Ingaas/inp Quantum Wells With Thickness Modulation

We investigated the optical properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy on top of patterned InP buffer layers with elongated features along the [01̄1] direction. The resulting quantum wells present a periodic thickness variation following the elongated features. Low temperature luminescence measurements exhibit double emission bands, attributed to distinct regions of the well. Temperature evolution of the photoluminescence spectra gives qualitative information about the effect of exciton localization.65785785

Temperature Dependence Of Morphology Of Inp Films Grown By Metalorganic Molecular Beam Epitaxy

Two regimes of growth are observed for epitaxial films of InP prepared by metalorganic molecular beam epitaxy. Below a minimum growth temperature, Tg min, kinetic roughening is observed. At temperatures higher than Tg min, smooth morphologies are obtained. From the dependence of Tg min, on the substrate misorientation, we estimate a value of nearly 0.4-0.5 eV for the Schwoebel barrier. At growth temperatures higher than Tg min we observe two types of defects: large oval defects related only to the initial conditions of the substrate surface and small defects with the density strongly dependent on the growth condition. Increasing temperature above Tg min, or decreasing V/III ratio, results in increased density of these defects. In addition, their density increases with an activation energy that depends on the substrate misorientation. The origin of the oval defects in attributed to non-stoichiometric, P-defficient, clusters on the growing surface, formed either by enhanced cracking of metalorganics on the substrate due to the presence of contamination or by a low V/III ratio used for growth.31712312

Kinetic Roughening In Molecular Beam Epitaxy Of Inp

An abrupt transition in the growth mode is observed for epitaxial films of InP prepared by metalorganic molecular beam epitaxy. Below a minimum growth temperature, Tg min, three-dimensional growth and kinetically controlled roughening are observed, with surface roughness showing two distinc power law regimes dependent on film thickness. The observed roughening is attributed to the presence of a Schwoebel-Erlich-type barrier to adatom motion across surface steps. From the dependence of Tg min on the substrate misorientation, we are able to estimate an upper limit of 0.4-0.5 eV for this barrier. At temperatures higher than Tg min, we observe smooth morphologies with the concurrent formation of localized defects associated with P-vacancies. The density of defects is strongly dependent on the thermodynamic and kinetic growth parameters.2617582Schwoebel, R.L., Shipsey, E.J., (1966) J. Appl. Phys., 37, p. 3682Erlich, G., Hudda, F.G., (1966) J. Chem. Phys., 44, p. 1039Fink, H.W., Erlich, G., (1984) Surf. Sci., 143, p. 125Amar, J.G., Family, F., (1990) Phys. Rev. A, 41, p. 3399Family, F., Vicsek, T., (1985) J. Phys., A18, pp. L75Kertész, J., Wolf, D.E., (1988) J. Phys. A, 21, p. 747Kardar, M., Parisi, G., Zhang, Y., (1986) Phys. Rev. Lett., 56, p. 889Chevrier, J., LeThanh, V., Buys, R., Derrien, J., (1991) Europhys. Lett., 16, p. 732Mo, Y.-W., Swartzentruber, B.S., Kariotis, R., Webb, M.B., Lagally, M.G., (1989) Phys. Rev. Lett., 63, p. 2393Mo, Y.-W., Kleiner, J., Webb, M.B., Lagally, M.G., (1991) Phys. Rev. Lett., 66, p. 1998Eaglesham, D.J., Gossman, H.-J., Cerullo, M., (1990) Phys. Rev. Lett., 65, p. 1227Das Sarma, S., Tamborenea, P.I., (1992) Phys. Rev.B, 46, p. 1925Kessler, D.A., Levine, H., Sander, L.M., (1992) Phys. Rev. Lett., 69, p. 100Das Sarma, S., Tamborenea, P., (1991) Phys. Rev. Lett., 66, p. 325Wolf, D., Villain, J., (1990) Europhys. Lett., 13, p. 389Cotta, M.A., Hamm, R.A., Staley, T.W., Chu, S.N.G., Harriott, L.R., Panish, M.B., Temkin, H., (1993) Appl. Phys. Lett., 70, p. 4106Gotta, M.A., Hamm, R.A., Chu, S.N.G., Harriott, L.R., Temkin, H., (1995) Appl. Phys. Lett., 66Hamm, R.A., Ritter, D., Temkin, H., Panish, M.B., Vandenberg, J.M., Yadvish, R.D., (1991) Appl. Phys. Lett., 59, p. 1893Garcia, J.Ch., Maurel, Ph., Bove, Ph., Hirtz, J.P., (1991) J. Appl. Phys., 69, p. 3297Hata, M., Watanabe, A., Isu, T., (1991) J. Cryst. Growth, 111, p. 83Ghaisas, S.V., Das Sarma, S., (1992) Phys. Rev.B, 46, p. 7308Neave, J.H., Dobson, P.J., Joyce, B.A., Zhang, J., (1985) Appl. Phys. Lett., 47, p. 100Shitara, T., Vvedensky, D.D., Wilby, M.R., Zhang, J., Neave, J.H., Joyce, B.A., (1992) Phys. Rev. B, 46, p. 6825Tsao, J.Y., (1993) Materials Fundamentals of Molecular Beam Epitaxy, p. 211. , Academic Press, BostonJoyce, B.A., (1994) Critical Issues in Epitaxy Workshop, , Boulder, CO, USA, June 24-26Pashley, M.D., Haberern, K.W., Gaines, J.M., (1991) Appl. Phys. Lett., 58, p. 406Ohta, K., Kojima, T., Nakagawa, T., (1989) J. Cryst. Growth, 95, p. 71Ohno, T., Shiraishi, K., Ito, T., 1993 Materials Research Society Fall Meeting, , Boston, MA, USA, SympPanish, M.B., Temkin, H., (1993) Gas Source Molecular Beam Epitaxy, pp. 23-24. , Springer Verlag, BerlinJohnson, M.D., Orme, C., Hunt, A.W., Graff, D., Sudijono, J., Sander, L.M., Orr, B.G., (1994) Phys. Rev. Lett., 72, p. 116Chand, N., Chu, S.N.G., (1990) J. Cryst. Growth, 104, p. 485Khulbe, P.K., Dobal, P.S., Bist, H.D., Mehta, S.K., Muralidharan, R., Jain, R.K., (1993) Appl. Phys. Lett., 63, p. 488Lambert, M., Pèralés, A., Vergnaud, R., Stark, C., (1990) J. Cryst. Growth, 105, p. 97Morishita, Y., Maruno, S., Gotoda, M., Nomura, Y., Ogata, H., (1989) J. Cryst. Growth, 95, p. 17

Kinetic Roughness In Epitaxy (experimental)

Different regimes of growth morphology are observed for InP films prepared by metal-organic molecular beam epitaxy. Below a well-defined minimum growth temperature Tg min kinetic roughening is observed. From the temperature dependence of roughening near Tg min for substrates with different misorientations we estimate a value of 0.4-0.5 eV for the Schwoebel-Erlich step crossing barrier. At growth temperatures higher than Tg min we observe the formation of localized surface defects associated with vacancies. The density of defects is strongly dependent on the thermodynamic and kinetic growth parameters. © 1995.302-3137142Neave, Dobson, Joyce, Zhang, (1985) Appl. Phys. Lett., 47, p. 100Shitara, Vvedensky, Wilby, Zhang, Neave, Joyce, (1992) Phys. Rev. B, 46, p. 6825Schwoebel, Shipsey, (1966) J. Appl. Phys., 37, p. 3682Erlich, Hudda, Atomic View of Surface Self-Diffusion: Tungsten on Tungsten (1966) The Journal of Chemical Physics, 44, p. 1039Fink, Erlich, (1984) Surf. Sci., 143, p. 125Cotta, Hamm, Staley, Chu, Harriott, Panish, Temkin, (1993) Phys. Rev. Lett., 70, p. 4106Johnson, Orme, Hunt, Graff, Sudijono, Sander, Orr, (1994) Phys. Rev. Lett., 72, p. 116Fukui, Saito, Natural Superstep Formed on GaAs Vicinal Surface by Metalorganic Chemical Vapor Deposition (1990) Japanese Journal of Applied Physics, 29, p. L483Kasu, Kobayashi, (1993) Appl. Phys. Lett., 62, p. 1262Ohta, Kojima, Nakagawa, (1989) J. Cryst. Growth, 95, p. 71T. Ohno, K. Shiraishi and T. Ito, 1993 Materials Research Society Fall Meet., Symp. MPashley, Haberern, Gaines, (1991) Appl. Phys. Lett., 58, p. 406Panish, Temkin, (1993) Gas-Source Molecular Beam Epitaxy, pp. 23-24. , Springer, BerlinChand, Chu, (1990) J. Cryst. Growth, 104, p. 485Khulbe, Dobal, Bist, Mehta, Muralidharan, Jain, (1993) Appl. Phys. Lett., 63, p. 488Lambert, Pèralés, Vergnaud, Stark, (1990) J. Cryst. Growth, 105, p. 97Morishita, Maruno, Gotoda, Nomura, Ogata, (1989) J. Cryst. Growth, 95, p. 176das Sarma, Lanczychi, Ghaisas, Kim, (1994) Phys. Rev. B, 49, p. 1069

Ingaas/inp Quantum Wells With Periodic Thickness Variation

We investigated the optical and structural properties of lattice-matched InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy. The growth conditions were chosen to provide a patterned InP buffer layer surface with elongated features aligned in the [011] direction. The morphology of the patterned surface was revealed by transmission electron and scanning force microscopy measurements. Low temperature photoluminescence results are correlated with teh structural properties of the samples. The observation of multiple emission lines indicates the presence of elongated terraces with different thicknesses at the interface of the single quantum well. Information about the carrier dynamics between these elongated terraces is obtained from the photoluminescence temperature dependence. © 1994.374-6653656M.A. Cotta, R.A. Hamm, T.W. Staley, S.N. Chu, L.R. Harriott, M.B. Panish and H. Temkin, Phys. Rev. Lett. In pressKash, (1990) J. Lumin., 46, p. 69Lang, Panish, Capasso, Allan, Hamm, Sergent, Tsang, (1987) Appl. Phys. Lett., 50, p. 736Kawanishi, Ikeda, (1991) Japan. J. appl. Phys., 30, p. 27Fujiwara, Kanmoto, Tsukada, (1989) Phys. Rev. B, 40, p. 9698Bacher, Kovac, Streubel, Schweizer, Scholz, (1992) Phys. Rev. B, 45, p. 9136Liu, Nilsson, Samuelson, Seifert, Souza, (1993) Phys. Rev. B, 47, p. 2203Hegarty, Goldner, Sturge, (1984) Phys. Rev. B, 30, p. 7346Bastard, Delalende, Meynadier, Frijlink, Voos, (1984) Phys. Rev. B, 29, p. 704