On the Klein-Gordon equation and hyperbolic pseudoanalytic function theory

Elliptic pseudoanalytic function theory was considered independently by Bers and Vekua decades ago. In this paper we develop a hyperbolic analogue of pseudoanalytic function theory using the algebra of hyperbolic numbers. We consider the Klein-Gordon equation with a potential. With the aid of one particular solution we factorize the Klein-Gordon operator in terms of two Vekua-type operators. We show that real parts of the solutions of one of these Vekua-type operators are solutions of the considered Klein-Gordon equation. Using hyperbolic pseudoanalytic function theory, we then obtain explicit construction of infinite systems of solutions of the Klein-Gordon equation with potential. Finally, we give some examples of application of the proposed procedure

Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

We show that once the effects of valley splitting and intervalley scattering are incorporated, renormalization group theory consistently describes the metallic phase in silicon metal-oxide-semiconductor field-effect transistors down to the lowest accessible temperatures

Weak Field Hall Resistance and Effective Carrier Density Through Metal-Insulator Transition in Si-MOS Structures

We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have found weak deviations (about 6-20 %) of the Hall voltage from its classical value. The deviations do not correlate with the strong temperature dependence of the diagonal resistivity rho_{xx}(T). The smallest deviation in R_{xy} was found in the highest mobility sample exhibiting the largest variation in the diagonal resistivity \rho_{xx} with temperature (by a factor of 5).Comment: 4 pages, 4 figures, RevTe

Comment on "Theory of metal-insulator transitions in gated semiconductors" (B. L. Altshuler and D. L. Maslov, Phys. Rev. Lett. 82, 145 (1999))

In a recent Letter, Altshuler and Maslov propose a model which attributes the anomalous temperature and field dependence of the resistivity of two-dimensional electron (or hole) systems to the charging and discharging of traps in the oxide (spacer), rather than to intrinsic behavior of interacting particles associated with a conductor-insulator transition in two dimensions. We argue against this model based on existing experimental evidence.Comment: 1 page; submitted to PR

Magnetic Field Suppression of the Conducting Phase in Two Dimensions

The anomalous conducting phase that has been shown to exist in zero field in dilute two-dimensional electron systems in silicon MOSFETs is driven into a strongly insulating state by a magnetic field of about 20 kOe applied parallel to the plane. The data suggest that in the limit of T -> 0 the conducting phase is suppressed by an arbitrarily weak magnetic field. We call attention to striking similarities to magnetic field-induced superconductor-insulator transitions

Instability of the Two-Dimensional Metallic Phase to Parallel Magnetic Field

We report on magnetotransport studies of the unusual two-dimensional metallic phase in high mobility Si-MOS structures. We have observed that the magnetic field applied in the 2D plane suppresses the metallic state, causing the resistivity to increase dramatically by more than 30 times. Over the total existence range of the metallic state, we have found three distinct types of the magnetoresistance, related to the corresponding quantum corrections to the conductivity. Our data suggest that the unusual metallic state is a consequence of both spin- and Coulomb-interaction effects.Comment: 6 pages, Latex, 4 ps fig

Diassociative algebras and Milnor's invariants for tangles

We extend Milnor's mu-invariants of link homotopy to ordered (classical or virtual) tangles. Simple combinatorial formulas for mu-invariants are given in terms of counting trees in Gauss diagrams. Invariance under Reidemeister moves corresponds to axioms of Loday's diassociative algebra. The relation of tangles to diassociative algebras is formulated in terms of a morphism of corresponding operads.Comment: 17 pages, many figures; v2: several typos correcte

Scaling and the Metal-Insulator Transition in Si/SiGe Quantum Wells

The existence of a metal-insulator transition at zero magnetic field in two- dimensional electron systems has recently been confirmed in high mobility Si-MOSFETs. In this work, the temperature dependence of the resistivity of gated Si/SiGe/Si quantum well structures has revealed a similar metal- insulator transition as a function of carrier density at zero magnetic field. We also report evidence for a Coulomb gap in the temperature dependence of the resistivity of the dilute 2D hole gas confined in a SiGe quantum well. In addition, the resistivity in the insulating phase scales with a single parameter, and is sample independent. These results are consistent with the occurrence of a metal-insulator transition at zero magnetic field in SiGe square quantum wells driven by strong hole-hole interactions.Comment: 3 pages, 3 figures, LaTe