Improving the efficiency of GaP LED's which emit green light

A study of techniques for preparing n-type material and junctions which yield the most consistent high diode efficiency values high lighted the role that Ga vacancies and/or associated defects play in reducing the green luminescent efficiency of n-type GaP. A useful method for obtaining good quality material was developed. It is shown that junction formation at high temperatures in a process where the n to p transition occurs without removing the substrate from the furnace yields devices superior to those obtained by diffusion or double epitaxy in the conventional manner previously used for GaP junction formation

Semiconductor diode laser material and devices with emission in visible region of the spectrum

Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A

Epitaxial solar cells fabrication

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer

Epitaxial solar-cell fabrication, phase 2

Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%

Room-temperature-operation visible-emission semiconductor diode lasers

There were two main approaches taken to develop shorter wavelength lasers. (1) Based on (AlGa)As and liquid-phase epitaxy, significant new results were obtained: Properties of these laser diodes (power output, spectra, and beam patterns), materials considerations, laser theory, and growth problems are discussed. The design of (AlGa)As layers is discussed from the vertical point of view, and various design curves are given. Horizontal structural requirements are also discussed. Experimental results from measurements done as a function of hydrostatic pressure are correlated with other results. (2) The first heterojunction laser structures using GaAs sub l-x P sub x and In sub y Ga sub l-y P at compositions, where the lattice constants are matched, were grown using vapor-phase growth technology and are described in detail, including experimental device results. Threshold current densities from 3,000 to 5,000 A per sq cm. and emission wavelengths from 6,520 A to 6,640 A were obtained at 77 K. The limiting factor in these devices is nonradiative recombination at the heterojunctions. Life tests on facet-coated (AlGa)As CW diodes are reported

Foreword

Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/145332/1/cpmifore.pd

Origin of Low-Frequency Negative Transconductance Dispersion in p-HEMT

Measurements of low-frequency transconductance dispersion at different temperatures and conductance deep level transient spectroscopic(CDLTS) studies of an AlGaAs/InGaAs pseudomorphic HEMT were carried out. The experimental results show the presence of defect states at the AlGaAs/InGaAs hetero-interface. A mobility degradation model was developed to explain the low frequency negative transconductance dispersion as well as the apparent hole-like peaks observed in the CDLTS spectra. This model incorporates a time dependent change in 2DEG mobility due to ionised impurity scattering by the remaining charge states at the adjoining AlGaAs/InGaAs hetero-interface

Identification of a brainstem locus that inhibits tumor necrosis factor

In the brain, compact clusters of neuron cell bodies, termed nuclei, are essential for maintaining parameters of host physiology within a narrow range optimal for health. Neurons residing in the brainstem dorsal motor nucleus (DMN) project in the vagus nerve to communicate with the lungs, liver, gastrointestinal tract, and other organs. Vagus nerve-mediated reflexes also control immune system responses to infection and injury by inhibiting the production of tumor necrosis factor (TNF) and other cytokines in the spleen, although the function of DMN neurons in regulating TNF release is not known. Here, optogenetics and functional mapping reveal cholinergic neurons in the DMN, which project to the celiacsuperior mesenteric ganglia, significantly increase splenic nerve activity and inhibit TNF production. Efferent vagus nerve fibers terminating in the celiac-superior mesenteric ganglia form varicose-like structures surrounding individual nerve cell bodies innervating the spleen. Selective optogenetic activation of DMN cholinergic neurons or electrical activation of the cervical vagus nerve evokes action potentials in the splenic nerve. Pharmacological blockade and surgical transection of the vagus nerve inhibit vagus nerve-evoked splenic nerve responses. These results indicate that cholinergic neurons residing in the brainstem DMN control TNF production, revealing a role for brainstem coordination of immunity

Prevalence and demographics of methicillin resistant Staphylococcus aureus in culturable skin and soft tissue infections in an urban emergency department

<p>Abstract</p> <p>Background</p> <p>The rising incidence of methicillin resistant <it>Staph. aureus </it>(MRSA) infections is a concern for emergency practitioners. While studies have examined MRSA in inpatients, few have focused on emergency department populations. We sought to describe predictors of MRSA skin infections in an emergency department population.</p> <p>Methods</p> <p>This was a prospective observational cohort study conducted over three months in 2005. A convenience sample of patients with culturable skin infections presenting to a busy, urban emergency department was enrolled. Demographic and risk factor information was collected by structured interview. The predictive value of each risk factor for MRSA, as identified by culture, was tested using univariable logistic regression, and a multivariable predictive model was developed.</p> <p>Results</p> <p>Patients were 43% black, 40% female and mean age was 39 years (SD 14 years). Of the 182 patients with cultures, prevalence of MRSA was 58% (95%CI 50% to 65%). Significant predictors of MRSA were youth, lower body mass index, sexual contact in the past month, presence of an abscess cavity, spontaneous infection, and incarceration. The multivariable model had a C-statistic of 0.73 (95%CI 0.67 to 0.79) with four significant variables: age, group living, abscess cavity, and sexual contact within one month.</p> <p>Conclusion</p> <p>In this population of emergency department patients, MRSA skin infection was related to youth, recent sexual contact, presence of abscess, low body mass index, spontaneity of infection, incarceration or contact with an inmate, and group home living.</p

Methicillin-Resistant Staphylococcus aureus (MRSA) Nasal Real-Time PCR: A Predictive Tool for Contamination of the Hospital Environment

OBJECTIVE We sought to determine whether the bacterial burden in the nares, as determined by the cycle threshold (CT) value from real-time MRSA PCR, is predictive of environmental contamination with MRSA. METHODS Patients identified as MRSA nasal carriers per hospital protocol were enrolled within 72 hours of room admission. Patients were excluded if (1) nasal mupirocin or chlorhexidine body wash was used within the past month or (2) an active MRSA infection was suspected. Four environmental sites, 6 body sites and a wound, if present, were cultured with premoistened swabs. All nasal swabs were submitted for both a quantitative culture and real-time PCR (Roche Lightcycler, Indianapolis, IN). RESULTS At study enrollment, 82 patients had a positive MRSA-PCR. A negative correlation of moderate strength was observed between the CT value and the number of MRSA colonies in the nares (r=−0.61; P<0.01). Current antibiotic use was associated with lower levels of MRSA nasal colonization (CT value, 30.2 vs 27.7; P<0.01). Patients with concomitant environmental contamination had a higher median log MRSA nares count (3.9 vs 2.5, P=0.01) and lower CT values (28.0 vs 30.2; P<0.01). However, a ROC curve was unable to identify a threshold MRSA nares count that reliably excluded environmental contamination. CONCLUSIONS Patients with a higher burden of MRSA in their nares, based on the CT value, were more likely to contaminate their environment with MRSA. However, contamination of the environment cannot be predicted solely by the degree of MRSA nasal colonization