High-efficiency, radiation-resistant GaAs space cells

Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradation after radiation are available, particularly for cells with efficiencies exceeding 20 percent (one-sun, AMO). Often the cell performance is optimized for the highest beginning-of-life (BOL) efficiency, despite the unknown effect of such design on end-of-life (EOL) efficiencies. The results of a study of the radiation effects on p-n GaAs cells are presented. The EOL efficiency of GaAs space cell can be increased by adjusting materials growth parameters, resulting in a demonstration of 16 percent EOL efficiency at one-sun, AMO. Reducing base doping levels to below 3 x 10(exp 17)/cu m and decreasing emitter thickness to 0.3 to 0.5 micron for p-n cells led to significant improvements in radiation hardness as measured by EOL/BOL efficiency ratios for irradiation of 10(exp -15)/sq cm electrons at 1 MeV. BOL efficiency was not affected by changes in emitter thickness but did improve with lower base doping

Publication trends in global biodiversity research on protected areas

One of the main strategies to reduce the global loss of biodiversity has been the establishment of protected areas (PAs). High quality biodiversity knowledge is essential to successfully design PAs and PA networks, and to assess their conservation effectiveness. However, biodiversity knowledge is taxonomically and geographically biased. Even though PAs are typically more intensively surveyed than surrounding landscapes, they cannot avoid biodiversity knowledge shortfalls and biases. To investigate this, we performed a systematic literature review to assess publication trends in global biodiversity research taking place in PAs. Our data indicate that animals are more studied than plants, with vertebrates overrepresented in relation to invertebrates. Biodiversity in PAs has been mainly measured taxonomically (species richness or species diversity), while functional and phylogenetic diversity have rarely been considered. Finally, as predicted, there was a geographic bias towards European and USA terrestrial protected areas. These observed trends mirror more general studies of biodiversity knowledge shortfalls and could have direct negative consequences for conservation policy and practice. Reducing these biases and shortfalls is essential for more effective use of limited conservation resourcesSLC was supported by a FPI predoctoral grant financed by the Autonoma ´ University of Madrid. RJL was supported via the European Union’s Horizon 2020 research and innovation programme under grant agreement No 854248. AMCS was supported by the Ramon ´ y Cajal program (RYC2020-029407-I), financed by the Spanish Ministerio de Ciencia e Innovacio

Recent advancements in monolithic AlGaAs/GaAs solar cells for space applications

High efficiency, two terminal, multijunction AlGaAs/GaAs solar cells were reproducibly made with areas of 0.5 sq cm. The multiple layers in the cells were grown by Organo Metallic Vapor Phase Epitaxy (OMVPE) on GaAs substrates in the n-p configuration. The upper AlGaAs cell has a bandgap of 1.93 eV and is connected in series to the lower GaAs cell (1.4 eV) via a metal interconnect deposited during post-growth processing. A prismatic coverglass is installed on top of the cell to reduce obscuration caused by the gridlines. The best 0.5 sq cm cell has a two terminal efficiency of 23.0 pct. at 1 sun, air mass zero (AM0) and 25 C. To date, over 300 of these cells were grown and processed for a manufacturing demonstration. Yield and efficiency data for this demonstration are presented. As a first step toward the goal of a 30 pct. efficient cell, a mechanical stack of the 0.5 sq cm cells described above, and InGaAsP (0.95 eV) solar cells was made. The best two terminal measurement to date yields an efficiency of 25.2 pct. AM0. This is the highest reported efficiency of any two terminal, 1 sun space solar cell

The 25 percent-efficient GaAs Cassegrainian concentrator cell

Very high-efficiency GaAs Cassegrainian solar cells have been fabricated in both the n-p and p-n configurations. The n-p configuration exhibits the highest efficiency at concentration, the best cells having an efficiency eta of 24.5 percent (100X, AM0, temperature T = 28 C). Although the cells are designed for operation at this concentration, peak efficiency is observed near 300 suns (eta = 25.1 percent). To our knowledge, this is the highest reported solar cell efficiency for space applications. The improvement in efficiency over that reported at the previous SPRAT conference is attributed primarily to lower series resistance and improved grid-line plating procedures. Using previously measured temperature coefficients, researchers estimate that the n-p GaAs cells should deliver approximately 22.5 percent efficiency at the operating conditions of 100 suns and T = 80 C. This performance exceeds the NASA program goal of 22 percent for the Cassegrainian cell. One hundred Cassegrainian cells have been sent to NASA as deliverables, sixty-eight in the n-p configuration and thirty-two in the p-n configuration

Progress toward a 30 percent-efficient, monolithic, three-junction, two-terminal concentrator solar cell for space applications

Component efficiencies of 0.2/sq cm cells at approximately 100x AMO light concentration and 80 C temperatures are not at 15.3 percent for a 1.9 eV AlGaAs top cell, 9.9 percent for a 1.4 eV GaAs middle cell under a 1.9 eV AlGaAs filter, and 2.4 percent for a bottom 1.0 eV InGaAs cell under a GaAs substrate. The goal is to continue improvement in these performance levels and to sequentially grow these devices on a single substrate to give 30 percent efficient, monolithic, two-terminal, three-junction space concentrator cells. The broad objective is a 30 percent efficient monolithic two-terminal cell that can operate under 25 to 100x AMO light concentrations and at 75 to 100 C cell temperatures. Detailed modeling predicts that this requires three junctions. Two options are being pursued, and both use a 1.9 eV AlGaAs top junction and a 1.4 eV GaAs middle junction grown by a 1 atm OMVPE on a lattice matched substrate. Option 1 uses a low-doped GaAs substrate with a lattice mismatched 1.0 eV InGaAs cell formed on the back of the substrate. Option 2 uses a Ge substrate to which the AlGaAs and GaAs top junctions are lattice matched, with a bottom 0.7 eV Ge junction formed near the substrate interface with the GaAs growth. The projected efficiency contributions are near 16, 11, and 3 percent, respectively, from the top, middle, and bottom junctions