QED Radiative Corrections to the Non-annihilation Processes Using the Structure Function and the Parton Shower

Inclusion of the QED higher order radiative corrections in the two-photon process, e+e- -> e+e- mu+mu-, is examined by means of the structure function and the parton shower. Results are compared with the exact $O(\alpha)$ calculations and give a good agreement. These two methods should be universally applicable to any other non-annihilation processes like the single-W productions in the e+e- collisions. In this case, however, the energy scale for the evolution by the renormalization-group equation should be chosen properly depending on the dominant diagrams for the given process. A method to find the most suitable energy scale is proposed.Comment: 17 pages, LaTeX, 5 figure

QED Radiative Correction for the Single-W Production using a Parton Shower Method

A parton shower method for the photonic radiative correction is applied to the single W-boson production processes. The energy scale for the evolution of the parton shower is determined so that the correct soft-photon emission is reproduced. Photon spectra radiated from the partons are compared with those from the exact matrix elements, and show a good agreement. Possible errors due to a inappropriate energy-scale selection or due to the ambiguity of energy scale determination are also discussed, particularly for the measurements on triple gauge-couplings.Comment: 17 pages, 6 Postscript figure

Spin-charge mixing effects on resonant tunneling in a polarized Luttinger Liquid

We investigate spin-charge mixing effect on resonant tunneling in spin-polarized Tomonaga-Luttinger liquid with double impurities. The mixing arises from Fermi velocity difference between two spin species due to Zeeman effect. Zero bias conductance is calculated as a function of gate voltage $V_{\rm g}$, gate magnetic field $B_{\rm g}$, temperature and magnetic field applied to the system. Mixing effect is shown to cause rotation of the lattice pattern of the conductance peaks in $(V_{\rm g},B_{\rm g})$ plane, which can be observed in experiments. At low temperatures, the contour shapes are classified into three types, reflecting the fact that effective barrier potential is renormalized towards ``perfect reflection'', ``perfect transmission'' and magnetic field induced ``spin-filtering'', respectively.Comment: 10 pages, 4 figures, Sec.I and references largely changed, results for a strong barrier limit added in a new section Sec.I

Multiple roles for endothelin in melanocyte development: Regulation of progenitor number and stimulation of differentiation

Melanocytes in the skin are derived from the embryonic neural crest, Recently, mutations in endothelin 3 and the endothelin receptor B genes have been shown to result in gross pigment defects, indicating that this signalling pathway is required for melanocyte development. We have examined the effects of endothelins on melanocyte progenitors in cultures of mouse neural crest. Firstly, they stimulate an increase in progenitor number and act synergistically with another factor, Steel factor, in the survival and proliferation of the progenitors. These findings are consistent with findings from mice with natural mutations in the endothelin receptor B gene, which show an early loss of melanocyte progenitors. Secondly, endothelins induce differentiation of the progenitors into fully mature pigmented melanocytes. This finding is consistent with the expression of endothelins in the skin of mice at the initiation of pigmentation. The melanocytes generated in endothelin-treated cultures also become responsive to alpha melanocyte-stimulating hormone, which then acts to regulate the activity of the pigmentation pathway. These findings indicate two key roles for endothelin in melanocyte development: regulation of expansion of the progenitor pool and differentiation of progenitors into mature melanocytes

Temperature dependence of infrared reflectance spectra of InN

To investigate both the optical and electrical properties of InN, we have measured the infrared reflectance spectra of InN thin films and performed the fitting analyses of the infrared spectra to obtain not only phonon frequencies and the damping factors but also the carrier concentration of InN. In this paper, we extend the aim of those analyses to the electron mobility and demonstrate that the temperature dependence of the electron mobility can be discussed using the infrared reflectance spectra analyses