16 research outputs found

    Clinical characteristics of COVID-19 in oncology patients: Case control design- Pilot study

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    There was no significant difference between cases and controls in any of the matching variables such as age, gender, cancer histology, cancer site, and cancer behavior. Bilja Kurian Sajith pictured.https://openworks.mdanderson.org/aprn-week-21/1012/thumbnail.jp

    Synthesis and magnetic characterization of CoMoN2 nanoparticles

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    A new ternary nitride, CoMoN2, was prepared in the nanosize regime of 9.0 ± 2.0 nm, by nitridation of the precursor intermetallic nitride Co3Mo3N. XRD–Rietveld analysis revealed the presence of 0.60 (±0.02) mass % of Co impurity phase. The calculated space groups of CoMoN2 and Co are P63/mmc and Fm-3m, respectively. The N atoms lie at the interstitial sites and the 12 calculated nitrogen sites indicate the presence of a layered structure. The XPS studies indicated the presence of the nitride and surface oxynitride/oxide phases. CoMoN2 is an interstitial nitride with Co and Mo in the zero oxidation state. The room temperature susceptibility is estimated after subtracting the ferromagnetic contribution from cobalt and found to be 2.7 9 10-4 emu g-1 Oe-1,indicating the Pauli-paramagnetic nature. The ferromagnetic exchange interactions between the Co atoms in CoMoN2 are reduced due to the presence of Mo and N in the crystal lattice. The hysteresis loop shift 19 Oe is attributed to the demagnetizing dipolar fields created in the soft CoMoN2 phase by the hard Co phase

    Significant Enhancement in Visible Light Absorption of TiO<sub>2</sub> Nanotube Arrays by Surface Band Gap Tuning

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    Band gap tuning of the wide band gap semiconductor, TiO<sub>2</sub>, has great importance due to its versatile properties in solar cell applications. Visible light activity of TiO<sub>2</sub> can enhance the efficiency of the third-generation solar cells by acting itself as light absorbing material. In this study, we demonstrate a surface structure modification and band gap tuning of TiO<sub>2</sub> nanotube arrays (TNTA) by anodization accompanied by a short-term, quick annealing process. This TNTA shows absorption both in the UV and entire visible range (400–700 nm, an increase by 350%). The effective band gap is found to be 1.7 eV. Through a detailed analysis we show that the significantly enhanced visible light absorption in the entire visible range is due to the substitutional and interstitial carbon atoms on the surface which introduces a structural disorder and localized states at the surface compared to the bulk. Based on the results from photoemission spectra, the probable band gap modeling shows a band bending at the surface. This behavior points to the excessive electronic conduction at the surface which has both merits and demerits in the applications of TNTAs in photocatalytic and photovoltaics in terms of surface recombination. This is confirmed by a solar cell device fabrication and testing

    REBa 2

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    Ab Initio study of the structural, electronic, magnetic, and hyperfine properties of GaxFe4 xN (0.00 e x e 1.00) nitrides

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    The dependence with Ga content (x) of structural, magnetic, and hyperfine properties of GaxFe4–xN compounds has been studied using the full-potential linearized augmented planewave method based on density functional theory. A nonlinear increase of the lattice parameter with x was observed, ascribed to the different metallic radii of Fe and Ga atoms and a magneto-volumetric effect. The magnetic moment per formula unit (Mfu) decreases linearly with x, where the Mfu of GaFe3N is almost half for the corresponding value of γ′-Fe4N, mainly due to the decreasing of magnetic moment of the FeII (3c Wyckoff position) atoms with the number of Ga next nearest neighbors (nnn). The hyperfine parameters of the FeI (1a Wyckoff position) do not change with x, whereas the hyperfine field (Bhf), isomer shift (δ), and quadrupole shift (ε) of the FeII atoms depend linearly with nnn Ga atoms. Furthermore, by use of fixed spin moment calculation to obtain the curve Mfu vs total energy, it was possible to determine that the ground state of GaFe3N belongs to a ferrimagnetic configuration with a lattice parameter similar to the experimental value.Fil: Gil Rebaza, Arles Victor. Universidad Nacional de la Plata. Facultad de Ciencias Exactas. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Desimoni, Judith. Universidad Nacional de la Plata. Facultad de Ciencias Exactas. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Kurian, Sajith. Indian Institute of Technology; IndiaFil: Bhattacharyya, Sayan. Indian Institute of Science Education and Research; IndiaFil: Gajbhiye,Namdeo S.. Indian Institute of Technology; India. Indian Institute of Science Education and Research; IndiaFil: Peltzer y Blanca, Eitel Leopoldo. Universidad Nacional de la Plata. Facultad de Ingenieria. Departamento de Electrotecnia. Grupo de Est.s/materiales y Disposit.electronicos; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentin

    YBa

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    Ba2 ⁣ ⁣LaMb ⁣ ⁣O6\rm Ba_2\!\!LaMb\!\!O_6, a new perovskite substrate material for Y ⁣ ⁣ptBa2 ⁣ ⁣Cu3 ⁣ ⁣O7-δ\rm Y\!\!ptBa_2\!\!Cu_3\!\!O_{7\hbox{-}\delta}, has been grown epitaxially on (100) MgO by pulsed-laser ablation method. A superconducting YBa2Cu3O7-δ\rm Y Ba_2Cu_3O_{7\hbox{-}\delta} film in situ grown on an epitaxial Ba2LaNbO6\rm Ba_2LaNbO_6 film gave a TC(0)=90  KT_{\rm C}(0)=90\;{\rm K} with a transition width ΔT=0.5  K\Delta T=0.5\;{\rm K}. The YBa2Cu3O7-δ\rm YBa_2Cu_3O_{7\hbox{-}\delta} films exhibited (00)(00\ell) orientation of an orthorhombic YBa2Cu3O7-δ\rm YBa_2Cu_3O_{7\hbox{-}\delta} phase and showed almost perfect metallic behaviour in the normal state with resistance ratio (R300K/R100K)=2.98(R_{\rm 300K}/R_{\rm 100K})=2.98. Critical current density of 5×106  A/cm25\times 10^6\;{\rm A/cm^2} at 77 K was obtained consistently for the YBa2Cu3O7-δ\rm YBa_2Cu_3O_{7\hbox{-}\delta} films in situ grown on epitaxial Ba2LaNbO6\rm Ba_2LaNbO_6 films
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