10 research outputs found
GROWTH OF InAsxSb1-x LAYERS ON GaAs SUBSTRATES BY HOT WALL EPITAXY
Get PDFWe have studied the structural and electrical characteristics of InAsSb
ternary layers grown on GaAs (001) substrates by hot wall epitaxy (HWE) at
arsenic (As) reservoir temperature in the range from 220 to 290 °C. The
growth rate of the epilayer is found to be decreased with increasing As
temperature. This is attributed to the abundance of group V molecules to the
growth surface, which suppresses the mass transport of Indium (In) atoms. A
dramatic change in the surface morphologies of the samples has been observed
by scanning electron microscopy. X-ray diffraction studies indicate that the
arsenic composition of the layer can be controlled by manipulating As
temperature. Hall effect results of the samples show that the electron
mobility of the layer decreases with increasing As temperature
GRAVITATIONAL EFFECT ON GROWTH OF InX Ga1-XSb TERNARY BULK CRYSTALS
Get PDFThe effect of gravity on dissolution of GaSb in InSb melt and growth of
InGaSb was experimentally investigated using GaSb(seed)/InSb/GaSb(feed)
sandwich samples. Two parameters were considered: (1) the inclination angle
of the sample for gravity as 0°, 53° and 90°, (2) the sample diameter (D) as 9 mm and 5mm. When θ
=0°, the interface was almost flat whereas the interfaces were strongly
distorted when θ = 53° and 90°. The undissolved GaSb(feed)
remained for \theta = 0 °. However, it dissolved completely for
θ
=
90°, and partially for θ = 53°. As the gravitational angle
was increased, the growth length of uniform composition became long. The
decrease of sample diameter reduced the dissolution area of GaSb. These
facts indicated that the dissolution and growth processes were strongly
influenced by gravity
INFLUENCE OF THE IMPURITY ON MORPHOLOGY OF GaSb EPILAYER GROWN ON GaSb(001) PATTERNED SUBSTRATE BY LIQUID PHASE EPITAXY
Get PDFTellurium (Te) impurity was revealed to have a significant effect on
morphology of GaSb epilayer grown on GaSb (001) circular patterned
substrates by liquid phase epitaxy. This was clarified by comparing GaSb
epilayers with or without Te doping under identical growth conditions. After
addition of Te, it was found that (311)B facet appeared instead of (111)B
while (111)A was kept. The cross-sectional (110) plane of Te doped GaSb
epilayer after stain etching in a permanganate etchant revealed that two
boundaries separating differently doped upper and lateral parts of epilayer
existed, moreover, some Te impurity striations were found in the lateral part of
epilayer while no one was found in upper part. The time-development of
growth morphology of Te doped GaSb epilayer was studied. It was found that
(311)B facet appeared initially and formed dominantly after 3 hours´ growth
and the epilayer in initial state was concave
Defect Filtration of Hollow Pyramidal Structured GaSb Epilayers Grown on GaSb (100) Patterned Substrates by Liquid Phase Epitaxy
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