Features of Electronic Emission from Surface of Dielectric Thin-film Materials with Ion-beam Etching

This work presents a series of experimental studies aimed at validating the main theoretical aspects of the ion-electron emission in conditions of ion-beam etching and lookup the possibility of practical realiza-tion of the method of operative control processes ion-beam etching different dielectric thin film materials of electronic technics. In the real article the estimation of influence of the pointed superficial potential is conducted in dielec-tric tape on the integral signal of secondary electrons at an ionic etch. The electric field strength in dielectric film under the influence of the induced potential creates prereq-uisites for the emergence of "Malterovskay" emission, defined by properties actually dielectric and proper-ties of the substrate. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3627

Features of Ion-Electronic Emission from Surface of Semiconductors

The results of the research value of the current of the secondary electrons in the ion-beam etching of various semiconductors. Shows the setup and electrical circuit of the experiment. An experimental study to determine the dependence of the current of the secondary electrons from the band gap Eg and the height of the potential barrier (electron affinity) eχ. It is shown that in the conditions of ion-beam etching of the semiconductor is the penetration of the electric field, which leads to a shift of the energy levels of electrons in the surface layer. Found that the ion-electronic signal emission silicon n-type is higher than the p-type silicon. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3366

Impedance spectroscopy of synthetic proustite at high pressures

The effect of high pressure (up to 40 GPa) and alternating electric field frequency (100 Hz-500 kHz) on the electrical properties of synthesized single-crystal proustite Ag3AsS3 is studied. The behavior of real and imaginary parts of impedance upon an increase in pressure confirms earlier data on the closing of valence and conduction zones, and on the material's transition to the metal state at ∼30 GPa. © 2013 Allerton Press, Inc

Concept for a Case Study of a Large Electrical Engineering Enterprise

This concept for research on problems of innovation management of electrotechnical firms emerged from two ideas, the cores of which cut close to those set forth in the research proposal. One of these was to spread the interest over several sectors that differ in the character of their development. Electrotechnology, a notion yet to be widely accepted, and used here to denote an industrial branch producing products for electro-engineering (power engineering, consumer goods produced with basically the same technology, etc.), is considered a mature industry with a steady and relatively stable growth. Determining what role innovation has played in this development and what problems it gives rise to promises to be a challenging task. The second idea was that in several countries similar but uncoordinated studies are underway and that in fact similar structures can be observed. The object of the study-in this case an electrotechnical company-is being studied by an external research institute, through close collaboration of course. Data on gross production and value added in this branch show similar trends in many countries, although there are differences in external factors, such as processes of capital formation. The many similarities in the organization and structure of production processes could be useful in preparing a more reliable view of future development of this industrial branch. Electrotechnology will not be able to escape the effects of computer-aided design, robots and flexible manufacturing systems, power semi-conductors, new materials, better testing methods, and of course changing price structures. This concept will also serve as a blueprint at the first task force meeting in Leningrad where through discussion it will be possible to order the individual issues according to participants' priorities

Colossal variations in the thermopower and n-p conductivity switching in topological tellurides under pressure

Under applied high pressure, the electronic, optical, structural, and other properties of narrow-bandgap telluride semiconductors are subjected to dramatic changes. They can include, for instance, structural and electronic topological transitions. In this work, we investigated the electronic properties of single crystals of three families of tellurides, namely, HgTe, PbTe, and Bi2Te3 by measurements of the thermoelectric power (the Seebeck coefficient) and electrical resistance under high pressure up to 10 GPa. The applied pressure led to spectacular variations in the electronic transport of all three tellurides. We addressed these effects to electronic topological transitions that could be driven by significant narrowing of the bandgaps in the normal-pressure phases of these compounds. In particular, at about 1 GPa, we observed an n-p switching in the conductivity of HgTe, which was well reproducible under multiple pressure cycling. In contrast, in PbTe, we found that an electronic topological transition irreversibly turns the conductivity from p- to n-type. An electronic topological Lifshitz transition in p-type Bi2Te3 crystals with a low carrier concentration enhanced the n-type conductivity in a narrow pressure region about 2-3 GPa and resulted in a double p-n-p conductivity inversion. An irreversible p-n conductivity switching in p-type Bi2Te3 happened already on decompression from a high-pressure phase from about 8 GPa. The stress-controlled p-n inversions of the electrical conductivity in these industrially important telluride materials can potentially find emergent applications in micro- and nanoelectronics. © 2020 Author(s).The research was supported by a grant of Ministry of Science and Higher Education of the Russian Federation No. 075-15-2020-797 (13.1902.21.0024)

DETERMINATION OF THE MINIMUM RESERVE INFUSION SOLUTIONFOR INTENSIVE CARE IN EMERGENCY AID TO VICTIMS EMERGENCY

Purpose: to develop a science-based methodology for determining the need for infusion solutions needed to provide emergency medical care and follow-up treatment of the aff ected population in the liquidation of the health consequences of emergencies.Materials and methods: the analysis of legislative and regulatory framework in а sphere of public drug coverage for emergency medical assistance in emergencies. Th e methodological basis of research were the principles of the system, an integrated, process, logical framework approach to study the organization of activities of pharmacy chains in emergencies.Results: putting into practice the proposed evidence-based management allows health authorities and State Disaster Medicine Service plan and calculate an amount need of infusion solutions for emergency medical care in the aft ermath of the loss of health in emergencies. Application of the proposed method to optimize rational use of budgetary funds for the establishment of local, district and regional reserves infusion solutions for the liquidation of consequences of emergency situations.Summary: the proposed planning approach of minimum reserves of intravenous fl uids to provide intensive therapy requires further improvement of theoretical and methodological basis