1,925 research outputs found

    Coulomb drag at zero temperature

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    We show that the Coulomb drag effect exhibits saturation at small temperatures, when calculated to the third order in the interlayer interactions. The zero-temperature transresistance is inversely proportional to the third power of the dimensionless sheet conductance. The effect is therefore the strongest in low mobility samples. This behavior should be contrasted with the conventional (second order) prediction that the transresistance scales as a certain power of temperature and is almost mobility-independent. The result demonstrates that the zero-temperature drag is not an unambiguous signature of a strongly-coupled state in double-layer systems.Comment: 4 pages, 2 figure

    Diamagnetic response of Aharonov-Bohm rings: Impurity backward scatterings

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    We report a theoretical calculation on the persistent currents of disordered normal-metal rings. It is shown that the diamagnetic responses of the rings in the vicinity of the zero magnetic field are attributed to multiple backward scatterings off the impurities. We observe the transition from the paramagnetic response to the diamagnetic one as the strength of disorder grows using both the analytic calculation and the numerical exact diagonalization.Comment: final versio

    Nonequilibrium mesoscopic conductance fluctuations

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    We investigate the amplitude of mesoscopic fluctuations of the differential conductance of a metallic wire at arbitrary bias voltage V. For non-interacting electrons, the variance increases with V. The asymptotic large-V behavior is \sim V/V_c (where eV_c=D/L^2 is the Thouless energy), in agreement with the earlier prediction by Larkin and Khmelnitskii. We find, however, that this asymptotics has a very small numerical prefactor and sets in at very large V/V_c only, which strongly complicates its experimental observation. This high-voltage behavior is preceded by a crossover regime, V/V_c \lesssim 30, where the conductance variance increases by a factor \sim 3 as compared to its value in the regime of universal conductance fluctuations (i.e., at V->0). We further analyze the effect of dephasing due to the electron-electron scattering on at high voltages. With the Coulomb interaction taken into account, the amplitude of conductance fluctuations becomes a non-monotonic function of V. Specifically, drops as 1/V for voltages V >> gV_c, where g is the dimensionless conductance. In this regime, the conductance fluctuations are dominated by quantum-coherent regions of the wire adjacent to the reservoirs.Comment: 14 pages, 4 figures. Fig.2 and one more appendix added, accepted for publication in PR

    Influence of trigonal warping on interference effects in bilayer graphene

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    Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to trigonal warping, which suppresses the weak localization effect. We show that weak localization in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance

    Interaction corrections: temperature and parallel field dependencies of the Lorentz number in two-dimensional disordered metals

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    The electron-electron interaction corrections to the transport coefficients are calculated for a two-dimensional disordered metal in a parallel magnetic field via the quantum kinetic equation approach. For the thermal transport, three regimes (diffusive, quasiballistic and truly ballistic) can be identified as the temperature increases. For the diffusive and quasiballistic regimes, the Lorentz number dependence on the temperature and on the magnetic field is studied. The electron-electron interactions induce deviations from the Wiedemann-Franz law, whose sign depend on the temperature: at low temperatures the long-range part of the Coulomb interaction gives a positive correction, while at higher temperature the inelastic collisions dominate the negative correction. By applying a parallel field, the Lorentz number becomes a non-monotonic function of field and temperature for all values of the Fermi-liquid interaction parameter in the diffusive regime, while in the quasiballistic case this is true only sufficiently far from the Stoner instability.Comment: 11 pages, 5 figures. Appendix A revised, notes adde

    Electron-electron interaction corrections to the thermal conductivity in disordered conductors

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    We evaluate the electron-electron interaction corrections to the electronic thermal conductivity in a disordered conductor in the diffusive regime. We use a diagrammatic many-body method analogous to that of Altshuler and Aronov for the electrical conductivity. We derive results in one, two and three dimensions for both the singlet and triplet channels, and in all cases find that the Wiedemann-Franz law is violated.Comment: 8 pages, 2 figures Typos corrected in formulas (15) and (A.4) and Table 1; discussion of previous work in introduction extended; reference clarifying different definitions of parameter F adde

    Delocalization of weakly interacting bosons in a 1D quasiperiodic potential

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    We consider weakly interacting bosons in a 1D quasiperiodic potential (Aubry-Azbel-Harper model) in the regime where all single-particle states are localized. We show that the interparticle interaction may lead to the many-body delocalization and we obtain the finite-temperature phase diagram. Counterintuitively, in a wide range of parameters the delocalization requires stronger cou- pling as the temperature increases. This means that the system of bosons can undergo a transition from a fluid to insulator (glass) state under heating

    Anisotropy of zero-bias diffusive anomalies for different orientations of an external magnetic field

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    We consider the influence of the electron-electron interaction on the nonlinearity of the current-voltage characteristic of the tunnel junction at low bias (diffusive anomaly) in the presence of the classical magnetic field. We present the theory of a new phenomenon which manifests itself in the strong anisotropy of a diffusive anomaly for different orientations of the magnetic field with respect to the interface of the tunnel junction. The nonlinear differential tunneling conductance has a universal magnetic field dependence, so that only the magnetic field component perpendicular to the interface is involved. In particular, when the magnetic field is parallel to the interface, the I-V characteristic does not depend on the value of the magnetic field.Comment: 12 pages, LaTeX format, 2 figures (available from the authors), accepted for publication by PR
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