Shubnikov-de Haas oscillations of a single layer graphene under dc current bias

Shubnikov-de Haas (SdH) oscillations under a dc current bias are experimentally studied on a Hall bar sample of single layer graphene. In dc resistance, the bias current shows the common damping effect on the SdH oscillations and the effect can be well accounted for by an elevated electron temperature that is found to be linearly dependent on the current bias. In differential resistance, a novel phase inversion of the SdH oscillations has been observed with increasing dc bias, namely we observe the oscillation maxima develop into minima and vice versa. Moreover, it is found that the onset biasing current, at which a SdH extremum is about to invert, is linearly dependent on the magnetic field of the SdH extrema. These observations are quantitatively explained with the help of a general SdH formula.Comment: 5 pages, 4 figures, A few references adde

(k,q)-Compressed Sensing for dMRI with Joint Spatial-Angular Sparsity Prior

Advanced diffusion magnetic resonance imaging (dMRI) techniques, like diffusion spectrum imaging (DSI) and high angular resolution diffusion imaging (HARDI), remain underutilized compared to diffusion tensor imaging because the scan times needed to produce accurate estimations of fiber orientation are significantly longer. To accelerate DSI and HARDI, recent methods from compressed sensing (CS) exploit a sparse underlying representation of the data in the spatial and angular domains to undersample in the respective k- and q-spaces. State-of-the-art frameworks, however, impose sparsity in the spatial and angular domains separately and involve the sum of the corresponding sparse regularizers. In contrast, we propose a unified (k,q)-CS formulation which imposes sparsity jointly in the spatial-angular domain to further increase sparsity of dMRI signals and reduce the required subsampling rate. To efficiently solve this large-scale global reconstruction problem, we introduce a novel adaptation of the FISTA algorithm that exploits dictionary separability. We show on phantom and real HARDI data that our approach achieves significantly more accurate signal reconstructions than the state of the art while sampling only 2-4% of the (k,q)-space, allowing for the potential of new levels of dMRI acceleration.Comment: To be published in the 2017 Computational Diffusion MRI Workshop of MICCA

Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates

Near-lattice-matched GaN/Al1−xInxN single quantum wells, grown using both free-standing GaN and conventional GaN-on-sapphire substrates, are studied by photoluminescence (PL) and PL excitation spectroscopies. PL spectra distinguish luminescence originating in the wells, barriers, and underlying GaN buffer layers. The spectra also reveal significant differences between structures grown simultaneously on the different substrates. The quantum well transition energy decreases as the well width increases due to the intense in-built electric fields, estimated to be 3.0±0.5 MeV/cm, that persist in strain free GaN/Al1−xInxN. Screening of these fields is studied using the excitation power dependence of the P

Improvement of dielectric loss of doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices

Al2O3-Ba0.5Sr0.5TiO3 (Al2O3-BST) thin films, with different Al2O3 contents, were deposited on (100) LaAlO3 substrate by pulsed laser deposition (PLD) technique. The Al2O3-BST films was demosnstrated to be a suitable systems to fabricate ferroelectric thin films with low dielectric loss and higher figure of merit for tunable microwave devices. Pure BST thin films were also fabricated for comparison purpose. The films' structure and morphology were analyzed by X-ray diffractiopn and scanning electron microscopy, respectively; nad showed that the surface roughness for the Al2O3-BST films increased with the Al2O3 content. Apart from that, the broadening in the intensity peak in XRD result indicating the grain size of the Al2O3-BST films reduced with the increasing of Al2O3 dopant. We measured the dielctric properties of Al2O3-BST films with a home-made non-destructive dual resonator method at frequency ~ 7.7 GHZ. The effect of doped Al2O3 into BST thin films significantly reduced the dielectric constant, dielectric loss and tunability compare to pure BST thin film. Our result shows the figure of merit (K), used to compare the films with varied dielectric properties, increased with the Al2O3 content. Therefore Al2O3-BST films show the potential to be exploited in tunable microwave devices.Comment: 8 pages, 4 figures, 1 table. Accepted & tentatively for Feb 15 2004 issue, Journal of Applied Physic

Carrier and polarization dynamics in monolayer MoS2

In monolayer MoS2 optical transitions across the direct bandgap are governed by chiral selection rules, allowing optical valley initialization. In time resolved photoluminescence (PL) experiments we find that both the polarization and emission dynamics do not change from 4K to 300K within our time resolution. We measure a high polarization and show that under pulsed excitation the emission polarization significantly decreases with increasing laser power. We find a fast exciton emission decay time on the order of 4ps. The absence of a clear PL polarization decay within our time resolution suggests that the initially injected polarization dominates the steady state PL polarization. The observed decrease of the initial polarization with increasing pump photon energy hints at a possible ultrafast intervalley relaxation beyond the experimental ps time resolution. By compensating the temperature induced change in bandgap energy with the excitation laser energy an emission polarization of 40% is recovered at 300K, close to the maximum emission polarization for this sample at 4K.Comment: 7 pages, 7 figures including supplementary materia

Analisis Kinerja Simpang Steger Tak Bersinyal Pada Jl. Buah Batu - Jl. Solontongan - Jl. Suryalaya Kota Bandung

Berdekatan. Simpang merupakan pertemuan antara beberapa jalan menjadi satu. Pada simpangsering terjadi konflik kendaraan bermotor, khususnya simpang tidak bersinyal. Kecenderunganpengguna kendaraan bermotor pada saat ini selalu ingin cepat dan ingin menang sendiri dan seringmengakibatkan konflik di persimpangan. Akibat terjadinya konflik dan hambatan padapersimpangan, maka meningkatnya juga tundaan dan derajat kejenuhan (DS) di simpang tersebut.Analisis dilakukan pada simpang empat steger tak bersinyal, tepatnya pada jl.Buahbatu–jl.Solontongan–jl.Suryalaya. Data diperoleh dari survei lapangan berupa geometri simpang, aruslalulintas pada waktu pagi, siang dan sore selama 3 jam kemudian diambil peakhour, polapergerakan kendaraan pada jam tertentu, kecepatan dan keadaan hambatan samping secara visualpada simpang tersebut. Analisis terhadap simpang empat steger tak bersinyal ini dilakukan denganmengunakan metode MKJI yaitu simpang empat bersinyal, Simpang tiga tak bersinyal dansimpang tiga bersinyal. Analisis awal dilakukan dengan menggunakan metode MKJI simpang tigatak bersinyal untuk mengetahui kinerja simpang tersebut dan menghasilkan DS>1. Alternatif yangdianalisis sebanyak 3 alternatif dan menghasilkan data tundaan dan derajat kejenuhan. Dari ketigaalternatif tersebut didapatkan Alternatif terpilih yaitu alternatif 3 dengan cara menggunakanseparator pada area disekitar simpang tersebut sepanjang 300 m dan menghasilkan derajatkejenuhan rata–rata < 0,6.

Paper Replication Method for Isolation of Radiation-Sensitive Mutants

A filter paper replication system particularly useful for isolation of radiation-sensitive mutants of pigmented bacteria was devised. The fidelity of replication was high. Adhesion between a paper disk and a properly dried master plate provided adequate contact pressure. The replicas arising from this technique constitute a convenient apparatus for general application in isolation of clones sensitive to a discriminating treatment