214 research outputs found
Thermopower in the Coulomb blockade regime for Laughlin quantum dots
Using the conformal field theory partition function of a Coulomb-blockaded
quantum dot, constructed by two quantum point contacts in a Laughlin quantum
Hall bar, we derive the finite-temperature thermodynamic expression for the
thermopower in the linear-response regime. The low-temperature results for the
thermopower are compared to those for the conductance and their capability to
reveal the structure of the single-electron spectrum in the quantum dot is
analyzed.Comment: 11 pages, 3 figures, Proceedings of the 10-th International Workshop
"Lie Theory and Its Applications in Physics", 17-23 June 2013, Varna,
Bulgari
Submergence of the Sidebands in the Photon-assisted Tunneling through a Quantum Dot Weakly Coupled to Luttinger Liquid Leads
We study theoretically the photon-assisted tunneling through a quantum dot
weakly coupled to Luttinger liquids (LL) leads, and find that the zero bias dc
conductance is strongly affected by the interactions in the LL leads. In
comparison with the system with Fermi liquid (FL) leads, the sideband peaks of
the dc conductance become blurring for 1/2<g<1, and finally merge into the
central peak for g<1/2, (g is the interaction parameter in the LL leads). The
sidebands are suppressed for LL leads with Coulomb interactions strong enough,
and the conductance always appears as a single peak for any strength and
frequency of the external time-dependent field. Furthermore, the quenching
effect of the central peak for the FL case does not exist for g<1/2.Comment: 9 pages, 4 figure
Electron Transport through Single and Multiple Quantum Dots:The Formation of a One-Dimensional Bandstructure
We describe transport experiments performed on ballistic submicron devices which are defined in the two dimensional electron gas of GaAs/AlGaAs heterostructures by means of metallic gates. Conductance measurements on single quantum dots reveal the formation of magnetically induced zero-dimensional (0D) states. In an array of 15 coupled quantum dots, these 0D-states develop into a 1D bandstructure
Electronic States in Silicon Quantum Dots: Multivalley Artificial Atoms
Electronic states in silicon quantum dots are examined theoretically, taking
into account a multivalley structure of the conduction band. We find that (i)
exchange interaction hardly works between electrons in different valleys. In
consequence electrons occupy the lowest level in different valleys in the
absence of Hund's coupling when the dot size is less than 10 nm. High-spin
states are easily realized by applying a small magnetic field. (ii) When the
dot size is much larger, the electron-electron interaction becomes relevant in
determining the electronic states. Electrons are accommodated in a valley,
making the highest spin, to gain the exchange energy. (iii) In the presence of
intervalley scattering, degenerate levels in different valleys are split. This
could result in low-spin states. These spin states in multivalley artificial
atoms can be observed by looking at the magnetic-field dependence of peak
positions in the Coulomb oscillation.Comment: 18 pages, 5 figure
Magnetoconductance of two point contacts in series
Wetensch. publicatieFaculteit der Wiskunde en Natuurwetenschappe
Competing mechanisms for singlet-triplet transition in artificial molecules
We study the magnetic field induced singlet/triplet transition for two
electrons in vertically coupled quantum dots by exact diagonalization of the
Coulomb interaction. We identify the different mechanisms occurring in the
transition, involving either in-plane correlations or localization in opposite
dots, depending on the field direction. Therefore, both spin and orbital
degrees of freedom can be manipulated by field strength and direction. The
phase diagram of realistic devices is determined.Comment: To appear in Phys. Rev. B - Rapid Comm. - 5 pages, 3 figure
Quantized charge transport through a static quantum dot using a surface acoustic wave
We present a detailed study of the surface acoustic wave mediated quantized
transport of electrons through a split gate device containing an impurity
potential defined quantum dot within the split gate channel. A new regime of
quantized transport is observed at low RF powers where the surface acoustic
wave amplitude is comparable to the quantum dot charging energy. In this regime
resonant transport through the single-electron dot state occurs which we
interpret as turnstile-like operation in which the traveling wave amplitude
modulates the entrance and exit barriers of the quantum dot in a cyclic fashion
at GHz frequencies. For high RF powers, where the amplitude of the surface
acoustic wave is much larger than the quantum dot energies, the quantized
acoustoelectric current transport shows behavior consistent with previously
reported results. However, in this regime, the number of quantized current
plateaus observed and the plateau widths are determined by the properties of
the quantum dot, demonstrating that the microscopic detail of the potential
landscape in the split gate channel has a profound influence on the quantized
acoustoelectric current transport.Comment: 9 page
Nucleus-mediated spin-flip transitions in GaAs quantum dots
Spin-flip rates in GaAs quantum dots can be quite slow, thus opening up the
possibilities to manipulate spin states in the dots. We present here
estimations of inelastic spin-flip rates mediated by hyperfine interaction with
nuclei. Under general assumptions the nucleus mediated rate is proportional to
the phonon relaxation rate for the corresponding non-spin-flip transitions. The
rate can be accelerated in the vicinity of a singlet-triplet excited states
crossing. The small proportionality coefficient depends inversely on the number
of nuclei in the quantum dot. We compare our results with known mechanisms of
spin-flip in quantum dot.Comment: RevTex 4 pages, 1 figure, submitted to Phys. Rev.
Coherent resonant tunneling in ac fields
We have analyzed the tunneling transmission probability and electronic
current density through resonant heterostructures in the presence of an
external electromagnetic field. In this work, we compare two different models
for a double barrier : In the first case the effect of the external field is
taken into account by spatially dependent AC voltages and in the second one the
electromagnetic field is described in terms of a photon field that irradiates
homogeneously the whole sample. While in the first description the tunneling
takes place mainly through photo sidebands in the case of homogeneous
illumination the main effective tunneling channels correspond to the coupling
between different electronic states due to photon absorption and emission. The
difference of tunneling mechanisms between these configurations is strongly
reflected in the transmission and current density which present very different
features in both cases. In order to analyze these effects we have obtained,
within the Transfer Hamiltonian framework, a general expression for the
transition probability for coherent resonant tunneling in terms of the Green's
function of the system.Comment: 16 pages,Figures available upon request,to appear in Phys.Rev B (15
April 1996
Spin Exciton in quantum dot with spin orbit coupling in high magnetic field
Coulomb interactions of few () electrons confined in a disk shaped
quantum dot, with a large magnetic field applied in the z-direction
(orthogonal to the dot), produce a fully spin polarized ground state. We
numerically study the splitting of the levels corresponding to the multiplet of
total spin (each labeled by a different total angular momentum )
in presence of an electric field parallel to , coupled to by a
Rashba term. We find that the first excited state is a spin exciton with a
reversed spin at the origin. This is reminiscent of the Quantum Hall
Ferromagnet at filling one which has the skyrmion-like state as its first
excited state. The spin exciton level can be tuned with the electric field and
infrared radiation can provide energy and angular momentum to excite it.Comment: 9 pages, 9 figures. submitted to Phys.Rev.
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