Modification of emission properties of ZnO layers due to plasmonic near-field coupling to Ag nanoislands

A simple fabrication method of Ag nanoislands on ZnO films is presented. Continuous wave and time-resolved photoluminescence and transmission are employed to investigate modifications of visible and UV emissions of ZnO brought about by coupling to localized surface plasmons residing on Ag nanoislands. The size of the nanoislands, determining their absorption and scattering efficiencies, is found to be an important factor governing plasmonic modification of optical response of ZnO films. The presence of the Ag nanoislands of appropriate dimensions causes a strong (threefold) increase in emission intensity and up to 1.5 times faster recombination. The experimental results are successfully described by model calculations within the Mie theory.Comment: 14 pages, 5 figure

Enhanced Performance of Camphorsulfonic Acid-Doped Perovskite Solar Cells

High-quality perovskite film with large grains and therefore reduced grain boundaries plays a significant role in improving the power conversion efficiency (PCE) and ensuring good long-term stability of the perovskite solar cells. In this work, we found that adding camphorsulfonic acid (CSA), a Lewis base, to the perovskite solution results in the crystallization of larger perovskite grains. By varying the concentration of CSA, we found that the optimal concentration of the additive is 1 mg/mL, which leads to an 20% increase in PCE of the cells compared to the reference CSA-free cell. Interestingly, we observed that the PCE of cells with an excess of CSA was initially poor, but may increase significantly over time, possibly due to CSA migration to the hole-transporting layer, leading to an improvement in its conductivity

GaN Nanowire Array for Charge Transfer in Hybrid GaN/P3HT:PC71BM Photovoltaic Heterostructure Fabricated on Silicon

We demonstrate that a GaN nanowire array can be used for efficient charge transfer between the organic photovoltaic layer and silicon in a Si/GaN/P3HT:PC71BM inverted hybrid heterostructure. The band alignment of such a material combination is favorable to facilitate exciton dissociation, carrier separation and electron transport into Si. The ordered nature of the GaN array helps to mitigate the intrinsic performance limitations of the organic active layer. The dependence of photovoltaic performance enhancement on the morphology of the nanostructure with nanowire diameters 30, 50, 60, 100 and 150 nm was studied in detail. The short circuit current was enhanced by a factor of 4.25, while an open circuit voltage increase by 0.32 volts was achieved compared to similar planar layers

Optical Properties and Light-Induced Charge Transfer in Selected Aromatic C60 Fullerene Derivatives and in Their Bulk Heterojunctions with Poly(3-Hexylthiophene)

Fullerene derivatives offer great scope for modification of the basic molecule, often called a buckyball. In recent years, they have been the subject of numerous studies, in particular in terms of their applications, including in solar cells. Here, the properties of four recently synthesized fullerene C60 derivatives were examined regarding their optical properties and the efficiency of the charge transfer process, both in fullerene derivatives themselves and in their heterojunctions with poly (3-hexylthiophene). Optical absorption, electron spin resonance (ESR), and time-resolved photoluminescence (TRPL) techniques were applied to study the synthesized molecules. It was shown that the absorption processes in fullerene derivatives are dominated by absorption of the fullerene cage and do not significantly depend on the type of the derivative. It was also found by ESR and TRPL studies that asymmetrical, dipole-like derivatives exhibit stronger light-induced charge transfer properties than their symmetrical counterparts. The observed inhomogeneous broadening of the ESR lines indicated a large disorder of all polymer–fullerene derivative blends. The density functional theory was applied to explain the results of the optical absorption experiments

Copolymers Containing 1-Methyl-2-phenyl-imidazole Moieties as Permanent Dipole Generating Units: Synthesis, Spectroscopic, Electrochemical, and Photovoltaic Properties

New donor–acceptor conjugated alternating or random copolymers containing 1-methyl-2-phenylbenzimidazole and benzothiadiazole (P1), diketopyrrolopyrrole (P4), or both acceptors (P2) are reported. The specific feature of these copolymers is the presence of a permanent dipole-bearing moiety (1-methyl-2-phenyl imidazole (MPI)) fused with the 1,4-phenylene ring of the polymer main chain. For comparative reasons, polymers of the same main chain but deprived of the MPI group were prepared, namely, P5 with diketopyrrolopyrrole and P3 with both acceptors. The presence of the permanent dipole results in an increase of the optical band gap from 1.51 eV in P3 to 1.57 eV in P2 and from 1.49 eV in P5 to 1.55 eV in P4. It also has a measurable effect on the ionization potential (IP) and electrochemical band gap (EgCV), leading to their decrease from 5.00 and 1.83 eV in P3 to 4.92 and 1.79 eV in P2 as well as from 5.09 and 1.87 eV in P5 to 4.94 and 1.81 eV in P4. Moreover, the presence of permanent dipole lowers the exciton binding energy (Eb) from 0.32 eV in P3 to 0.22 eV in P2 and from 0.38 eV in P5 to 0.26 eV in P4. These dipole-induced changes in the polymer properties should be beneficial for photovoltaic applications. Bulk heterojunction solar cells fabricated from these polymers (with PC71BM acceptor) show low series resistance (rs), indicating good electrical transport properties. The measured power conversion efficiency (PCE) of 0.54% is limited by the unfavorable morphology of the active layer

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nanowire LEDs grown in one process, which exhibit top facets of different shapes and, as we proved, have opposite growth polarities. We show that switching the polarity of nanowires (NWs) from the N- to Ga-face has a significant impact on their optical and electrical properties. In particular, cathodoluminescence studies revealed quantum wells emissions at about 3.5 eV, which were much brighter in Ga-polar NWs than in N-polar NWs. Moreover, the electron beam-induced current mapping proved that the p–n junctions were not active in N-polar NWs. Our results clearly indicate that intentional polarity inversion between the n- and p-type parts of NWs is a potential path towards the development of efficient nanoLED NW structures

Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs

For the development and application of GaN-based nanowire structures, it is crucial to understand their fundamental properties. In this work, we provide the nano-scale correlation of the morphological, electrical, and optical properties of GaN/AlGaN nanowire light emitting diodes (LEDs), observed using a combination of spatially and spectrally resolved cathodoluminescence spectroscopy and imaging, electron beam-induced current microscopy, the nano-probe technique, and scanning electron microscopy. To complement the results, the photo- and electro-luminescence were also studied. The interpretation of the experimental data was supported by the results of numerical simulations of the electronic band structure. We characterized two types of nanowire LEDs grown in one process, which exhibit top facets of different shapes and, as we proved, have opposite growth polarities. We show that switching the polarity of nanowires (NWs) from the N- to Ga-face has a significant impact on their optical and electrical properties. In particular, cathodoluminescence studies revealed quantum wells emissions at about 3.5 eV, which were much brighter in Ga-polar NWs than in N-polar NWs. Moreover, the electron beam-induced current mapping proved that the p–n junctions were not active in N-polar NWs. Our results clearly indicate that intentional polarity inversion between the n- and p-type parts of NWs is a potential path towards the development of efficient nanoLED NW structures

In Situ XRD and TEM Studies of Sol-Gel-Based Synthesis of LiFePO₄

Parallel in situ TEM and XRD heating experiments of LiFePO₄ precursors obtained by sol-gel method were conducted to study changes and to understand structural and morphological evolution during synthesis annealing, which is one of the most critical stages in preparing rechargeable cathodes based on these materials. Raman spectroscopy and electrochemical testing were also performed and a basic optimization of the final step of the sol-gel process was demonstrated by comparing in situ heating data with the electrochemical performance of materials annealed at different temperatures. The results obtained from these in situ measurements, at different length scales, provided a detailed picture of the structural and morphological changes and provided a better understanding of the electrochemical behavior of the final LiFePO₄ material. The study showed a strong dependence between the electrochemical performance of LiFePO₄ synthesized by sol-gel method and annealing temperature. The best performance was obtained with a material annealed at 800 °C