'Periodica Polytechnica Budapest University of Technology and Economics'
Abstract
Tellurium (Te) impurity was revealed to have a significant effect on
morphology of GaSb epilayer grown on GaSb (001) circular patterned
substrates by liquid phase epitaxy. This was clarified by comparing GaSb
epilayers with or without Te doping under identical growth conditions. After
addition of Te, it was found that (311)B facet appeared instead of (111)B
while (111)A was kept. The cross-sectional (110) plane of Te doped GaSb
epilayer after stain etching in a permanganate etchant revealed that two
boundaries separating differently doped upper and lateral parts of epilayer
existed, moreover, some Te impurity striations were found in the lateral part of
epilayer while no one was found in upper part. The time-development of
growth morphology of Te doped GaSb epilayer was studied. It was found that
(311)B facet appeared initially and formed dominantly after 3 hours´ growth
and the epilayer in initial state was concave