26 research outputs found
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
The magnetic moment and magnetization in GaAs/GaInAs/GaAs
heterostructures with Mn deluted in GaAs cover layers and with atomically
controlled Mn -layer thicknesses near GaInAs-quantum well (3 nm)
in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been
investigated. The mass magnetization all of the samples of
GaAs/GaInAs/GaAs with Mn increases with the increasing of the
magnetic field that pointed out on the presence of low-dimensional
ferromagnetism in the manganese depletion layer of GaAs based structures. It
has been estimated the manganese content threshold at which the ferromagnetic
ordering was found.Comment: 8 pages, 3 figure
Direct SIMS Determination of the InxGa1-xN Mole Fraction
We demonstrate that our secondary mass ion spectroscopy (SIMS) method for the determination of the mole fraction in solid InxGa1-xN solutions is accurate and reproduceable without need of reference samples. The method is based on measuring relative current values of CsM+ (M=Ga, In) secondary ions. The claim of reliable SIMS determination without reference samples was confirmed by four independent analytical methods on the same samples with a relative error in the InN mole fraction determination below 15
Antitumor activity of the novel pyridine derivative
The study aim was to explore a toxicological property and antitumor action of the novel pyridine derivative LHT-17-19 in cell culture and on experimental models of lung cancer in mic
Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese
The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found
Науково-практичний коментар Закону України «Про запобігання корупції» [станом на 1 лип. 2018 р.]
Науково-практичний коментар Закону України «Про запобігання корупції»: станом на 1 лип. 2018 р. / [А. В. Андрєєв, І. Л. Антипова, С. В. Банах та ін.], за заг. ред. Журавльова Д. В. – Київ: Видав. дім «Професіонал», 2018. – 512 с.Коментар розрахований на осіб, уповноважених на виконання функцій
держави або місцевого самоврядування та прирівняних до них осіб, які є
суб’єктами, на яких поширюється дія Закону України «Про запобігання корупції», на уповноважених осіб, відповідальних за реалізацію антикорупційних
програм, суддів, прокурорів, слідчих, детективів, адвокатів, а також на студентів вищих учбових закладів, які готують фахівців в галузі права