
Graphene field effect transistors commonly comprise graphene flakes lying on
SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis
depending on the gate sweeping rate/range. It is shown here that the
transistors exhibit two different kinds of hysteresis in their electrical
characteristics. Charge transfer causes a positive shift in the gate voltage of
the minimum conductance, while capacitive gating can cause the negative shift
of conductance with respect to gate voltage. The positive hysteretic phenomena
decay with an increase of the number of layers in graphene flakes. Self-heating
in helium atmosphere significantly removes adsorbates and reduces positive
hysteresis. We also observed negative hysteresis in graphene devices at low
temperature. It is also found that an ice layer on/under graphene has much
stronger dipole moment than a water layer does. Mobile ions in the electrolyte
gate and a polarity switch in the ferroelectric gate could also cause negative
hysteresis in graphene transistors. These findings improved our understanding
of the electrical response of graphene to its surroundings. The unique
sensitivity to environment and related phenomena in graphene deserve further
studies on nonvolatile memory, electrostatic detection and chemically driven
applications.Comment: 13 pages, 6 Figure
High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants
The unique property of bilayer graphene to show a band gap tunable by
external electrical fields enables a variety of different device concepts with
novel functionalities for electronic, optoelectronic and sensor applications.
So far the operation of bilayer graphene based field effect transistors
requires two individual gates to vary the channel's conductance and to create a
band gap. In this paper we report on a method to increase the on/off ratio in
single gated bilayer graphene field effect transistors by adsorbate doping. The
adsorbate dopants on the upper side of the graphene establish a displacement
field perpendicular to the graphene surface breaking the inversion symmetry of
the two graphene layers. Low temperature measurements indicate, that the
increased on/off ratio is caused by the opening of a mobility gap. Beside field
effect transistors the presented approach can also be employed for other
bilayer graphene based devices like photodetectors for THz to infrared
radiation, chemical sensors and in more sophisticated structures such as
antidot- or superlattices where an artificial potential landscape has to be
created.Comment: 4 pages, 4 figure
Water-Gated Charge Doping of Graphene Induced by Mica Substrates
We report on the existence of water-gated charge doping of graphene deposited
on atomically flat mica substrates. Molecular films of water in units of ~0.4
nm-thick bilayers were found to be present in regions of the interface of
graphene/mica hetero-stacks prepared by micromechanical exfoliation of kish
graphite. The spectral variation of the G and 2D bands, as visualized by Raman
mapping, shows that mica substrates induce strong p-type doping in graphene,
with hole densities of {-2}$. The ultrathin water
films, however, effectively block interfacial charge transfer, rendering
graphene significantly less hole-doped. Scanning Kelvin probe microscopy
independently confirmed a water-gated modulation of the Fermi level by 0.35 eV,
in agreement with the optically determined hole density. The manipulation of
the electronic properties of graphene demonstrated in this study should serve
as a useful tool in realizing future graphene applications.Comment: 15 pages, 4 figures; Nano Letters, accepted (2012
Electric double-layer capacitance between an ionic liquid and few-layer graphene
Ionic-liquid gates have a high carrier density due to their atomically thin electric double layer (EDL) and extremely large geometrical capacitance C-g. However, a high carrier density in graphene has not been achieved even with ionic-liquid gates because the EDL capacitance C-EDL between the ionic liquid and graphene involves the series connection of C-g and the quantum capacitance C-q, which is proportional to the density of states. We investigated the variables that determine C-EDL at the molecular level by varying the number of graphene layers n and thereby optimising C-q. The C-EDL value is governed by C-q at n, 4, and by C-g at n > 4. This transition with n indicates a composite nature for C-EDL. Our finding clarifies a universal principle that determines capacitance on a microscopic scale, and provides nanotechnological perspectives on charge accumulation and energy storage using an ultimately thin capacitor
Boron nitride substrates for high-quality graphene electronics
Graphene devices on standard SiO2 substrates are highly disordered,
exhibiting characteristics far inferior to the expected intrinsic properties of
graphene[1-12]. While suspending graphene above the substrate yields
substantial improvement in device quality[13,14], this geometry imposes severe
limitations on device architecture and functionality. Realization of
suspended-like sample quality in a substrate supported geometry is essential to
the future progress of graphene technology. In this Letter, we report the
fabrication and characterization of high quality exfoliated mono- and bilayer
graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN)
substrates, by a mechanical transfer process. Variable-temperature
magnetotransport measurements demonstrate that graphene devices on h-BN exhibit
enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping
in comparison with SiO2-supported devices. The ability to assemble crystalline
layered materials in a controlled way sets the stage for new advancements in
graphene electronics and enables realization of more complex graphene
heterostructres.Comment: 20 pages (includes supplementary info), 7 figure
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