Etching-dependent reproducible memory switching in vertical SiO2 structures

Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which short voltage pulses (1 $\mu$s) can switch the devices between high- and low-impedance states. Through the comparison of current-voltage characteristics in structures made by different methods, filamentary conduction at the etched oxide edges is most consistent with the results, providing insights into similar behaviors in metal/SiO/metal systems. High ON/OFF ratios of over 10$^{4}$ were demonstrated.Comment: 6 pages, 3 figures + 2 suppl. figure

Induced Growth of Asymmetric Nanocantilever Arrays on Polar Surfaces

©2003 The American Physical Society. The electronic version of this article is the complete one and can be found online at: http://link.aps.org/doi/10.1103/PhysRevLett.91.185502DOI: 10.1103/PhysRevLett.91.185502We report that the Zn-terminated ZnO (0001) polar surface is chemically active and the oxygenterminated (0001) polar surface is inert in the growth of nanocantilever arrays. Longer and wider "comblike" nanocantilever arrays are grown from the (0001)-Zn surface, which is suggested to be a self-catalyzed process due to the enrichment of Zn at the growth front. The chemically inactive (0001)-O surface typically does not initiate any growth, but controlling experimental conditions could lead to the growth of shorter and narrower nanocantilevers from the intersections between (0001)-O with (0110) surfaces

Approximation for discrete Fourier transform and application in study of three-dimensional interacting electron gas

The discrete Fourier transform is approximated by summing over part of the terms with corresponding weights. The approximation reduces significantly the requirement for computer memory storage and enhances the numerical computation efficiency with several orders without loosing accuracy. As an example, we apply the algorithm to study the three-dimensional interacting electron gas under the renormalized-ring-diagram approximation where the Green's function needs to be self-consistently solved. We present the results for the chemical potential, compressibility, free energy, entropy, and specific heat of the system. The ground-state energy obtained by the present calculation is compared with the existing results of Monte Carlo simulation and random-phase approximation.Comment: 11 pages, 13 figure

Exploring the quantum critical behaviour in a driven Tavis-Cummings circuit

Quantum phase transitions play an important role in many-body systems and have been a research focus in conventional condensed matter physics over the past few decades. Artificial atoms, such as superconducting qubits that can be individually manipulated, provide a new paradigm of realising and exploring quantum phase transitions by engineering an on-chip quantum simulator. Here we demonstrate experimentally the quantum critical behaviour in a highly-controllable superconducting circuit, consisting of four qubits coupled to a common resonator mode. By off-resonantly driving the system to renormalise the critical spin-field coupling strength, we have observed a four-qubit non-equilibrium quantum phase transition in a dynamical manner, i.e., we sweep the critical coupling strength over time and monitor the four-qubit scaled moments for a signature of a structural change of the system's eigenstates. Our observation of the non-equilibrium quantum phase transition, which is in good agreement with the driven Tavis-Cummings theory under decoherence, offers new experimental approaches towards exploring quantum phase transition related science, such as scaling behaviours, parity breaking and long-range quantum correlations.Comment: Main text with 3 figure

Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 10 6-10 8. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 10 7 over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RM