Effect of Added Nitrogen on Properties of SiCN Films Prepared by PECVD Using Hexamethyldisilazane

Silicon carbonitride thin films were obtained by plasma-enhanced chemical vapor deposition using native precursor hexamethyldisilazane with a nitrogen addition. Films were investigated by X-ray diffraction spectroscopy, Fourier transform infrared spectroscopy and nanoindentation. It is established that all the films were X-ray amorphous. An increase in nitrogen flow rate leads to increasing the number of Si-N bonds, which, in turn, promotes the rise of nanohardness and elastic modulus up to 20 GPa and 160 GPa, respectively. The optimum deposition parameters were established. The films can be recommended as hard coatings for strengthening cutting tools. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3532

Effect of Substrate Temperature on the Properties of PECVD SiCN Films

An influence of substrate temperature on the properties of SiCN films deposited on silicon substrates by plasma enhanced chemical vapor deposition (PECVD) technique using hexamethyldisilazane is analyzed. The films were studied using XRD, FTIR, XPS, AFM, Knoop hardness test and nanoindentation. It was established that all films were X-ray amorphous and had low surface roughness. Hydrogen effusion takes place above 400 °C, which leads to corresponding changes in chemical bonding and mechanical properties of the films

Effect of Substrate Temperature on the Properties of PECVD SiCN Films

An influence of substrate temperature on the properties of SiCN films deposited on silicon substrates by plasma enhanced chemical vapor deposition (PECVD) technique using hexamethyldisilazane is analyzed. The films were studied using XRD, FTIR, XPS, AFM, Knoop hardness test and nanoindentation. It was established that all films were X-ray amorphous and had low surface roughness. Hydrogen effusion takes place above 400 °C, which leads to corresponding changes in chemical bonding and mechanical properties of the films

AlMgB14-Based Films Prepared by Magnetron Sputtering at Various Substrate Temperatures

The films were deposited by magnetron sputtering the AlMgB14 target at different substrate temperatures (TS) in the range of 100-500 C. The films were annealed at 1000 C in vacuum. The deposited films were characterized by XRD, AFM, FTIR spectroscopy, nano- and micro-indentation and scratch testing. The films exhibit hardness that is much lower than the one of the bulk AlMgB14 materials, which is due to the amorphous film structure in which the strong B-B bonds are absent and the weaker B-O bonds dominate

Hard Si-C-N Chemical Vapor Deposited Films

Si-C-N thin films were deposited on silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane as the main precursor. An influence of substrate temperature (TS) on film properties was analyzed. It was established that the deposited films were x-ray amorphous. The growth of the films slows down with increasing substrate temperature. The distribution of Si–C, Si–N and C–N bonds were almost independent of TS, whereas the number of С–Н, Si–H and N–H bonds essentially decreased when substrate temperature increased. The nanohardness and elastic modulus increased with TS due to a reduction of the weak hydrogen bonds

Comparative investigation of NbN and Nb–Si–N films: experiment and theory

NbN and Nb–Si–N films have been deposited by magnetron sputtering of the Nb and Si targets on silicon wafers at various powers supplied to the Nb target. The films have been investigated by an atomic force microscope, X-ray diffraction, X-ray photoelectron spectroscopy, nanoindentaion and microindentation. The NbN films were nanostructured, and the Nb–Si–N films represented an aggregation of δ-NbNx nanocrystallites embedded into the amorphous CSi₃N₄ matrix (nc-δ-NbNx/a-CSi₃N₄). The annealing of the films in vacuum showed that their intensive oxidation occurred at annealing temperature higher than 600 °C. To explain the experimental results on the Nb–Si–N films, first-principles molecular dynamics simulations of the NbN(001)/CSi₃N₄ heterostructures have been carried out.NbN і Nb–Si–N плівки осаджували на кремнієві пластини методом магнетронного розпилення мішеней Nb і Si при різних потужностях розряду на мішені із Nb. Плівки були досліджені за допомогою атомно-силового мікроскопа, дифракції рентгенівських променів, рентгенівської фотоелектронної спектроскопії, нано- і мікроіндентування. NbN плівки були наноструктуровані, тоді як Nb–Si–N плівки являли агрегацію δ-NbNx нанокристалітів, вкраплених в аморфну CSi₃N₄ матрицю (nc-δ-NbNx/ a-CSi₃N₄). Відпал плівок у вакуумі показав, що їх інтенсивне окислення відбувається при температурі вищій, ніж 600 °C. Для пояснення експериментальних результатів по Nb–Si–N плівках проведено моделювання NbN (001)/CSi₃N₄ гетероструктури із перших принципів в рамках молекулярної динаміки.NbN и Nb–Si–N пленки осаждали на кремниевые пластины методом магнетронного распыления мишеней Nb и Si при различных мощностях разряда на мишени с Nb. Пленки были исследованы с помощью атомно-силового микроскопа, дифракции рентгеновских лучей, рентгеновской фотоэлектронной спектроскопии, нано- и микроиндентирования. NbN пленки были наноструктурированные, тогда как Nb–Si–N пленки представляли агрегацию δ-NbNx нанокристаллитов, вкрапленных в аморфную CSi₃N₄ матрицу (nc-δ-NbNx/a-CSi₃N₄). Отжиг пленок в вакууме показал, что их интенсивное окисление происходит при температуре выше, чем 600 °C. Для объяснения экспериментальных результатов по Nb–Si–N пленках проведено моделирование NbN (001)/CSi₃N₄ гетероструктуры из первых принципов в рамках молекулярной динамики.This work was partially supported by STCU Contract No. 5539. The authors are grateful to Dr. Timofejeva, I. I. and Dr. Dub, S. N. for XRD investigations and nanoindentation of the films. The authors are grateful to the directorate of the Summery Institute at Jackson State University for financial support and the possibility to perform large-scale calculations

Structural and Mechanical Properties of Nanocomposite Nb-Al-N Films

Nb-Al-N films were deposited by magnetron sputtering of the Nb and Al targets in the Ar-N2 atmosphere on silicon wafers at various currents supplied to the magnetron device with the Al target (IAl=100, 150, 200, 300 mA). The films were studied with XRD, FTIR spectroscopy, as well by nanoindentation and Knoop indentation tests. The films were found to have the nanocomposite nc-B1-NbNx/a-AlN structure and exhibit the nanohardness and Knoop hardness in the ranges of 29-33.5 GPa and 46-48 GPa, respectively. The hardness and elastic modulus has an extreme dependence on IAl

AlMgB14-Based Films Prepared by Magnetron Sputtering at Various Substrate Temperatures

The films were deposited by magnetron sputtering the AlMgB14 target at different substrate temperatures (TS) in the range of 100-500 C. The films were annealed at 1000 C in vacuum. The deposited films were characterized by XRD, AFM, FTIR spectroscopy, nano- and micro-indentation and scratch testing. The films exhibit hardness that is much lower than the one of the bulk AlMgB14 materials, which is due to the amorphous film structure in which the strong B-B bonds are absent and the weaker B-O bonds dominate

Hard Si-C-N Chemical Vapor Deposited Films

Si-C-N thin films were deposited on silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane as the main precursor. An influence of substrate temperature (TS) on film properties was analyzed. It was established that the deposited films were x-ray amorphous. The growth of the films slows down with increasing substrate temperature. The distribution of Si–C, Si–N and C–N bonds were almost independent of TS, whereas the number of С–Н, Si–H and N–H bonds essentially decreased when substrate temperature increased. The nanohardness and elastic modulus increased with TS due to a reduction of the weak hydrogen bonds

Structural and Mechanical Properties of Nanocomposite Nb-Al-N Films

Nb-Al-N films were deposited by magnetron sputtering of the Nb and Al targets in the Ar-N2 atmosphere on silicon wafers at various currents supplied to the magnetron device with the Al target (IAl=100, 150, 200, 300 mA). The films were studied with XRD, FTIR spectroscopy, as well by nanoindentation and Knoop indentation tests. The films were found to have the nanocomposite nc-B1-NbNx/a-AlN structure and exhibit the nanohardness and Knoop hardness in the ranges of 29-33.5 GPa and 46-48 GPa, respectively. The hardness and elastic modulus has an extreme dependence on IAl