Mechanisms of homeostasis of blood coagulation factors

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/106052/1/jth05170.pd

Functional pan‐universality of the age‐related regulatory elements ASE and AIE, and development of age dimension technology

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/106078/1/jth05171.pd

Higgsless Models: Lessons from Deconstruction

This talk reviews recent progress in Higgsless models of electroweak symmetry breaking, and summarizes relevant points of model-building and phenomenology.Comment: 12 pages, 2 figures, Presented at the X Mexican Workshop on Particles and Field

Z Boson Propagator Correction in Technicolor Theories with ETC Effects Included

We calculate the Z boson propagator correction, as described by the S parameter, in technicolor theories with extended technicolor interactions included. Our method is to solve the Bethe-Salpeter equation for the requisite current-current correlation functions. Our results suggest that the inclusion of extended technicolor interactions has a relatively small effect on S.Comment: 15pages, 8 figure

Spectral-Function Sum Rules in Supersymmetry Breaking Models

The technique of Weinberg's spectral-function sum rule is a powerful tool for a study of models in which global symmetry is dynamically broken. It enables us to convert information on the short-distance behavior of a theory to relations among physical quantities which appear in the low-energy picture of the theory. We apply such technique to general supersymmetry breaking models to derive new sum rules.Comment: 18 pages, 1 figur

General Sum Rules for WW Scattering in Higgsless Models: Equivalence Theorem and Deconstruction Identities

We analyze inelastic 2 to 2 scattering amplitudes for gauge bosons and Nambu-Goldstone bosons in deconstructed Higgsless models. Using the (KK) Equivalence Theorem in 4D (5D), we derive a set of general sum rules among the boson masses and multi-boson couplings that are valid for arbitrary deconstructed models. Taking the continuum limit, our results naturally include the 5D Higgsless model sum rules for arbitrary 5D geometry and boundary conditions; they also reduce to the elastic sum rules when applied to the special case of elastic scattering. For the case of linear deconstructed Higgsless models, we demonstrate that the sum rules can also be derived from a set of general deconstruction identities and completeness relations. We apply these sum rules to the deconstructed 3-site Higgsless model and its extensions; we show that in 5D ignoring all higher KK modes (n>1) is inconsistent once the inelastic channels become important. Finally, we discuss how our results generalize beyond the case of linear Higgsless models.Comment: 36 pages, 2 figure

Deconstruction and Elastic pi pi Scattering in Higgsless Models

We study elastic pion-pion scattering in global linear moose models and apply the results to a variety of Higgsless models in flat and AdS space using the Equivalence Theorem. In order to connect the global moose to Higgsless models, we first introduce a block-spin transformation which corresponds, in the continuum, to the freedom to perform coordinate transformations in the Higgsless model. We show that it is possible to make an "f-flat" deconstruction in which all of the f-constants f_j of the linear moose model are identical; the phenomenologically relevant f-flat models are those in which the coupling constants of the groups at either end of the moose are small - corresponding to the global linear moose. In studying pion-pion scattering, we derive various sum rules, including one analogous to the KSRF relation, and use them in evaluating the low-energy and high-energy forms of the leading elastic partial wave scattering amplitudes. We obtain elastic unitarity bounds as a function of the mass of the lightest KK mode and discuss their physical significance.Comment: 33 pages, JHEP3. Minor typos correcte

Reduction techniques of the back gate effect in the SOI Pixel Detector

We have fabricated monolithic pixel sensors in 0.2 μm Silicon-On-Insulator (SOI) CMOS technology, consisting of a thick sensor layer and a thin circuit layer with an insulating buried-oxide, which has many advantages. However, it has been found that the applied electric field in the sensor layer also affects the transistor operation in the adjacent circuit layer. This limits the applicable sensor bias well below the full depletion voltage. To overcome this, we performed a TCAD simulation and added an additional p-well (buried pwell) in the SOI process. Designs and preliminary results are presented