Interpregnancy interval following miscarriage and adverse pregnancy outcomes : systematic review and meta-analysis

Funding This research project did not receive any funding.Peer reviewedPostprin

Energy quantization in solution-processed layers of indium oxide and their application in resonant tunneling diodes

\u3cp\u3eThe formation of quantized energy states in ultrathin layers of indium oxide (In\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e) grown via spin coating and thermally annealed at 200°C in air is studied. Optical absorption measurements reveal a characteristic widening of the optical band gap with reducing In\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e layer thickness from ≈43 to ≈3 nm in agreement with theoretical predictions for an infinite quantum well. Through sequential deposition of In\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e and gallium oxide (Ga\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e) layers, superlattice-like structures with controlled dimensionality and spatially varying conduction band characteristics are demonstrated. This simple method is then explored for the fabrication of functional double-barrier resonant tunneling diodes. Nanoscale current mapping analysis using conductive atomic force microscopy reveals that resonant tunneling is not uniform but localized in specific regions of the apparent device area. The latter observation is attributed to variation in the layer(s) thickness of the In\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e quantum well and/or the Ga\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e barrier layers. Despite the nonidealities, the tremendous potential of solution-processable oxide semiconductors for the development of quantum effect devices that have so far been demonstrated only via sophisticated growth techniques is demonstrated.\u3c/p\u3

Ambipolar Organic Transistors for Opto-Electronic Applications

This thesis is concerned with the development and study of ambipolar organic field-effect transistors (OFETs), with a specific focus on devices and structures that are relevant to opto-electronic processes. After giving an outline of the relevant theory and experimental methods, the thesis is divided into three experimental chapters. In the chapter on organic phototransistors (OPTs), the fabrication of low-voltage bilayer OPTs is carried out using self-assembled monolayer gate dielectrics. By combining two low-voltage OPTs, the output voltage of a so-called photo-inverter was observed to be modulated over a range of 1.5 V with an incident optical power density of 0 to 1.2 mWcm-2. The characteristics of a high-voltage polymer:fullerene blend photo-inverter device are modelled using variable-range hopping and simple circuit models, suggesting that the device operation is dominated by changes in the threshold voltage. In the second experimental chapter the relationship between the morphology of polymer:fullerene blends and the characteristics of OFETs is studied. It is shown that the thermally-induced clustering of fullerenes is manifest as a reduction in electron mobility, due to a reduction in percolating pathways. It is additionally found that higher molecularweight fullerenes require greater annealing temperature and/or times for this process to occur. The final experimental chapter is concerned with polymer:fullerene diffusion processes and the study of such phenomena using bilayer OFETs. A model based upon the diffusion equation and percolation theory is employed to quantify this process. Again, higher molecularweight fullerenes are observed to require greater annealing temperature for similar phenomena to be observed

Operating Principles of Zero-Bias Retinomorphic Sensors

Zero bias retinomorphic sensors (ZBRSs) are a new type of optical sensor which produce a signal in response to changes in light intensity, but not to constant illumination. For this reason, they are hoped to enable much faster identification of moving objects than conventional sensing strategies. While recent proof-of-principle experimental demonstrations are significant, there does not yet exist a robust quantitative model for their behaviour, which represents an impediment for effective progress to be made in this field. Here I report a mathematical framework to quantify and predict the behaviour of ZRBSs. A simple device-level model and a more detailed carrier-dynamics model are derived. Both models are tested computationally, yielding equivalent behaviour consistent with experimental observations. A figure of merit, Λ_0, was identified which is hoped to enable facile comparison of devices between different research groups. This work is hoped to serve as the foundation for a consistent description of ZBRSs

High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensional polycrystalline heterojunctions and quasi‐superlattices (QSLs) consisting of alternating layers of In(2)O(3), Ga(2)O(3,) and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band‐like transport with electron mobilities approximately a tenfold greater (25–45 cm(2) V(−1) s(−1)) than single oxide devices (typically 2–5 cm(2) V(−1) s(−1)). Based on temperature‐dependent electron transport and capacitance‐voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas‐like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll‐to‐roll, etc.) and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement

The effect of substrate curvature on capacitance and transfer characteristics for thin film transistors on the surface of spheres

Conformable, flexible, and stretchable thin film transistors hold promise for ubiquitous and low-cost electronics. As part of the research endeavor toward this goal, the challenges associated with compatible materials and growth processes have been intensely studied. What is seldom considered, however, is how device electrostatics change as the physical form of devices change. In this report, we study how one would expect the current–voltage characteristics of thin film transistors to change as they are deformed on the surface of a sphere. We derive analogous equations to those derived in the gradual channel approximation to relate current to applied voltage for various spherical geometries. Combined with a finite-difference strategy to evaluate geometric capacitance, example current–voltage characteristics are calculated. The results demonstrate for certain deformations in this geometry, the behavior deviates from what one would expect using just the gradual channel approximation. For flexible electronics to be commercially viable, it must be predictable in any physical form. These results represent some of the first steps in a broader effort to quantify the relationship between device geometry and electrical behavior

Role of blend ratio in bulk heterojunction organic retinomorphic sensors

Conventional image sensors are designed to digitally reproduce every aspect of the visual field; in general representing brighter regions of a scene as brighter regions in an image. While the benefits of detecting and representing light in this way are obvious, limitations imposed by processing power and frame rate place a cap on the speed at which moving objects can be identified. An emerging alternative strategy is to use sensors which output a signal only in response to changes in light intensity, hence inherently identifying movement by design. These so-called retinomorphic sensors are hoped to outperform conventional sensors for certain tasks, such as identification of moving objects. In this report, the working mechanism of retinomorphic sensors based on organic semiconductors as the active layer is probed. It is observed that the sign of the voltage signal is changed when electrode connections are reversed, suggesting our previous description of device behaviour was incomplete. By systematically varying the ratio of poly(3-hexylthiophene-2,5-diyl) (P3HT) to phenyl-C61-butyric acid methyl (PCBM) in the absorption layer, a maximum performance was observed when the ratio was 1 : 2 P3HT : PCBM, while pure P3HT and pure PCBM exhibited very weak signals

Self-assembly and charge transport properties of a benzobisthiazole end-capped with dihexylthienothiophene units

The synthesis of a new conjugated material is reported; BDHTT–BBT features a central electron-deficient benzobisthiazole capped with two 3,6-dihexyl-thieno[3,2-b]thiophenes. Cyclic voltammetry was used to determine the HOMO (−5.7 eV) and LUMO (−2.9 eV) levels. The solid-state properties of the compound were investigated by X-ray diffraction on single-crystal and thin-film samples. OFETs were constructed with vacuum deposited films of BDHTT–BBT. The films displayed phase transitions over a range of temperatures and the morphology of the films affected the charge transport properties of the films. The maximum hole mobility observed from bottom-contact, top-gate devices was 3 × 10−3 cm2 V−1 s−1, with an on/off ratio of 104–105 and a threshold voltage of −42 V. The morphological and self-assembly characteristics versus electronic properties are discussed for future improvement of OFET devices

Role of A‐Site Composition in Charge Transport in Lead Iodide Perovskites

As the power conversion efficiency and stability of solar cells based on metal halide perovskites continue to improve, the community increasingly relies on compounds formed of mixed cations and mixed halides for the highest performing devices. The result is that device engineers now have a potentially infinite number of compositions to choose from. While this has provided a large scope for optimization, it has increased complexity of the field, and the rationale for choosing one composition over another remains somewhat empirical. Herein, the distribution of electronic properties for a range of lead iodide perovskite thin films is mapped. The relative percentages of methylammonium, formamidinium, and cesium are varied, and the electronic properties are measured with time-resolved microwave conductivity, a contactless technique enabling extraction of electronic properties of isolated films of semiconductors. It is found a small amount of Cs leads to larger carrier mobilities and longer carrier lifetimes and that compositions with a tolerance factor close to 0.9 generally show lower performance that those closer to 0.8 or 1.0

Endothelin-1 mediates Aspergillus fumigatus induced airway inflammation and remodelling

BACKGROUND: Asthma is a chronic inflammatory condition of the airways and patients sensitised to airborne fungi such as Aspergillus fumigatus have more severe asthma. Thickening of the bronchial subepithelial layer is a contributing factor to asthma severity for which no current treatment exists. Airway epithelium acts as an initial defence barrier to inhaled spores, orchestrating an inflammatory response and contributing to subepithelial fibrosis. OBJECTIVE: We aimed to analyse the production of profibrogenic factors by airway epithelium in response to A. fumigatus, in order to propose novel anti-fibrotic strategies for fungal-induced asthma. METHODS: We assessed the induction of key profibrogenic factors, TGFβ1, TGFβ2, periostin and endothelin-1, by human airway epithelial cells and in mice exposed to A. fumigatus spores or secreted fungal factors. RESULTS: A. fumigatus specifically caused production of endothelin-1 by epithelial cells in vitro but not any of the other profibrogenic factors assessed. A. fumigatus also induced endothelin-1 in murine lungs, associated with extensive inflammation and airway wall remodelling. Using a selective endothelin-1 receptor antagonist, we demonstrated for the first time, that endothelin-1 drives many features of airway wall remodelling and inflammation elicited by A. fumigatus. CONCLUSION: Our findings are consistent with the hypothesis that elevated endothelin-1 levels contribute to subepithelial thickening and highlight this factor as a possible therapeutic target for difficult-to-treat fungal-induced asthma