16 research outputs found
Electrical spin injection and detection in Germanium using three terminal geometry
In this letter, we report on successful electrical spin injection and
detection in \textit{n}-type germanium-on-insulator (GOI) using a
Co/Py/AlO spin injector and 3-terminal non-local measurements. We
observe an enhanced spin accumulation signal of the order of 1 meV consistent
with the sequential tunneling process via interface states in the vicinity of
the AlO/Ge interface. This spin signal is further observable up to
220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points
at the influence of random fields arising from interface roughness on the
injected spins.Comment: 4 pages, 3 figure
Electrical and thermal spin accumulation in germanium
In this letter, we first show electrical spin injection in the germanium
conduction band at room temperature and modulate the spin signal by applying a
gate voltage to the channel. The corresponding signal modulation agrees well
with the predictions of spin diffusion models. Then by setting a temperature
gradient between germanium and the ferromagnet, we create a thermal spin
accumulation in germanium without any tunnel charge current. We show that
temperature gradients yield larger spin accumulations than pure electrical spin
injection but, due to competing microscopic effects, the thermal spin
accumulation in germanium remains surprisingly almost unchanged under the
application of a gate voltage to the channel.Comment: 7 pages, 3 figure
Crossover from spin accumulation into interface states to spin injection in the germanium conduction band
Electrical spin injection into semiconductors paves the way for exploring new
phenomena in the area of spin physics and new generations of spintronic
devices. However the exact role of interface states in spin injection mechanism
from a magnetic tunnel junction into a semiconductor is still under debate. In
this letter, we demonstrate a clear transition from spin accumulation into
interface states to spin injection in the conduction band of -Ge. We observe
spin signal amplification at low temperature due to spin accumulation into
interface states followed by a clear transition towards spin injection in the
conduction band from 200 K up to room temperature. In this regime, the spin
signal is reduced down to a value compatible with spin diffusion model. More
interestingly, we demonstrate in this regime a significant modulation of the
spin signal by spin pumping generated by ferromagnetic resonance and also by
applying a back-gate voltage which are clear manifestations of spin current and
accumulation in the germanium conduction band.Comment: 5 pages, 4 figure
Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer
International audienc
Ferroelectric Pb(Zr, Ti)O<inf>3</inf> thin layers on SrTiO<inf>3</inf>/GaAs
International audienc
X-ray photoelectron spectroscopy and diffraction investigation of a metal–oxide-semiconductor heterostructure: Pt/Gd2O3/Si(111)
International audienc
Ferroelectric Pb Zr,Ti)O3 thin layers on SrTiO3/GaAs
, may 11-15 2014International audienceno abstrac
Ferroelectric Pb(Zr,Ti)O-3 thin layers on SrTiO3/GaAs, 26th international conference on Indium Phosphide and related materials
11-15 Mai 2014International audienceno abstrac