7 research outputs found

    Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

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    The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed

    Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

    Get PDF
    The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed

    Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures

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    This paper describes the principle of operation, construction, architecture and fabrication of a new type of monolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP) on the basis of functional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is given. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array with high and low voltage functionally integrated structures (FIS) and peripheral electronic circuits of amplification and signal processing matrix. Estimations and presents comparative characteristics are presented. They show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of -particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3625

    Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures

    Get PDF
    This paper describes the principle of operation, construction, architecture and fabrication of a new type of monolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP) on the basis of functional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is given. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array with high and low voltage functionally integrated structures (FIS) and peripheral electronic circuits of amplification and signal processing matrix. Estimations and presents comparative characteristics are presented. They show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of -particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3625

    LEAD COORDINATION AND ORGANOMETALLIC COMPOUNDS: CLASSIFICATION AND ANALYSIS OF CRYSTALLOGRAPHIC AND STRUCTURAL DATA

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    TIN ORGANOMETALLIC COMPOUNDS: CLASSIFICATION AND ANALYSIS OF CRYSTALLOGRAPHIC AND STRUCTURAL DATA: PART 1. MONOMERIC DERIVATIVES

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    Dulaglutide and cardiovascular outcomes in type 2 diabetes (REWIND): a double-blind, randomised placebo-controlled trial

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