Renal Anomalies Associated with Ectopic Neurohypophysis

Objective: Although the etiology of ectopic neurohypophysis that leads to pituitary hormone deficiencies is not yet clearly understood, birth trauma or genetic factors have been considered responsible. Concurrent cranial and extracranial congenital anomalies have been reported in such cases. The aim of the present study was to investigate the frequency of renal anomalies in nonsyndromic cases with ectopic neurohypophysis

High-quality MOVPE butt-joint integration of InP/AlGaInAs/InGaAsP-based all-active optical components

AbstractIn this paper, we demonstrate the applicability of MOVPE butt-joint regrowth for integration of all-active InP/AlGaAs/InGaAsP optical components and the realization of high-functionality compact photonic devices. Planar high-quality integration of semiconductor optical amplifiers of various epi-structures with a multi-quantum well electro-absorption modulator has been successfully performed and their optical and crystalline quality was experimentally investigated. The regrown multi-quantum well material exhibits a slight bandgap blue-shift of less than 20meV, when moving away from the regrowth interface. In closest vicinity to the mask, the growth profile revealed a bent-up shape which is associated with an increase in the bandgap energy resulting from the combined effect of growth rate suppression and higher Ga concentration. This increase in bandgap energy makes the interface partially transparent (thus beneficial for unaffected light transmission) and forces carriers away from possible interfacial defects. The internal reflectivity below 2.1×10−5 ensures minimization of detrimental intracavity feedback

0.3pA dark current and 0.65A/W responsivity 1020nm InGaAs/GaAs nano-ridge waveguide photodetector monolithically integrated on a 300-mm Si wafer

We report p-i-n InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetectors monolithically integrated on a 300-mm Si wafer. The devices exhibit low dark currents of 0.3 pA ( 1.36×10 -7 A/cm 2 ) at -1 V bias and internal responsivities of 0.65A/W at 1020nm wavelength

All-Optical 9.35 Gb/s Wavelength Conversion in an InP Photonic Crystal Nanocavity

Wavelength conversion of a 9.35 Gb/s RZ signal is demonstrated using an InP photonic crystal H0 nanocavity. A clear eye is observed for the converted signal showing a pre-FEC bit error ratio down to 10-3

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxial growth of III-V materials remains the pinnacle in realizing cost-effective on-chip light sources. Here, we report the first electrically driven GaAs-based multi-quantum-well laser diodes fully fabricated on 300 mm Si wafers in a CMOS pilot manufacturing line. GaAs nano-ridge waveguides with embedded p-i-n diodes, InGaAs quantum wells and InGaP passivation layers are grown with high quality at wafer scale, leveraging selective-area epitaxy with aspect-ratio trapping. After III-V facet patterning and standard CMOS contact metallization, room-temperature continuous-wave lasing is demonstrated at wavelengths around 1020 nm in more than three hundred devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz, and laser operation up to 55 {\deg}C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.Comment: 40 pages with 16 figures. pdf includes supplementary informatio