Preparation and properties of amorphous MgB2_2/MgO superstructures: A new model disordered superconductor

In this paper we introduce a novel method for fabricating MgB$_2$/MgO multilayers and demonstrate the potential for using them as a new model for disordered superconductors. In this approach we control the annealing of the MgB$_2$ to yield an interesting new class of disordered (amorphous) superconductors with relatively high transition temperatures. The multilayers appear to exhibit quasi-two-dimensional superconductivity with controlled anisotropy. We discuss the properties of the multilayers as the thickness of the components of the bilayers vary.Comment: 7 pages, 8 figure

Attentional avoidance of high-fat food in unsuccessful dieters

Using the exogenous cueing task, this study examined whether restrained and disinhibited eaters differ in their orientation of attention towards and their difficulty to disengage from high versus low-fat food pictures in a relatively short (500 ms) and a long presentation format (1500 ms). Overall, participants in the 500 ms condition showed a tendency to direct attention away from high-fat food pictures compared to neutral pictures. No differential pattern was evident for the 1500 ms condition. Correlational analysis revealed that reduced engagement with high-fat food was particularly pronounced for disinhibited eaters. Although in the short term this seems an adaptive strategy, it may eventually become counterproductive, as it could hinder habituation and learning to cope with seductive characteristics of high-fat food. (C) 2010 Elsevier Ltd. All rights reserved

Spin properties of single electron states in coupled quantum dots

Spin properties of single electron states in laterally coupled quantum dots in the presence of a perpendicular magnetic field are studied by exact numerical diagonalization. Dresselhaus (linear and cubic) and Bychkov-Rashba spin-orbit couplings are included in a realistic model of confined dots based on GaAs. Group theoretical classification of quantum states with and without spin orbit coupling is provided. Spin-orbit effects on the g-factor are rather weak. It is shown that the frequency of coherent oscillations (tunneling amplitude) in coupled dots is largely unaffected by spin-orbit effects due to symmetry requirements. The leading contributions to the frequency involves the cubic term of the Dresselhaus coupling. Spin-orbit coupling in the presence of magnetic field leads to a spin-dependent tunneling amplitude, and thus to the possibility of spin to charge conversion, namely spatial separation of spin by coherent oscillations in a uniform magnetic field. It is also shown that spin hot spots exist in coupled GaAs dots already at moderate magnetic fields, and that spin hot spots at zero magnetic field are due to the cubic Dresselhaus term only.Comment: 16 pages, 12 figure

Determination of the spin-flip time in ferromagnetic SrRuO3 from time-resolved Kerr measurements

We report time-resolved Kerr effect measurements of magnetization dynamics in ferromagnetic SrRuO3. We observe that the demagnetization time slows substantially at temperatures within 15K of the Curie temperature, which is ~ 150K. We analyze the data with a phenomenological model that relates the demagnetization time to the spin flip time. In agreement with our observations the model yields a demagnetization time that is inversely proportional to T-Tc. We also make a direct comparison of the spin flip rate and the Gilbert damping coefficient showing that their ratio very close to kBTc, indicating a common origin for these phenomena

Heterovalent interlayers and interface states: an ab initio study of GaAs/Si/GaAs (110) and (100) heterostructures

We have investigated ab initio the existence of localized states and resonances in abrupt GaAs/Si/GaAs (110)- and (100)-oriented heterostructures incorporating 1 or 2 monolayers (MLs) of Si, as well as in the fully developed Si/GaAs (110) heterojunction. In (100)-oriented structures, we find both valence- and conduction-band related near-band edge states localized at the Si/GaAs interface. In the (110) systems, instead, interface states occur deeper in the valence band; the highest valence-related resonances being about 1 eV below the GaAs valence-band maximum. Using their characteristic bonding properties and atomic character, we are able to follow the evolution of the localized states and resonances from the fully developed Si/GaAs binary junction to the ternary GaAs/Si/GaAs (110) systems incorporating 2 or 1 ML of Si. This approach also allows us to show the link between the interface states of the (110) and (100) systems. Finally, the conditions for the existence of localized states at the Si/GaAs (110) interface are discussed based on a Koster-Slater model developed for the interface-state problem.Comment: REVTeX 4, 14 pages, 15 EPS figure

Critical thickness for itinerant ferromagnetism in ultrathin films of SrRuO3_3

Ultrathin films of the itinerant ferromagnet SrRuO$_3$ were studied using transport and magnto-optic polar Kerr effect. We find that below 4 monolayers the films become insulating and their magnetic character changes as they loose their simple ferromagnetic behavior. We observe a strong reduction in the magnetic moment which for 3 monolayers and below lies in the plane of the film. Exchange-bias behavior is observed below the critical thickness, and may point to induced antiferromagnetism in contact with ferromagnetic regions.Comment: 4 pages, 5 figure

Thickness dependence of the efficiency of polymer:fullerene bulk heterojunction solar cells

We study the thickness dependence of the performance of bulk heterojunction solar cells based on poly[2-methoxy-5-(3('),7(')-dimethyloctyloxy)-1,4-phenylenevinylene] as electron donor and [6,6]-phenyl C-61 butyric acid methyl ester as electron acceptor. Typically, these devices have an active layer thickness of 100 nm at which only 60% of the incoming light is absorbed. Increasing device thickness results in a lower overall power conversion efficiency, mainly due to a lowering of the fill factor. We demonstrate that the decrease in fill factor and hence device efficiency is due to a combination of charge recombination and space-charge effects

Nuclear Tetrahedral Symmetry: Possibly Present Throughout the Periodic Table

More than half a century after the fundamental, spherical shell structure in nuclei has been established, theoretical predictions indicate that the shell-gaps comparable or even stronger than those at spherical shapes may exist. Group-theoretical analysis supported by realistic mean-field calculations indicate that the corresponding nuclei are characterized by the $T_d^D$ ('double-tetrahedral') group of symmetry, exact or approximate. The corresponding strong shell-gap structure is markedly enhanced by the existence of the 4-dimensional irreducible representations of the group in question and consequently it can be seen as a geometrical effect that does not depend on a particular realization of the mean-field. Possibilities of discovering the corresponding symmetry in experiment are discussed.Comment: 4 pages in LaTeX and 4 figures in eps forma

Parallel electron-hole bilayer conductivity from electronic interface reconstruction

The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO$_3$ capping layer prevents structural and chemical reconstruction at the LaAlO$_3$ surface and triggers the electronic reconstruction at a significantly lower LaAlO$_3$ film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.Comment: Phys. Rev. Lett., in pres

Effective calculation of LEED intensities using symmetry-adapted functions

The calculation of LEED intensities in a spherical-wave representation can be substantially simplified by symmetry relations. The wave field around each atom is expanded in symmetry-adapted functions where the local point symmetry of the atomic site applies. For overlayer systems with more than one atom per unit cell symmetry-adapted functions can be used when the division of the crystal into monoatomic subplanes is replaced by division into subplanes containing all symmetrically equivalent atomic positions