Hematopoietic Action of Iron, Copper and Cobalt by Rabbit Bone Marrow Tissue Culture in Fluid Medium Part 2 Hematopoietic Actions of Cobalt and Copper

1. Hematopoietic actions of cobalt and copper, either singly or in combination with iron have been studied by means of rabbit bone marrow culture in fluid medium. 2. When various cobalt compounds are added singly, with exception of cobalt chloride, every one of them acts markedly to help erythropoiesis, but Hb content on the contrary often decreases by such addition. Consequently, this hypochrome erythropoiesis seems to be due to lack of iron supply. 3. In the case where ferric gluconate is added in combination with cobalt compounds, Hb increses markedly, especially so when the combination is ferric gluconate and cobalt chloride in proportion of 1:50; suggesting that cobalt greatly assists the induction of iron into the heme nucleus. 4. Due to its toxicity, copper addition either singly or in combination with iron does not help erythropoiesis to any great extent, but when in combination with iron as in the case of cobalt copper helps to increase Hb content. 5. The addition of three metals, iron, copper, and cobalt, does not yield the best result, indicating the necessity of giving a consideration to the toxicity arising out of the amount to added

Ukrainian Soviet Family: Formative stages

The purpose of the article: is to determine the peculiarities of the formation of family policy of the Soviet government and the co-existence of private and public in the household of Ukrainian families during the existence of the Soviet system. Research methods: comparative method, method of analogy, analysis and synthesis method, method induction and deduction were used in the course of the research. The results of the research. A comparative analysis of the peculiarities of the existence of Soviet families at different stages of the Soviet period was conducted. The parallels were drawn between the traditional Ukrainian family in the pre-revolutionary period and family innovations in the Soviet period. Practical implication. A generalized description of the position of the Ukrainians as a common element of the Soviet people under the Soviet system is provided. Value/Originality. The role of statistics alongside memories for a better reflection of the daily life of the Ukrainian Soviet family under the conditions of double standards of Soviet society is shown for the first time

A single Gly114Arg mutation stabilizes the hexameric subunit assembly and changes the substrate specificity of halo-archaeal nucleoside diphosphate kinase

AbstractNucleoside diphosphate kinase from extremely halophilic archaeon (HsNDK) requires above 2M NaCl concentration for in vitro refolding. Here an attempt was made to isolate mutations that allow HsNDK to refold in low salt media. Such a screening resulted in isolation of an HsNDK mutant, Gly114Arg, which efficiently refolded in the presence of 1M NaCl. This mutant, unlike the wild type enzyme, was expressed in Escherichia coli as an active form. The residue 114 is in close proximity to Glu155 of the neighboring subunit in the three dimensional hexameric structure of the HsNDK. It is thus possible that the attractive electrostatic interactions occur between Arg114 and Glu155 in the mutant HsNDK, stabilizing the hexameric subunit assembly

アモルファスSi中のErの発光に対するダングリングボンドの役割

Siダングリングボンドの果たすEr発光に対する役割を調べるために、Siダングリングボンドのある場所と発光に関わるErのある場所を空間的に分離することを考え、Erを光学ギャップの大きい薄膜材料に添加して、その上にダングリングボンド密度を制御してアモルファスSiを作製した。光学ギャップの大きな材料としてLiNbO_3結晶薄膜とアモルファスAl_2O_3薄膜を用いたが、界面が1層だけの場合は、Erの発光に対するa-Si:H堆積の発光強度の増大は観測されなかった。観測の感度を上げるために、Erを添加したアモルファスAl_2O_33薄膜のあいだに約20nmの厚さのa-Si:H層を挟んだAl_2O_3:Er/a-Si:H/Al_2O_3:Er/a-Si:H/Al_2O_3:Erの多層構造を作製し、300度Cでアニールした所、Erの発光が観測された。a-Si:Hを挟まないAl_2O_3:Erの3屑構造だけでは同じアニール条件でErの発光は観測されないことから、a-Si:Hが空間的には離れたErの励起に何らかの影響を及ぼすことを示している。しかし、これがSiダングリングボンドを介した励起エネルギー移行によるものかどうかは分からない。Er添加Al_2O_3とa-Si:Hの厚さを変えて詳細な発光特性を調べる必要がある。Erのまわりの結晶場の影響を配位子場理論に基づいて考察し、低温(19K)での実験で得られたスペクトルと比較することにより、Erの入り方を明らかにしてきた。素性のはっきりしないパラメータを用いるのではなく、波動関数に基づいてシュタルク準位を計算して、Erを囲む酸素の作る正8面体が歪んだ構造がErの発光スペクトルと矛盾しない結果を与えることを示した。また、発光スペクトルが低エネルギー側ほど広い幅を示すのは、アモルファス物質固有の構造乱れがその主な原因であることを示した。In order to see a role of Si dangling bonds in the photoluminescence(PL) mechanism of Er which is doped in a-Si : H, it is thought to be useful that the Er site is separated from the Si dangling bond site and the influence of changing the separation on the Er PL is observed. To realize the idea, Er ions are added in two kinds of wide gap materials to inhibit the optical absorption of the host materials. Crystalline LiNbO_3 or amorphous Al_2O_3 are tried as wide gap materials. On top of the Er-doped thin film of the wide gar material, a-Si : H was deposited. The Er PL was not enhanced, however, when there was only one interface between a-Si : H and the wide gap material. In order to have a better sensitivity, we prepared a multilayer structure of the formAl_2O_3 : Er/a-Si : H/Al_2O_3 : Er/a-Si : H/Al_2O_3 : Er with around 20 nm thick a-Si : H layers sandwiched between Er-doped Al_2O_3.After annealing at 300 C, the Er PL was observed, while the threefold-stacked layer without a-Si : H la yer did not exhibit the Er PL after the same procedure. The observed results indicate that the thin a-Si : H layer is useful to excite Er ions which locate apart from a-Si : H. We cannot conclude at present whether Si dangling bonds in a-Si : H really play a role in enhancing the Er PL or not. Further investigations by changing the thicknesses of a-Si : H and Er-doped Al_2O_3 are needed to clarify the mechanism.We also studied on the environment of an Er ion by calculating the Stark levels due to the ligand field and by comparing the results with the PL spectra observed at 19 K. A model fo the Er environment is one that an Er ion is surrounded six oxygens which are incorporated unintentionally into a-Si : H during preparation. It should be emphasized that we did not rely on fitting parameters whose physical meaning were not clear but started with the wavefunction of the Er ion. Thus the effect of changing the distance between the Er and 0 atoms on the Stark splitting can be deduced. We conlude that the environmental model is consistent with the observed Er PL spectra. The fluctuation of the structure due to the randomness of the amorphous network is most probably the origin of the linewidth of the Er PL spectra.研究課題/領域番号:16560005, 研究期間(年度):2004-2006出典：「アモルファスSi中のErの発光に対するダングリングボンドの役割」研究成果報告書　課題番号16560005 (KAKEN：科学研究費助成事業データベース（国立情報学研究所）)　　　本文データは著者版報告書より作

Genotyping and characterisation of the secretory lipolytic enzymes of Malassezia pachydermatis isolates collected from dogs

Introduction: Malassezia species are commensals of normal skin microbial flora of humans and animals. These may become pathogenic under certain conditions such as those associated with atopic dermatitis or otitis externa in dogs. Material and methods: Isolates of Malassezia pachydermatis were obtained from 27 dogs with healthy external ears and 32 dogs with otitis externa. Isolates were characterised on the basis of their first internal transcribed spacer (ITS) and internal spacer 1 (IGS1) sequences. Their extracellular lipase and phospholipase activity were also analysed. Three types of phospholipase inhibitor were used to identify the subclasses of phospholipase associated with otitis externa. Results: The clinical isolates were classified into three ITS and three IGS1 sequence types. No significant differences in pathogenicity were detected among the ITS or IGS1 genotypes, and all of the isolates exhibited similar levels of lipase activity. The isolates derived from the dogs with otitis externa showed significantly higher phospholipase activity than those obtained from the dogs with healthy external ears. A phospholipase D inhibitor reduced the phospholipase activity of the isolates obtained from the dogs with otitis externa. Conclusions: This study did not show any significant differences in pathogenicity among the ITS or IGS1 genotypes but does suggest that phospholipase D might be one of the virulence factors involved in the inflammation of the external ear caused by M. pachydermatis

Fluorine-incorporation scheme in fluorinated amorphous silicon prepared by various methods.

Fluorinated amorphous silicon (a-Si:F) films are prepared by three different methods: glow-discharge decomposition of SiF2 gas, magnetron sputtering, and conventional diode sputtering. The incorporation scheme of F atoms is investigated by means of nuclear magnetic resonance (NMR) and infrared (ir) absorption measurements. 19F NMR signals observed at 4.2 K can be simulated by superposing signals from dispersed F atoms, clustered F atoms, SiF4 molecules, and SiF3 species. The content of SiF4 increases by annealing in agreement with an increase in the intensity of ir absorption at 1020 cm-1. 19F NMR signals at 77 K and at room temperature show the effect of motional narrowing because SiF4 molecules move easily in the amorphous network

アモルファスシリコンの光劣化に対するフローティングボンドの寄与

欠陥生成とランダムネスの関係を、共有結合半径の大きく異なるGeとCの原子からなる_Ge_C_x:H薄膜と共有結合半径の近いGeとSiの原子からなる_Ge_Si_x:H薄膜における欠陥生成の様子を比較することにより調べた。C添加の場合、共有結合半径の違いによるランダムネスの増加が大きいために、Ge原子1個当たりのGeダングリングボンド(DB)はxの増加と共に増加することを示した。さらに水素化アモルファスシリコンにおいて、Siダングリングボンド(DB)に対するスピン格子緩和時間T_1の光劣化に伴う変化を調べ、T_1はランダムネスに関係したアーバックエネルギーと良い相関があることを示した。光誘起ESR信号の幅の広い信号(BC)と幅の狭い信号(NC)に対するT_1は、DBに対するT_1とは異なり、光劣化と共に減少することを見出した。この知見はBCがフローティングボンド(FB)に起因するものかどうかを考える上でひとつの手がかりになるものと思われる。次にFBが介在したDBの生成モデルに基づいて、光照射や電子線照射による欠陥生成過程を総合的に説明することを試みた。FBとDBのペア生成とペア消滅、FBとDBの相互変換、およびFB間のペア消滅を考慮したレート方程式を用いて、先ず電子線照射の実験をシミュレートした。さらに照射エネルギーの相違を考慮して、FB-BDペア生成項を変えることによって、光劣化過程も統一的に説明できることを示した。熱平衡欠陥の生成過程およびアニール過程も同じレート方程式によって説明できる可能性が大きく、シミュレーションを続行中である。Relation between the randomeness of amorphous network and the creation of defects was first investigated in an amorphous system of a-Ge_ C_x : H films which contains constituent atoms with largely different covalent radii, and compared the results with those in a-Ge_Si_x, : H films which contains constituent atoms with close covalent radii. It. was found that the addition of C atoms makes the films stricture more random and increase the Ge dangling bonds per Ge atoms.Next we measured the spin-lattice relaxation time T_1 of Si dangling bonds and its dependence on the light-soaking time in a-Si : H.It was found that T_1 has a fairly good correlation with the randomness of the amorphous network estimated from the Urbach energy. It was also found that T_1\u27s for the broad and narrow component signals of the light-induced ESR decreases by light-soaking, in contrast to that for the dark component. This might be an important clue to judge whether the origin of the broad component of the light-induced ESR comes from the floating bonds.Finally we tried to explain the defect creation processes by the light-soaking and electron-beam irradiation, using rate equations based on a model in which the floating bonds contribute to create dangling bonds.研究課題/領域番号:09650010, 研究期間(年度):1997-1998出典：「アモルファスシリコンの光劣化に対するフローティングボンドの寄与」研究成果報告書　課題番号09650010 (KAKEN：科学研究費助成事業データベース（国立情報学研究所）)　　　本文データは著者版報告書より作

Investigation of the spatial distribution of dangling bonds in light-soaked hydrogenated amorphous silicon

金沢大学大学院自然科学研究科電子物性デバイス金沢大学工学部We report on a detailed investigation of the spatial distribution of dangling bonds (DB\u27s) in light-soaked hydrogenated amorphous silicon (a-Si:H) films. The results for light soaking at different light intensities (3 W/cm2 and 300 mW/cm2) show that the inverse power-law DB distribution, Nυ(x)=Cυx-α, holds regardless of the light soaking intensity. Here, Nυ(x) is the volume density of DB\u27s at depth x measured from the surface, and Cυ and α(≈0.6) are constants. The nonuniform spatial distribution of DB\u27s in light-soaked a-Si:H is thought to originate from a nonuniform distribution of photocarriers during light soaking rather than from an inhomogeneity of the material. The same annealing behavior of light-induced DB\u27s was observed regardless of the thickness of the sample and regardless of whether the sample was light soaked from one side or from both sides. This result, together with the observation of identical spin characteristics, indicates that the light-induced DB\u27s at various depths of a given a-Si:H sample are identical in nature. The surface DB density is found to be much less sensitive to light soaking than the bulk DB density and can be assumed unchanged if the light-soaking intensity is not much higher than 300 mW/cm2 and the light-soaking time is shorter than ∼10 h. We show that the conventional method of estimating the surface DB density is no longer appropriate for light-soaked a-Si:H, due to the highly nonuniform distribution of DB\u27s in the material. The nonuniform distribution of DB\u27s can lead to significant disagreements between different techniques in quantifying the Staebler-Wronski effect and should therefore be taken into account in studies of the SW effect