Growth and characterization of (ZnSe)0.1(SnSe)0.9 films for use in thin film solar cells

(ZnSe)x(SnSe)1-x films were fabricated from ZnSe and SnSe precursors using chemical-molecular beam deposition (CMBD) method at a substrate temperature of 500°C. The structural and morphological properties of (ZnSe)0.1(SnSe)0.9 films have been studied. The data from the scanning electron microscope showed that the grain sizes of the films were 5-6 μm and the films had a close-packed polycrystalline structure. The results of X-ray diffraction analysis of the samples revealed that the films have an orthorhombic structure. Structural parameters of the obtained films are given

GROWTH AND CHARACTERIZATION OF (ZnSe)0.1(SnSe)0.9 FILMS FOR USE IN THIN FILM SOLAR CELLS

(ZnSe)x(SnSe)1-x films were fabricated from ZnSe and SnSe precursors using chemical-molecular beam deposition (CMBD) method at a substrate temperature of 500°C. The structural and morphological properties of (ZnSe)0.1(SnSe)0.9 films have been studied. The data from the scanning electron microscope showed that the grain sizes of the films were 5-6 μm and the films had a close-packed polycrystalline structure. The results of X-ray diffraction analysis of the samples revealed that the films have an orthorhombic structure. Structural parameters of the obtained films are given

Conductivity of SbxSey films grown by CMBD from Sb and Se precursors for use in solar cells

Antimony selenide (Sb2Se3) has been developed as attractive, non-toxic and earth-abundant solar absorber candidate among the thin-film photovoltaic devices. The growth of SbxSey thin films, by atmospheric pressure chemical molecular beam deposition (CMBD) method, from separate Sb and Se precursors has been reported. The conductivity of the films was investigated as a function of the vapor phase mixture of Sb and Se. By the precise control of the Sb/Se ratio we succeeded in obtaining stoichiometric Sb2Se3 films. It is also found out that we can control the conductivity by deliberately introducing the deviation from the stoichiometry. The conductivity was varied in the wide range of 10−5 ÷ 102 (Ohm × cm)−1 and samples had p- and n-type conductivity depending on Sb/Se ratio. The obtained results were explained by the formation of intrinsic point defects

Comunidad Valenciana: La Economía de la Comunidad Valenciana, balance de la situación de 2000

Este artículo realiza un balance de situación de la economía de la Comunidad Valenciana en 2000. En el primer punto abordaremos la evolución del entorno económico internacional y nacional a lo largo de dicho ejercicio. En el segundo se analiza la evolución de la economía de la Comunidad Valenciana, tomando como referencia el total nacional y las diferentes Comunidades Autónomas, desde cuatro puntos de vista: en primer lugar, desde la óptica de la producción, a través de la Contabilidad Trimestral; en segundo lugar se muestra la dinámica del mercado de trabajo en 2000, en el tercero se expone la evolución de los precios y salarios, en el cuarto se completa el análisis mostrando la evolución más reciente de la economía valenciana a través de los diferentes indicadores de coyuntura disponibles. En el punto tercero se comentan los escenarios de comportamiento futuro de la economía de la Comunidad Valenciana, enmarcadas en el contexto internacional y nacional

Growth and characterization of ZnxSn1−xSe films for use in thin film solar cells

We have fabricated ZnxSn1−xSe (ZTSe) films for the first time. Samples were fabricated by chemical molecular beam deposition method at atmospheric pressure in hydrogen flow. ZnSe and SnSe powders with 99.999% purity were used as precursors. The temperature of precursors varied in the range of (850–950) °C. Films were deposited at substrate temperature of (500–600) °C. Borosilicate glass was used as a substrate. We have studied ZTSe films by EDS, XRD and SEM. The samples had orthorhombic and cubic structures depending on composition. Results of EDS have shown that stoichiometric composition of samples moved to ZnSe side by increasing with substrate temperature. SEM pictures have shown that samples had polycrystalline structure. The grain size varied in the range of (2–15) µm. The grain size of samples increased from (2–5) µm to (15–20) µm for substrate temperatures of 500 °C and 550 °C respectively. While, at a substrate temperature of 600 °C the grain size decreased up to (3–5) µm, possibly, because of increasing of ZnSe content. XRD analysis has shown that samples have ZnSe, SnSe, Se and Sn phases. The band gap of samples varied in the range of 1.0–2.0 eV depending on the film compositions. An inversion of the conductivity type was found: samples fabricated at 500 °C and 550 °C performed of p-type conductivity; while samples fabricated at 600 °C showed n-type conductivity

Characterisation of SnSe thin films fabricated by chemical molecular beam deposition for use in thin film solar cells

SnSe thin films were fabricated the first time by chemical molecular beam deposition (CMBD) in atmospheric pressure hydrogen flow using polycrystalline tin selenium (SnSe) precursors. The morphological and electrical properties of the films were studied as a function of the precursor's composition and the substrate temperature. Experimental data indicate that in the resulting thin films Se enrichment takes place at low substrate temperatures, despite the different compositions of the SnSe precursor during the synthesis. In this case, the grain sizes of the films vary in the range of (8-20) mu m, depending on the substrate temperature. In addition, X-ray diffraction analysis of the samples shows that the films have an orthorhombic crystalline structure. The electrical conductivity of films measured by van der Pauw method varies between 6 and 90 (Omega x cm)(-1). The optical measurements on selected SnSe thin films illustrate that the samples have an optical bandgap of (1.1-1.2) eV and the absorption coefficient of similar to 10(5) cm(-1), which is suitable for thin film solar cells

Effect of the Sb/Se Ratio on the Structural, Morphological and Electrical Properties of SbxSey Films

At the present, attention of many researchers is focused on Sb2Se3, Sb2S3 and Sb2(Sx, Se1-x)3 chalcogenide compounds. This is due to the physical properties of these materials, such as p-type conductivity, band gap Eg = 1.1÷1.8 eV, high absorption coefficient α ˃ 105cm-1 (for visible solar radiation), low melting point (823K and 885K for Sb2Se3 and for Sb2S3 respectively) and high partial pressure, which make these materials suitable for use as an absorbing layer in high efficiency thin film solar cells. In this work, we presented the effect of the Sb/Se ratio on the structural, morphological, and electrical properties of SbxSey films. SbxSey films were fabricated by chemical molecular beam deposition (CMBD) method from Sb and Se precursors at a substrate temperature of 500°C at atmospheric pressure hydrogen flow. The scanning electron microscope and X-ray diffraction analysis show that all films have a crystallite size of 2÷3 μm and an orthorhombic crystal structure. The electrical conductivity of the films varies in the range of ~10-5÷ 102 (Ohm • cm)-1 depending on Sb/Se ratio which was measured by van der Pauw method

Structural and optical properties of {SbxSey} thin films obtained by chemical molecular beam deposition method from Sb and Se precursors

SbxSey thin-films were obtained by chemical-molecular beam deposition (CMBD) on soda-lime glass from Sb and Se precursors. By the precise control of the Sb/Se ratio, Sb2Se3 thin films with stoichiometric composition were successfully obtained. The elemental and phase composition, as well as the crystal structure of SbxSey thin-films, were studied by energy-dispersive X-ray microanalysis, X-ray diffraction, Raman spectroscopy, scanning electron microscopy and atomic force microscopy. The optical bandgap of the films was determined from the absorption spectra acquired by a spectrophotometer. The physical properties of SbxSey thin films with different compositions were investigated

Structural and optical properties of SbxSey thin films obtained by chemical molecular beam deposition method from Sb and Se precursors

SbxSey thin-films were obtained by chemical-molecular beam deposition (CMBD) on soda-lime glass from Sb and Se precursors. By the precise control of the Sb/Se ratio, Sb2Se3 thin films with stoichiometric composition were successfully obtained. The elemental and phase composition, as well as the crystal structure of SbxSey thin-films, were studied by energy-dispersive X-ray microanalysis, X-ray diffraction, Raman spectroscopy, scanning electron microscopy and atomic force microscopy. The optical bandgap of the films was determined from the absorption spectra acquired by a spectrophotometer. The physical properties of SbxSey thin films with different compositions were investigated