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Scanning tunneling microscopy studies of self-assembled nanostructures on graphite

Ph.DDOCTOR OF PHILOSOPH

Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target

Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001) substrates by laser molecular beam epitaxy (LMBE) were investigated in the range of 500-750 degrees C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM), micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS). The x-ray rocking curve full width at a half maximum (FWHM) value for (0002) reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 degrees C to 600 degrees C and the value further decreased with increase of growth temperature up to 720 degrees C. A highly c-axis oriented GaN epitaxial film was obtained at 720 degrees C with a (0002) plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 degrees C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 degrees C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE

Flexible perylenediimide/GaN organic-inorganic hybrid system with exciting optical and interfacial properties

We report the band gap tuning and facilitated charge transport at perylenediimide (PDI)/GaN interface in organic-inorganic hybrid nanostructure system over flexible titanium (Ti) foil. Energy levels of the materials perfectly align and facilitate high efficiency charge transfer from electron rich n-GaN to electron deficient PDI molecules. Proper interface formation resulted in band gap tuning as well as facilitated electron transport as evident in I-V characteristics. Growth of PDI/GaN hybrid system with band gap tuning from ultra-violet to visible region and excellent electrical properties open up new paradigm for fabrication of efficient optoelectronics devices on flexible substrates

Material Study of Co2CrAl Heusler Alloy Magnetic Thin Film and Co2CrAl/n-Si Schottky Junction Device

The structural, optical, magnetic, and electrical properties of Co2CrAl Heusler alloy magnetic thin films grown on n-type silicon (100) substrate (n-Si) and glass substrate were studied. The films were deposited using DC magnetron sputtering. X-ray diffraction (XRD) analysis confirmed the polycrystalline nature of the films. The effect of grain size on transmittance was investigated. Magnetic measurements revealed the presence of magnetic ordering in the films. Partial densities of states (PDOS) of the Co2CrAl were calculated by density functional theory (DFT) methods using the Vienna Ab initio Simulation Package (VASP). Co2CrAl thin film deposited over a silicon substrate was investigated for I-V characteristics. The electrical behaviour confirmed the existence of a Co2CrAl/n-Si Schottky contact, which suggests a spin injection phenomenon from Co2CrAl to n-Si by tunnelling through the lowered Schottky barrier

Photoconductivity and photo-detection response of multiferroic bismuth iron oxide

We report visible light detection with in-plane BiFeO3 (BFO) thin films grown on pre-patterned inter-digital electrodes. In-plane configured BFO film displayed photocurrents with a 40:1 photo-to-dark-current ratio and improved photo-sensing ability for >15000 s (4 hrs) under small bias voltage (42V). Nearly sixty percent of the photo-induced charge carriers decay in 1.0 s and follow a double-exponential decay model. At 373 K the effect of light does not significantly increase the dark current, probably due to reduced mobility. Sub-bandgap weak monochromatic light (1 mw/cm2) shows one fold increase in photo-charge carriers.Comment: 18 pages, 7 figure

Surface structure and solidification morphology of aluminum nanoclusters

Classical molecular dynamics simulation with embedded atom method potential had been performed to investigate the surface structure and solidification morphology of aluminum nanoclusters Aln (n = 256, 604, 1220 and 2048). It is found that Al cluster surfaces are comprised of (111) and (001) crystal planes. (110) crystal plane is not found on Al cluster surfaces in our simulation. On the surfaces of smaller Al clusters (n = 256 and 604), (111) crystal planes are dominant. On larger Al clusters (n = 1220 and 2048), (111) planes are still dominant but (001) planes can not be neglected. Atomic density on cluster (111)/(001) surface is smaller/larger than the corresponding value on bulk surface. Computational analysis on total surface area and surface energies indicates that the total surface energy of an ideal Al nanocluster has the minimum value when (001) planes occupy 25% of the total surface area. We predict that a melted Al cluster will be a truncated octahedron after equilibrium solidification.Comment: 22 pages, 6 figures, 34 reference

Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

We have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a constant r.f. nitrogen plasma ambient. The effect of laser repetition rate in the range of 10 to 30 Hz on the structural properties of the GaN nanostructures has been studied using high resolution X-ray diffraction, field emission scanning electron microscopy and Raman spectroscopy. The variation of the laser repetition rate affected the tip width and pore size of the nanowall networks. The z-profile Raman spectroscopy measurements revealed the GaN nanowall network retained the same strain present in the GaN template. The optical properties of these GaN nanowall networks have been studied using photoluminescence and ultrafast spectroscopy and an enhancement of optical band gap has been observed for the nanowalls having a tip width of 10-15 nm due to the quantum carrier confinement effect at the wall edges. The electronic structure of the GaN nanowall networks has been studied using X-ray photoemission spectroscopy and it has been compared to the GaN template. The calculated Ga/N ratio is largest (similar to 2) for the GaN nanowall network grown at 30 Hz. Surface band bending decreases for the nanowall network with the lowest tip width. The homoepitaxial growth of porous GaN nanowall networks holds promise for the design of nitride based sensor devices