BaFe2As2/Fe bilayers with [001]-tilt grain boundary on MgO and SrTiO3 bicrystal substrates

Co-doped BaFe2As2 (Ba-122) can be realized on both MgO and SrTiO3 bicrystal substrates with [001]-tilt grain boundary by employing Fe buffer layers. However, an additional spinel (i.e. MgAl2O4) buffer between Fe and SrTiO3 is necessary since an epitaxial, smooth surface of Fe layer can not be grown on bare SrTiO3. Both types of bicrystal films show good crystalline quality.Comment: Accepted for the ISS2012 Proceedins, a special issue of Physics Procedi

Hall-plot of the phase diagram for Ba(Fe1-xCox)2As2

The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by $R_H^{-1} = -en$, where $e$ is the charge of the carrier, and $n$ is the concentration. However, it is well known that in the critical region near a quantum phase transition, as it was demonstrated for cuprates and heavy fermions, the Hall coefficient exhibits strong temperature and doping dependencies, which can not be described by such a simple expression, and the interpretation of the Hall coefficient for Fe-based superconductors is also problematic. Here, we investigate thin films of Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ with compressive and tensile in-plane strain in a wide range of Co doping. Such in-plane strain changes the band structure of the compounds, resulting in various shifts of the whole phase diagram as a function of Co doping. We show that the resultant phase diagrams for different strain states can be mapped onto a single phase diagram with the Hall number. This universal plot is attributed to the critical fluctuations in multiband systems near the antiferromagnetic transition, which may suggest a direct link between magnetic and superconducting properties in the BaFe$_2$As$_2$ system.Comment: Accepted for publication in Scientific Reports, 6 main figures plus Supplemental Information (8 figures

CT-Based Attenuation Correction in I-123-Ioflupane SPECT

Purpose Attenuation correction (AC) based on low-dose computed tomography (CT) could be more accurate in brain single-photon emission computed tomography (SPECT) than the widely used Chang method, and, therefore, has the potential to improve both semi-quantitative analysis and visual image interpretation. The present study evaluated CT-based AC for dopamine transporter SPECT with I-123-ioflupane. Materials and methods Sixty-two consecutive patients in whom I-123-ioflupane SPECT including low-dose CT had been performed were recruited retrospectively at 3 centres. For each patient, 3 different SPECT images were reconstructed: without AC, with Chang AC and with CT-based AC. Distribution volume ratio (DVR) images were obtained by scaling voxel intensities using the whole brain without striata as reference. For assessing the impact of AC on semi-quantitative analysis, specific-to-background ratios (SBR) in caudate and putamen were obtained by fully automated SPM8-based region of interest (ROI) analysis and tested for their diagnostic power using receiver-operator- characteristic (ROC) analysis. For assessing the impact of AC on visual image reading, screenshots of stereotactically normalized DVR images presented in randomized order were interpreted independently by two raters at each centre. Results CT-based AC resulted in intermediate SBRs about half way between no AC and Chang. Maximum area under the ROC curve was achieved by the putamen SBR, with negligible impact of AC (0.924, 0.935 and 0.938 for no, CT-based and Chang AC). Diagnostic accuracy of visual interpretation also did not depend on AC. Conclusions The impact of CT-based versus Chang AC on the interpretation of I-123-ioflupane SPECT is negligible. Therefore, CT-based AC cannot be recommended for routine use in clinical patient care, not least because of the additional radiation exposure

High field superconducting properties of Ba(Fe1-xCox)2As2 thin films

The film investigated grew phase-pure and highly textured with in-plane and out-of-plane full width at half maximum, FWHM, of = 0.74° and = 0.9°, Suppl. S1. The sample, however, does contain a large density of ab-planar defects, as revealed by transition electron microscope (TEM) images of focused ion beam (FIB) cuts near the microbridges, Fig. 1. These defects are presumably stacking faults (i.e. missing FeAs layers)20. The reason for this defect formation (also observed on technical substrates)21 is not fully understood. Possible reasons are a partial As loss during deposition22, and relaxation processes in combination with the Fe buffer layer23. Estimating the distance between these intergrowths leads to values varying between 5 and 10 nm. Between the planar defects, an orientation contrast is visible in TEM (inset Fig. 1b), i.e. the brighter crystallites are slightly rotated either around (010) (out-of-plane spread, ) or around (001) (in-plane spread, ) and enclosed by dislocation networks or small-angle GBs. Since the crystallites are sandwiched between planar defects, an in-plane misorientation is most likely. The out-of-plane misorientation, on the other hand, is visible as a slight tilt of the ab-planar defects with respect to each other, especially in the upper part of the sample. No globular or columnar precipitates were found