Saturation of optical absorption in CdS single crystals

The absorption saturation of CdS single crystals was investigated in the Urbach region. It was shown that the threshold behaviour of the absorption coefficient is caused by recharging of the shallow acceptors, and the absorption edge has exponential character both at low and high pumping intensities. The calculation method of nonlinear transmission dependencies was proposed. Using the known formulae one can minimize the value of root mean square deviation of the measured data from the calculated ones in the whole region of the light intensities

Electron transport in quantum dot chains: Dimensionality effects and hopping conductance

Detailed experimental and theoretical studies of lateral electron transport in a system of quantum dot chains demonstrate the complicated character of the conductance within the chain structure due to the interaction of conduction channels with different dimensionalities. The one-dimensional character of states in the wetting layer results in an anisotropic mobility, while the presence of the zero-dimensional states of the quantum dots leads to enhanced hopping conductance, which affects the low-temperature mobility and demonstrates an anisotropy in the conductance. These phenomena were probed by considering a one-dimensional model of hopping along with band filling effects. Differences between the model and the experimental results indicate that this system does not obey the simple one-dimensional Mott\u27s law of hopping and deserves further experimental and theoretical considerations

Structural, morphological, and magnetic characterization of In1-xMnxAs quantum dots grown by molecular beam epitaxy

In this paper, we present a method to order low temperature (LT) self-assembled ferromagnetic In1-xMnxAs quantum dots (QDs) grown by molecular beam epitaxy (MBE). The ordered In1-xMnxAs QDs were grown on top of a non-magnetic In0.4Ga0.6As/GaAs(100) QDs multi-layered structure. The modulation of the chemical potential, due to the stacking, provides a nucleation center for the LT In1-xMnxAs QDs. For particular conditions, such as surface morphology and growth conditions, the In1-xMnxAs QDs align along lines like chains. This work also reports the characterization of QDs grown on plain GaAs(100) substrates, as well as of the ordered structures, as function of Mn content and growth temperature. The substitutional Mn incorporation in the InAs lattice and the conditions for obtaining coherent and incoherent structures are discussed from comparison between Raman spectroscopy and x-ray analysis. Ferromagnetic behavior was observed for all structures at 2K. We found that the magnetic moment axis changes from [110] in In1-xMnxAs over GaAs to [1-10] for the ordered In1-xMnxAs grown over GaAs template. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745904]ABTLusABTLusFAPESPFAPESPCNPq under CEPOF/INOFCNPq under CEPOF/INO